Overview
The 2SA2013-TD-E is a bipolar transistor produced by onsemi, designed for high-performance applications. This transistor is part of the 2SA2013/2SC5566 series and is known for its low collector-to-emitter saturation voltage and high-speed switching capabilities. It is packaged in a PCP (Plastic Chip Carrier) package, which facilitates miniaturization in end products.
Key Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector-to-Base Voltage | VCBO | - | -50 to 100 | V |
| Collector-to-Emitter Voltage | VCES | - | -50 to 100 | V |
| Collector Current | IC | - | -4 A | A |
| Collector Current (Pulse) | ICP | - | -7 A | A |
| Base Current | IB | - | -600 mA | mA |
| Collector Dissipation | PC | When mounted on ceramic substrate (250mm² x 0.8mm) | 1.3 W (Tc=25°C), 3.5 W (Tc=25°C) | W |
| Junction Temperature | Tj | - | 150 °C | °C |
| Storage Temperature | Tstg | - | -55 to +150 °C | °C |
| DC Current Gain | hFE | VCE = -2 V, IC = -500 mA | 200 to 560 | - |
| Collector-to-Emitter Saturation Voltage | VCE(sat) | IC = -1 A, IB = -50 mA | -105 to -85 mV | mV |
| Base-to-Emitter Saturation Voltage | VBE(sat) | IC = -2 A, IB = -100 mA | -0.89 to -1.2 V | V |
Key Features
- Adoption of FBET and MBIT processes for enhanced performance.
- Large current capacity with a collector current of up to 4 A.
- Low collector-to-emitter saturation voltage (VCE(sat)) for efficient operation.
- High-speed switching capabilities.
- Ultrasmall package (PCP) facilitating miniaturization in end products.
- High allowable power dissipation.
Applications
- Relay drivers.
- Lamp drivers.
- Motor drivers.
- Flash drivers.
Q & A
- What is the maximum collector current of the 2SA2013-TD-E transistor?
The maximum collector current is -4 A.
- What is the collector-to-emitter saturation voltage (VCE(sat)) of the 2SA2013-TD-E transistor?
The VCE(sat) ranges from -105 to -85 mV for IC = -1 A and IB = -50 mA.
- What is the base-to-emitter saturation voltage (VBE(sat)) of the 2SA2013-TD-E transistor?
The VBE(sat) ranges from -0.89 to -1.2 V for IC = -2 A and IB = -100 mA.
- What are the typical applications of the 2SA2013-TD-E transistor?
Typical applications include relay drivers, lamp drivers, motor drivers, and flash drivers.
- What is the junction temperature rating of the 2SA2013-TD-E transistor?
The junction temperature rating is 150 °C.
- What is the storage temperature range for the 2SA2013-TD-E transistor?
The storage temperature range is -55 to +150 °C.
- What is the DC current gain (hFE) of the 2SA2013-TD-E transistor?
The DC current gain (hFE) ranges from 200 to 560 for VCE = -2 V and IC = -500 mA.
- What is the package type of the 2SA2013-TD-E transistor?
The package type is PCP (Plastic Chip Carrier).
- What is the maximum collector dissipation of the 2SA2013-TD-E transistor when mounted on a ceramic substrate?
The maximum collector dissipation is 1.3 W at Tc=25°C and 3.5 W at Tc=25°C when mounted on a ceramic substrate (250mm² x 0.8mm).
- Is the 2SA2013-TD-E transistor suitable for high-speed switching applications?
Yes, the transistor is designed for high-speed switching applications.
