Overview
The 2SK3557-7-TB-E is an N-Channel Junction Field-Effect Transistor (JFET) produced by onsemi. This device is designed for low-frequency amplifier applications and is known for its high performance and reliability. It features a small, ultrasmall-sized package, making it ideal for compact electronic designs. The 2SK3557-7-TB-E is part of the 2SK3557 series, which is classified based on the drain current (IDSS) and is available in various rankings to suit different application requirements.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | - | 15 | V |
| Gate-to-Drain Voltage | VGDS | - | -15 | V |
| Gate Current | IG | - | 10 | mA |
| Drain Current | ID | - | 50 | mA |
| Allowable Power Dissipation | PD | - | 200 | mW |
| Junction Temperature | Tj | - | 150 | °C |
| Storage Temperature | Tstg | - | -55 to +150 | °C |
| Gate Cutoff Current | IGSS | VGS = -10 V, VDS = 0 V | -1.0 | nA |
| Cutoff Voltage | VGS(off) | VDS = 5 V, ID = 100 μA | -0.3 to -1.5 | V |
| Drain Current (IDSS) | IDSS | VDS = 5 V, VGS = 0 V | 16 to 32 | mA |
| Forward Transfer Admittance | |yfs| | VDS = 5 V, VGS = 0 V, f = 1 kHz | 24 to 35 | mS |
| Input Capacitance | Ciss | VDS = 5 V, VGS = 0 V, f = 1 MHz | -10.0 | pF |
| Reverse Transfer Capacitance | Crss | VDS = 5 V, VGS = 0 V, f = 1 MHz | -2.9 | pF |
| Noise Figure | NF | VDS = 5 V, Rg = 1 kΩ, ID = 1 mA, f = 1 kHz | -1.0 | dB |
Key Features
- Large Forward Transfer Admittance (|yfs|): The 2SK3557-7-TB-E features a high forward transfer admittance, which is crucial for amplifier applications.
- Small Input Capacitance (Ciss): With an input capacitance of up to 10 pF, this JFET minimizes the impact on high-frequency signals.
- Ultrasmall-sized Package: Available in packages such as TO-236-3, SC-59, and SOT-23-3, this device is ideal for compact designs.
- Ultralow Noise Figure: The device has a low noise figure, making it suitable for low-noise amplifier applications.
- Pb-Free Devices: The 2SK3557-7-TB-E is lead-free, complying with environmental regulations.
Applications
- AM Tuner RF Amplification: This JFET is often used in AM tuner circuits due to its low noise and high gain characteristics.
- Low Noise Amplifier: Its ultralow noise figure makes it an excellent choice for low-noise amplifier applications in various electronic systems.
- Compact Electronic Designs: The small package size of the 2SK3557-7-TB-E makes it suitable for use in space-constrained electronic devices.
Q & A
- What is the maximum drain-to-source voltage for the 2SK3557-7-TB-E?
The maximum drain-to-source voltage (VDS) is 15 V.
- What is the typical forward transfer admittance of the 2SK3557-7-TB-E?
The typical forward transfer admittance (|yfs|) is 35 mS.
- What are the package options available for the 2SK3557-7-TB-E?
The device is available in TO-236-3, SC-59, and SOT-23-3 packages.
- What is the maximum junction temperature for the 2SK3557-7-TB-E?
The maximum junction temperature (Tj) is 150°C.
- What is the typical noise figure of the 2SK3557-7-TB-E?
The typical noise figure (NF) is 1.0 dB.
- Is the 2SK3557-7-TB-E lead-free?
Yes, the 2SK3557-7-TB-E is a lead-free device.
- What is the range of drain current (IDSS) for the 2SK3557-7-TB-E?
The drain current (IDSS) ranges from 16 to 32 mA.
- What is the input capacitance (Ciss) of the 2SK3557-7-TB-E?
The input capacitance (Ciss) is up to 10 pF.
- What are some common applications of the 2SK3557-7-TB-E?
Common applications include AM tuner RF amplification and low-noise amplifier circuits.
- What is the storage temperature range for the 2SK3557-7-TB-E?
The storage temperature range is -55°C to +150°C.
