Overview
The BCW68GLT1G is a general-purpose PNP silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require high reliability and compliance with stringent standards. It is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of the automotive industry. The device is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -45 | Vdc |
| Collector-Base Voltage | VCBO | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Continuous Collector Current | IC | -800 | mAdc |
| DC Current Gain (IC = -10 mA, VCE = -1.0 V) | hFE | 120 - 160 | - |
| Collector-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) | VCE(sat) | -0.7 | Vdc |
| Base-Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) | VBE(sat) | -2.0 | Vdc |
| Current-Gain Bandwidth Product (IC = -20 mA, VCE = -10 V, f = 100 MHz) | fT | 100 | MHz |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High collector-emitter voltage (VCEO) of -45 V and collector-base voltage (VCBO) of -60 V.
- Continuous collector current of up to -800 mA.
- High DC current gain (hFE) ranging from 120 to 160 at IC = -10 mA and VCE = -1.0 V.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current-gain bandwidth product (fT) of 100 MHz.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems, including power management and control circuits.
- General-purpose switching and amplification in consumer electronics.
- Industrial control systems and automation.
- Audio and video equipment.
- Power supplies and voltage regulators.
Q & A
- What is the maximum collector-emitter voltage of the BCW68GLT1G transistor?
The maximum collector-emitter voltage (VCEO) is -45 Vdc.
- Is the BCW68GLT1G transistor RoHS compliant?
Yes, the BCW68GLT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the continuous collector current rating of the BCW68GLT1G?
The continuous collector current (IC) is rated at -800 mA.
- What is the DC current gain (hFE) of the BCW68GLT1G transistor?
The DC current gain (hFE) ranges from 120 to 160 at IC = -10 mA and VCE = -1.0 V.
- What is the thermal resistance, junction-to-ambient (RJA) of the BCW68GLT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.
- What is the junction and storage temperature range for the BCW68GLT1G transistor?
The junction and storage temperature range is -55 to +150 °C.
- Is the BCW68GLT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What package type is the BCW68GLT1G transistor available in?
The BCW68GLT1G transistor is available in the SOT-23 package.
- What is the current-gain bandwidth product (fT) of the BCW68GLT1G transistor?
The current-gain bandwidth product (fT) is 100 MHz.
- Can the BCW68GLT1G transistor be used in high-frequency applications?
Yes, with a current-gain bandwidth product (fT) of 100 MHz, it is suitable for high-frequency applications.
