BC850CMTF
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onsemi BC850CMTF

Manufacturer No:
BC850CMTF
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850CMTF is an NPN epitaxial silicon transistor produced by onsemi. This component is part of the BC850 series, known for its high current gain and low noise characteristics. It is packaged in a SOT-23 3L format and is suitable for automatic insertion in thick and thin-film circuits. Although the BC850CMTF is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current (DC) IC 100 mA
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -65 to +150 °C
Power Dissipation PD 310 mW
Thermal Resistance, Junction-to-Ambient RθJA 403 °C/W
DC Current Gain (hFE) hFE 110 ~ 800
Collector-Emitter Saturation Voltage VCE(sat) 90 ~ 250 mV (IC = 10 mA, IB = 0.5 mA) mV
Base-Emitter On Voltage VBE(on) 580 ~ 700 mV (VCE = 5 V, IC = 2 mA) mV

Key Features

  • High Current Gain: The BC850CMTF has a high DC current gain (hFE) ranging from 110 to 800, making it suitable for amplifier applications.
  • Low Noise: This transistor is known for its low noise characteristics, which is particularly beneficial in audio and other sensitive applications.
  • Low Collector-Emitter Saturation Voltage: It features a low VCE(sat) of 90 to 250 mV, which is advantageous in switching and amplifier circuits.
  • Compact Packaging: The SOT-23 3L package makes it suitable for automatic insertion in both thick and thin-film circuits.

Applications

  • Switching and Amplifier Circuits: The BC850CMTF is ideal for use in switching and amplifier applications due to its high current gain and low saturation voltage.
  • Audio Frequency (AF) Stages: It is suitable for AF input stages and driver applications, particularly where low noise is critical.
  • General Purpose Electronics: This transistor can be used in a variety of general-purpose electronic circuits requiring high reliability and performance).

Q & A

  1. What is the package type of the BC850CMTF?

    The BC850CMTF is packaged in a SOT-23 3L format).

  2. What is the maximum collector-emitter voltage of the BC850CMTF?

    The maximum collector-emitter voltage (VCEO) is 45 V).

  3. What is the typical DC current gain (hFE) of the BC850CMTF?

    The typical DC current gain (hFE) ranges from 110 to 800).

  4. What is the maximum collector current (IC) of the BC850CMTF?

    The maximum collector current (IC) is 100 mA).

  5. What is the junction temperature range of the BC850CMTF?

    The junction temperature range is up to 150°C).

  6. Is the BC850CMTF still in production?

    No, the BC850CMTF is currently obsolete and no longer manufactured).

  7. What are some suitable substitutes for the BC850CMTF?

    Suitable substitutes include the BC847CLT1G from onsemi).

  8. What are the key features of the BC850CMTF?

    Key features include high current gain, low noise, low collector-emitter saturation voltage, and compact SOT-23 packaging).

  9. What are the typical applications of the BC850CMTF?

    Typical applications include switching and amplifier circuits, AF input stages, and general-purpose electronics).

  10. What is the thermal resistance of the BC850CMTF?

    The thermal resistance (RθJA) is 403 °C/W).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Same Series
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Similar Products

Part Number BC850CMTF BC850AMTF BC850BMTF
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Obsolete
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 310 mW 310 mW 310 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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