50C02CH-TL-E
  • Share:

onsemi 50C02CH-TL-E

Manufacturer No:
50C02CH-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 50V 0.5A 3CPH
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 50C02CH-TL-E is a bipolar junction transistor (BJT) manufactured by onsemi. It is an NPN single transistor designed for low-frequency general-purpose amplifier applications. This transistor is notable for its low VCE(sat) characteristics, making it suitable for a variety of low-power surface mount applications.

Key Specifications

ParameterValue
Voltage Rating (VCE)50V
Collector Current (IC)0.5A
Power Dissipation (PD)700mW
VCE(sat)300mV @ 10mA, 2V
Package TypeSOT-363/SC-88, DFN2020-3
RoHS ComplianceYes

Key Features

  • Low VCE(sat) for efficient operation
  • NPN single transistor configuration
  • Suitable for low-frequency general-purpose amplifier applications
  • Compact SOT-363/SC-88 and DFN2020-3 packages for surface mount applications
  • RoHS compliant for environmental sustainability

Applications

The 50C02CH-TL-E is designed for use in various low-power electronic circuits, including general-purpose amplifiers, switching circuits, and other applications where low VCE(sat) is beneficial. It is particularly useful in surface mount technologies due to its compact packaging.

Q & A

  1. What is the voltage rating of the 50C02CH-TL-E transistor?
    The voltage rating (VCE) of the 50C02CH-TL-E transistor is 50V.
  2. What is the maximum collector current of the 50C02CH-TL-E transistor?
    The maximum collector current (IC) of the 50C02CH-TL-E transistor is 0.5A.
  3. What is the power dissipation of the 50C02CH-TL-E transistor?
    The power dissipation (PD) of the 50C02CH-TL-E transistor is 700mW.
  4. What is the VCE(sat) of the 50C02CH-TL-E transistor?
    The VCE(sat) of the 50C02CH-TL-E transistor is 300mV @ 10mA, 2V.
  5. In what packages is the 50C02CH-TL-E transistor available?
    The 50C02CH-TL-E transistor is available in SOT-363/SC-88 and DFN2020-3 packages.
  6. Is the 50C02CH-TL-E transistor RoHS compliant?
    Yes, the 50C02CH-TL-E transistor is RoHS compliant.
  7. What type of transistor is the 50C02CH-TL-E?
    The 50C02CH-TL-E is an NPN single bipolar junction transistor (BJT).
  8. What are the typical applications of the 50C02CH-TL-E transistor?
    The 50C02CH-TL-E transistor is typically used in low-frequency general-purpose amplifier applications and other low-power surface mount applications.
  9. Why is the low VCE(sat) of the 50C02CH-TL-E important?
    The low VCE(sat) of the 50C02CH-TL-E is important because it reduces power losses and improves efficiency in the circuit.
  10. Where can I find detailed specifications for the 50C02CH-TL-E transistor?
    Detailed specifications for the 50C02CH-TL-E transistor can be found in the datasheet available on the onsemi website, Digi-Key, Mouser, and other authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:100mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Power - Max:700 mW
Frequency - Transition:500MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:3-CPH
0 Remaining View Similar

In Stock

$0.49
1,647

Please send RFQ , we will respond immediately.

Similar Products

Part Number 50C02CH-TL-E 50C02MH-TL-E 30C02CH-TL-E 50A02CH-TL-E
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 700 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 30 V 50 V
Vce Saturation (Max) @ Ib, Ic 100mV @ 10mA, 100mA 100mV @ 10mA, 100mA 190mV @ 10mA, 200mA 120mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V 300 @ 10mA, 2V 300 @ 50mA, 2V 200 @ 10mA, 2V
Power - Max 700 mW 600 mW 700 mW 700 mW
Frequency - Transition 500MHz 500MHz 540MHz 690MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 3-SMD, Flat Lead SC-96 TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CPH 3-MCPH 3-CPH 3-CPH

Related Product By Categories

BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
2SC3648T-TD-E
2SC3648T-TD-E
onsemi
TRANS NPN 160V 0.7A PCP
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MM3Z13VT1G
MM3Z13VT1G
onsemi
DIODE ZENER 13V 300MW SOD323
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
MC33275ST-5.0T3G
MC33275ST-5.0T3G
onsemi
IC REG LINEAR 5V 300MA SOT223
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC