Overview
The 2SA2016-TD-E is a PNP bipolar transistor manufactured by onsemi. This transistor is designed for high-performance applications, particularly in DC-DC converter circuits, relay drivers, and lamp drivers. It features advanced technologies such as the FBET (Field-Effect Bipolar Transistor) and MBIT (Merged Bipolar Insulated Gate Transistor) processes, which enhance its switching speed and current handling capabilities.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (V_CBO) | -50 | V |
| Collector-Emitter Voltage (V_CEO) | -50 | V |
| Emitter-Base Voltage (V_EBO) | -5 | V |
| Collector Current (I_C) | -7 | A |
| Base Current (I_B) | -500 | mA |
| Collector-Emitter Saturation Voltage (V_CE(sat)) | 0.2 | V |
| Power Dissipation (P_C) | 3.5 | W |
| Package Type | SOT-89-3 | |
| RoHS Compliance | Yes |
Key Features
- Adoption of FBET and MBIT processes for enhanced performance.
- Large current capacity, supporting up to 7A collector current.
- Low collector-to-emitter saturation voltage (V_CE(sat)) of 0.2V.
- High-speed switching capabilities.
- Compact SOT-89-3 package for space-efficient designs.
- RoHS compliant, ensuring environmental sustainability.
Applications
- DC-DC converter applications.
- Relay drivers.
- Lamp drivers.
- General-purpose switching and amplification.
Q & A
- What is the collector-emitter voltage rating of the 2SA2016-TD-E transistor?
The collector-emitter voltage rating is -50V.
- What is the maximum collector current for the 2SA2016-TD-E?
The maximum collector current is 7A.
- What package type is the 2SA2016-TD-E transistor available in?
The transistor is available in the SOT-89-3 package.
- Is the 2SA2016-TD-E RoHS compliant?
Yes, the 2SA2016-TD-E is RoHS compliant.
- What are the key processes used in the 2SA2016-TD-E transistor?
The transistor uses FBET and MBIT processes.
- What is the typical collector-emitter saturation voltage (V_CE(sat)) of the 2SA2016-TD-E?
The typical V_CE(sat) is 0.2V.
- What are some common applications of the 2SA2016-TD-E transistor?
Common applications include DC-DC converters, relay drivers, and lamp drivers.
- What is the power dissipation rating of the 2SA2016-TD-E transistor?
The power dissipation rating is 3.5W.
- Does the 2SA2016-TD-E support high-speed switching?
Yes, the transistor is designed for high-speed switching applications.
- Where can I find detailed specifications for the 2SA2016-TD-E transistor?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.
