BC847CMTF
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onsemi BC847CMTF

Manufacturer No:
BC847CMTF
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847CMTF is a general-purpose NPN epitaxial silicon transistor manufactured by onsemi. It is part of the BC847 series, known for its versatility in both switching and amplifier applications. This transistor is packaged in a SOT-23-3 format, making it suitable for a wide range of electronic circuits, including those requiring automatic insertion in thick and thin-film circuits.

Key Specifications

Parameter Conditions Min. Typ. Max. Unit
Collector-Base Breakdown Voltage (VBRCBO) IC = 10 μA - - 50 V
Collector-Emitter Breakdown Voltage (VBRCEO) IC = 10 mA - - 45 V
Emitter-Base Breakdown Voltage (VBREBO) IE = 1.0 μA - - 6.0 V
Collector Cutoff Current (ICBO) VCB = 30 V, TA = 150°C - - 15 nA nA
DC Current Gain (hFE) VCE = 5 V, IC = 2 mA 420 - 800 -
Collector-Emitter Saturation Voltage (VCE(sat)) IC = 10 mA, IB = 0.5 mA - - 0.25 V V
Base-Emitter Saturation Voltage (VBE(sat)) IC = 10 mA, IB = 0.5 mA - - 0.7 V V
Power Dissipation (PD) - - - 310 mW mW
Junction Temperature (TJ) - - - 150 °C °C
Storage Temperature Range (TSTG) - -65 - 150 °C

Key Features

  • General Purpose NPN Transistor: Suitable for both switching and amplifier applications.
  • Low Noise: Ideal for applications requiring minimal noise interference.
  • SOT-23-3 Package: Compact package suitable for automatic insertion in thick and thin-film circuits.
  • High DC Current Gain (hFE): Ranges from 420 to 800, ensuring reliable performance in various circuits.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 0.25 V, which is beneficial for reducing power consumption.
  • Wide Operating Temperature Range: From -65°C to 150°C, making it versatile for different environmental conditions.

Applications

  • Switching Circuits: Used in digital circuits where high switching speeds are required.
  • Amplifier Circuits: Suitable for audio and signal amplification due to its low noise characteristics.
  • Automotive Electronics: Can be used in various automotive applications due to its robust temperature range.
  • Consumer Electronics: Found in many consumer devices such as audio equipment, televisions, and other electronic appliances.
  • Industrial Control Systems: Used in control circuits for industrial automation and monitoring systems.

Q & A

  1. What is the package type of the BC847CMTF transistor?

    The BC847CMTF transistor is packaged in a SOT-23-3 format.

  2. What are the typical applications of the BC847CMTF transistor?

    The BC847CMTF is used in switching and amplifier circuits, as well as in automotive, consumer, and industrial electronics.

  3. What is the maximum collector-emitter breakdown voltage of the BC847CMTF?

    The maximum collector-emitter breakdown voltage (VBRCEO) is 45 V.

  4. What is the DC current gain (hFE) range of the BC847CMTF?

    The DC current gain (hFE) ranges from 420 to 800.

  5. What is the maximum power dissipation of the BC847CMTF?

    The maximum power dissipation (PD) is 310 mW.

  6. What is the junction temperature range of the BC847CMTF?

    The junction temperature (TJ) range is up to 150 °C.

  7. What is the storage temperature range of the BC847CMTF?

    The storage temperature range (TSTG) is from -65°C to 150 °C.

  8. Is the BC847CMTF suitable for low noise applications?

    Yes, the BC847CMTF is known for its low noise characteristics, making it suitable for applications requiring minimal noise interference.

  9. What is the typical collector-emitter saturation voltage (VCE(sat)) of the BC847CMTF?

    The typical collector-emitter saturation voltage (VCE(sat)) is 0.25 V.

  10. Can the BC847CMTF be used in automotive electronics?

    Yes, the BC847CMTF can be used in automotive electronics due to its robust temperature range and reliability.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number BC847CMTF BC847BMTF
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 310 mW 310 mW
Frequency - Transition 300MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3

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