BC846BM3T5G
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onsemi BC846BM3T5G

Manufacturer No:
BC846BM3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 65V 0.1A SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BM3T5G is a general-purpose NPN silicon transistor manufactured by onsemi. This transistor is designed for a wide range of applications, including automotive and other sectors that require high reliability and specific control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. The device is also Pb-free, aligning with environmental regulations.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO65Vdc
Collector-Base VoltageVCBO80Vdc
Emitter-Base VoltageVEBO6.0Vdc
Collector Current - ContinuousIC100mAdc
Total Device Dissipation (FR-5 Board, TA = 25°C)PD265mW
Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)fT100MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)Cobo4.5pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)NF10dB

Key Features

  • Moisture Sensitivity Level: 1
  • ESD Rating: Human Body Model > 4000 V, Machine Model > 400 V
  • AEC-Q101 Qualified and PPAP Capable for automotive and other critical applications
  • Pb-free device, compliant with environmental regulations
  • High collector-emitter breakdown voltage (VCEO = 65 Vdc)
  • High collector-base breakdown voltage (VCBO = 80 Vdc)
  • Low noise figure (NF = 10 dB at specified conditions)

Applications

The BC846BM3T5G transistor is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is ideal for use in automotive electronics.
  • General-purpose amplification: Its high current gain and bandwidth make it suitable for amplification in various electronic circuits.
  • Switching applications: The transistor's high breakdown voltages and low noise figure make it a good choice for switching circuits.
  • Consumer electronics: It can be used in a range of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BC846BM3T5G transistor?
    The collector-emitter voltage rating is 65 Vdc.
  2. Is the BC846BM3T5G transistor Pb-free?
    Yes, the BC846BM3T5G is a Pb-free device.
  3. What is the ESD rating of the BC846BM3T5G transistor?
    The ESD rating is > 4000 V for the Human Body Model and > 400 V for the Machine Model.
  4. What are the typical applications of the BC846BM3T5G transistor?
    The transistor is suitable for automotive systems, general-purpose amplification, switching applications, and consumer electronics.
  5. What is the current-gain-bandwidth product of the BC846BM3T5G transistor?
    The current-gain-bandwidth product is 100 MHz at specified conditions.
  6. Is the BC846BM3T5G transistor AEC-Q101 qualified?
    Yes, the BC846BM3T5G is AEC-Q101 qualified and PPAP capable.
  7. What is the noise figure of the BC846BM3T5G transistor?
    The noise figure is 10 dB at specified conditions.
  8. What is the maximum collector current of the BC846BM3T5G transistor?
    The maximum collector current is 100 mA.
  9. What is the total device dissipation of the BC846BM3T5G transistor on an FR-5 board at 25°C?
    The total device dissipation is 265 mW.
  10. What is the output capacitance of the BC846BM3T5G transistor?
    The output capacitance is 4.5 pF at specified conditions.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:265 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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Same Series
NSVBC846BM3T5G
NSVBC846BM3T5G
TRANS NPN 65V 0.1A SOT723

Similar Products

Part Number BC846BM3T5G BC846BM3T5H
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 65 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V -
Power - Max 265 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case SOT-723 -
Supplier Device Package SOT-723 -

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