30C02CH-TL-E
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onsemi 30C02CH-TL-E

Manufacturer No:
30C02CH-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 30V 0.7A 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 30C02CH-TL-E is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a variety of applications requiring high current and voltage handling capabilities. It is particularly suited for use in RF amplifiers, switching circuits, and other high-frequency applications due to its high nominal transition frequency (fT) and low saturation voltage.

Key Specifications

ParameterValue
ConfigurationSINGLE
Surface MountYES
Collector-Base Voltage (Vcb)30V
Collector-Emitter Voltage (Vce)30V
Emitter-Base Voltage (Veb)5V
Collector Current (Ic)0.7A
Base Current (Ib)70mA
Nominal Transition Frequency (fT)540 MHz
Package TypeCPH3 (SOT-23-3)
Pb FreeYES

Key Features

  • High collector current of 0.7A and collector-emitter voltage of 30V, making it suitable for high-power applications.
  • High nominal transition frequency (fT) of 540 MHz, ideal for RF amplifiers and high-frequency circuits.
  • Low saturation voltage, reducing power losses and improving efficiency.
  • Surface mount package (CPH3/SOT-23-3) for compact and reliable mounting.
  • Pb-free, complying with environmental regulations.

Applications

The 30C02CH-TL-E transistor is versatile and can be used in a variety of applications, including:

  • RF amplifiers and high-frequency circuits due to its high fT.
  • Switching circuits where high current and voltage handling are required.
  • General-purpose amplifiers and drivers.
  • Automotive and industrial control systems.

Q & A

  1. What is the collector-emitter voltage (Vce) of the 30C02CH-TL-E transistor?
    The collector-emitter voltage (Vce) is 30V.
  2. What is the nominal transition frequency (fT) of this transistor?
    The nominal transition frequency (fT) is 540 MHz.
  3. Is the 30C02CH-TL-E transistor Pb-free?
    Yes, the 30C02CH-TL-E transistor is Pb-free.
  4. What is the package type of the 30C02CH-TL-E transistor?
    The package type is CPH3 (SOT-23-3).
  5. What is the maximum collector current (Ic) of this transistor?
    The maximum collector current (Ic) is 0.7A.
  6. What are some common applications of the 30C02CH-TL-E transistor?
    Common applications include RF amplifiers, switching circuits, general-purpose amplifiers, and automotive/industrial control systems.
  7. What is the emitter-base voltage (Veb) of the 30C02CH-TL-E transistor?
    The emitter-base voltage (Veb) is 5V.
  8. Is the 30C02CH-TL-E suitable for high-frequency applications?
    Yes, it is suitable due to its high fT of 540 MHz.
  9. What is the base current (Ib) rating of the 30C02CH-TL-E transistor?
    The base current (Ib) rating is 70mA.
  10. Where can I find detailed specifications and datasheets for the 30C02CH-TL-E transistor?
    Detailed specifications and datasheets can be found on official onsemi websites, as well as through distributors like Mouser, Digi-Key, and Vyrian.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):700 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:190mV @ 10mA, 200mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 50mA, 2V
Power - Max:700 mW
Frequency - Transition:540MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-96
Supplier Device Package:3-CPH
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Similar Products

Part Number 30C02CH-TL-E 50C02CH-TL-E 30C02MH-TL-E 30A02CH-TL-E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 700 mA 500 mA 700 mA 700 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 50 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 190mV @ 10mA, 200mA 100mV @ 10mA, 100mA 190mV @ 10mA, 200mA 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 50mA, 2V 300 @ 10mA, 2V 300 @ 50mA, 2V 200 @ 10mA, 2V
Power - Max 700 mW 700 mW 600 mW 700 mW
Frequency - Transition 540MHz 500MHz 540MHz 520MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-96 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-96
Supplier Device Package 3-CPH 3-CPH 3-MCPH 3-CPH

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