2SC4027S-H
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onsemi 2SC4027S-H

Manufacturer No:
2SC4027S-H
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 160V 1.5A TP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2SC4027S-H is an NPN bipolar junction transistor (BJT) produced by onsemi. Although this product is currently obsolete and no longer manufactured, it was designed for various high-current applications. The transistor is known for its robust performance and reliability in handling significant current and voltage levels.

Key Specifications

Parameter Value
Transistor Type NPN
Current - Collector (Ic) (Max) 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V
Collector-Emitter Saturation Voltage 130 mV
Power Dissipation (Pd) 1 W
Gain Bandwidth Product (fT) 120 MHz
Minimum Operating Temperature -55°C

Key Features

  • High Current Handling: The 2SC4027S-H can handle a maximum collector current of 1.5 A, making it suitable for high-current applications.
  • High Voltage Capability: With a maximum collector-emitter breakdown voltage of 160 V, this transistor is robust against voltage spikes and surges.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage of 130 mV, which helps in reducing power losses.
  • High Gain Bandwidth Product: The gain bandwidth product of 120 MHz indicates good high-frequency performance.

Applications

  • Power Amplifiers: Due to its high current and voltage handling capabilities, the 2SC4027S-H is suitable for use in power amplifier circuits.
  • Switching Circuits: The transistor's low saturation voltage and high gain bandwidth product make it a good choice for switching applications.
  • Industrial Control Systems: It can be used in various industrial control systems where high reliability and robust performance are required.

Q & A

  1. What is the maximum collector current of the 2SC4027S-H?

    The maximum collector current is 1.5 A.

  2. What is the maximum collector-emitter breakdown voltage of the 2SC4027S-H?

    The maximum collector-emitter breakdown voltage is 160 V.

  3. What is the collector-emitter saturation voltage of the 2SC4027S-H?

    The collector-emitter saturation voltage is 130 mV.

  4. What is the power dissipation (Pd) of the 2SC4027S-H?

    The power dissipation is 1 W.

  5. What is the gain bandwidth product (fT) of the 2SC4027S-H?

    The gain bandwidth product is 120 MHz.

  6. Is the 2SC4027S-H still in production?

    No, the 2SC4027S-H is currently obsolete and no longer manufactured.

  7. What type of transistor is the 2SC4027S-H?

    The 2SC4027S-H is an NPN bipolar junction transistor (BJT).

  8. What are some common applications of the 2SC4027S-H?

    Common applications include power amplifiers, switching circuits, and industrial control systems.

  9. What is the minimum operating temperature of the 2SC4027S-H?

    The minimum operating temperature is -55°C.

  10. Where can I find detailed specifications for the 2SC4027S-H?

    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):160 V
Vce Saturation (Max) @ Ib, Ic:450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 5V
Power - Max:1 W
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:TP
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Same Series
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2SA1552S-TL-E
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2SC4027S-TL-H
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2SC4027T-H
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Similar Products

Part Number 2SC4027S-H 2SC4027T-H 2SC4027S-E
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 160 V 160 V 160 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA 450mV @ 50mA, 500mA 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V 200 @ 100mA, 5V 100 @ 100mA, 5V
Power - Max 1 W 1 W 1 W
Frequency - Transition 120MHz 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP TP TP

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