Overview
The 2SB1124T-TD-E is a PNP bipolar transistor manufactured by onsemi. This component is part of the 2SB1124/2SD1624 series, known for its low collector-to-emitter saturation voltage, fast switching speed, and large current capacity. It is designed for various applications requiring high performance and reliability.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | Ta=25°C | -60 | V |
| Collector-to-Emitter Voltage | VCEO | Ta=25°C | -50 | V |
| Emitter-to-Base Voltage | VEBO | Ta=25°C | -6 | V |
| Collector Current | IC | Ta=25°C | -3 | A |
| Collector Current (Pulse) | ICP | Ta=25°C | -6 | A |
| Junction Temperature | Tj | -150 | °C | |
| Storage Temperature | Tstg | -55 to +150 | °C | |
| Collector Dissipation | PC | Mounted on ceramic substrate (250mm²×0.8mm) | 1.5 | W |
| DC Current Gain (hFE1) | hFE1 | VCE=-2V, IC=-100mA | 100-560 | |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC=-2A, IB=-100mA | -0.35 to -0.7 | V |
| Base-to-Emitter Saturation Voltage | VBE(sat) | VCE=-2V, IC=-100mA | -0.94 to -1.2 | V |
Key Features
- Low collector-to-emitter saturation voltage (VCE(sat)) for efficient operation.
- Fast switching speed, making it suitable for high-frequency applications.
- Large current capacity with a maximum collector current of 3A.
- Adoption of FBET and MBIT processes for enhanced performance.
- Pb-free and halogen-free options available, ensuring environmental compliance.
Applications
The 2SB1124T-TD-E is versatile and can be used in various applications, including:
- Voltage regulators.
- Relay drivers.
- Lamp drivers.
- Electrical equipment.
Q & A
- What is the maximum collector-to-emitter voltage for the 2SB1124T-TD-E?
The maximum collector-to-emitter voltage (VCEO) is -50V. - What is the maximum collector current for this transistor?
The maximum collector current (IC) is -3A. - What is the typical collector-to-emitter saturation voltage?
The typical collector-to-emitter saturation voltage (VCE(sat)) is -0.19 to -0.7V. - What is the junction temperature range for this component?
The junction temperature (Tj) range is up to 150°C. - Is the 2SB1124T-TD-E Pb-free and halogen-free?
Yes, Pb-free and halogen-free options are available. - What are the typical applications for the 2SB1124T-TD-E?
Typical applications include voltage regulators, relay drivers, lamp drivers, and electrical equipment. - What is the package type for the 2SB1124T-TD-E?
The package type is PCP (Plastic Case PNP), specifically SOT-89-3. - What is the collector dissipation when mounted on a ceramic substrate?
The collector dissipation (PC) is 1.5W when mounted on a ceramic substrate (250mm²×0.8mm). - What is the DC current gain (hFE) range for this transistor?
The DC current gain (hFE) range is 100 to 560 at VCE=-2V and IC=-100mA. - What is the storage temperature range for the 2SB1124T-TD-E?
The storage temperature (Tstg) range is -55 to +150°C.
