Overview
The 2SD1624T-TD-E is a discrete NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of power amplification and switching applications. It features advanced technologies such as the FBET (Field-Effect Bipolar Transistor) and MBIT (Merged Bipolar Insulated Gate Transistor) processes, which enhance its performance and reliability.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | -60 | V |
| Collector-to-Emitter Voltage | VCEO | - | -50 | V |
| Emitter-to-Base Voltage | VEBO | - | -6 | V |
| Collector Current | IC | - | -3 A | A |
| Collector Current (Pulse) | ICP | - | -6 A | A |
| Junction Temperature | Tj | - | 150 °C | °C |
| Storage Temperature | Tstg | -55 to +150 | °C | |
| Collector Dissipation | PC | Mounted on ceramic substrate (250mm² x 0.8mm) | 1.5 W | W |
| DC Current Gain (hFE1) | hFE1 | VCE = -2 V, IC = -100 mA | 100 to 560 | - |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC = -2 A, IB = -100 mA | -0.35 to -0.7 V | V |
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC = -2 A, IB = -100 mA | -0.94 to -1.2 V | V |
| Gain-Bandwidth Product | fT | VCE = -10 V, IC = -50 mA | 150 MHz | MHz |
Key Features
- Advanced Processes: Utilizes FBET and MBIT processes for enhanced performance and reliability.
- Low VCE(sat): Offers low collector-to-emitter saturation voltage, which is beneficial for reducing power losses.
- Fast Switching Speed: Features fast switching times, making it suitable for high-frequency applications.
- Large Current Capacity: Supports high collector current up to 3 A and pulse current up to 6 A.
- Compact Package: Available in PCP (Plastic Chip Carrier) package, which is compact and suitable for various applications.
Applications
- Voltage Regulators: Used in voltage regulator circuits due to its high current handling and low VCE(sat).
- Relay Drivers: Suitable for driving relays in various control systems.
- Lamp Drivers: Can be used to drive lamps and other high-current loads.
- Electrical Equipment: Used in a variety of electrical equipment requiring high current and low voltage drop.
Q & A
- What is the maximum collector-to-emitter voltage for the 2SD1624T-TD-E?
The maximum collector-to-emitter voltage (VCEO) is -50 V.
- What is the maximum collector current for the 2SD1624T-TD-E?
The maximum collector current (IC) is -3 A, and the maximum pulse current (ICP) is -6 A.
- What is the typical DC current gain (hFE) for the 2SD1624T-TD-E?
The typical DC current gain (hFE) ranges from 100 to 560, depending on the current and voltage conditions.
- What is the collector-to-emitter saturation voltage (VCE(sat)) for the 2SD1624T-TD-E?
The collector-to-emitter saturation voltage (VCE(sat)) is typically between -0.35 V and -0.7 V.
- What is the gain-bandwidth product (fT) for the 2SD1624T-TD-E?
The gain-bandwidth product (fT) is 150 MHz at VCE = -10 V and IC = -50 mA.
- What are the typical applications for the 2SD1624T-TD-E?
Typical applications include voltage regulators, relay drivers, lamp drivers, and various electrical equipment.
- What package type is the 2SD1624T-TD-E available in?
The 2SD1624T-TD-E is available in the PCP (Plastic Chip Carrier) package.
- What is the maximum junction temperature for the 2SD1624T-TD-E?
The maximum junction temperature (Tj) is 150 °C.
- What is the storage temperature range for the 2SD1624T-TD-E?
The storage temperature range (Tstg) is from -55 °C to +150 °C.
- What is the collector dissipation for the 2SD1624T-TD-E when mounted on a ceramic substrate?
The collector dissipation (PC) is 1.5 W when mounted on a ceramic substrate (250mm² x 0.8mm).
- Is the 2SD1624T-TD-E lead-free and halogen-free?
Yes, the 2SD1624T-TD-E is available in lead-free and halogen-free versions.
