Overview
The BCW66GLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is optimized for high-reliability applications, low-voltage operations, and rugged design. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 800 | mAdc |
| Collector Current - Pulsed | IC | 1200 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 100 mA, VCE = 10 Vdc) | hFE | 50 - 110 | - |
| Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VCE(sat) | 0.7 | Vdc |
| Base-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) | VBE(sat) | 2.0 | Vdc |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other high-reliability applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High DC current gain (hFE) ranging from 50 to 110 at IC = 100 mA and VCE = 10 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V at IC = 500 mA and IB = 50 mA.
- Low base-emitter saturation voltage (VBE(sat)) of 2.0 V at IC = 500 mA and IB = 50 mA.
- Fast switching times with turn-on time (ton) of 100 ns and turn-off time (toff) of 400 ns.
- Small signal current-gain bandwidth product (fT) of 100 MHz at IC = 20 mA and VCE = 10 Vdc.
Applications
- Automotive systems requiring high reliability and ruggedness.
- General-purpose switching and amplification in low-voltage applications.
- Consumer electronics where high DC current gain and low saturation voltages are beneficial.
- Industrial control systems and automation.
- Audio and video equipment where low noise and high fidelity are required.
Q & A
- What is the collector-emitter voltage rating of the BCW66GLT1G transistor?
The collector-emitter voltage rating is 45 Vdc.
- Is the BCW66GLT1G transistor RoHS compliant?
Yes, the BCW66GLT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What is the maximum continuous collector current of the BCW66GLT1G?
The maximum continuous collector current is 800 mA.
- What is the typical DC current gain (hFE) of the BCW66GLT1G?
The typical DC current gain (hFE) ranges from 50 to 110 at IC = 100 mA and VCE = 10 Vdc.
- What are the turn-on and turn-off times of the BCW66GLT1G transistor?
The turn-on time (ton) is 100 ns and the turn-off time (toff) is 400 ns.
- What is the thermal resistance, junction-to-ambient, for the BCW66GLT1G on an FR-5 board?
The thermal resistance, junction-to-ambient, is 556 °C/W on an FR-5 board.
- What are the typical base-emitter and collector-emitter saturation voltages?
The typical base-emitter saturation voltage (VBE(sat)) is 2.0 V, and the collector-emitter saturation voltage (VCE(sat)) is 0.7 V at specified conditions.
- What is the package type of the BCW66GLT1G transistor?
The BCW66GLT1G is packaged in a SOT-23 (TO-236) case.
- Is the BCW66GLT1G suitable for high-reliability applications?
Yes, the BCW66GLT1G is AEC-Q101 qualified and PPAP capable, making it suitable for high-reliability applications.
- What is the junction and storage temperature range for the BCW66GLT1G?
The junction and storage temperature range is -55°C to +150°C.
