Overview
The 2SC5566-TD-E is a high-performance NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for various power management and switching applications, particularly in DC-DC converters. It features a low collector-to-emitter saturation voltage (VCE(sat)), making it efficient for high-current and low-loss operations.
Key Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vce) | 50 V |
| Collector Current (Ic) | 4 A |
| Power Dissipation (Pd) | 3.5 W |
| Collector-to-Emitter Saturation Voltage (Vce(sat)) | 200 mV @ 500 mA, 2 V |
| Package Type | SOT-89-3 |
| RoHS Compliance | Yes |
Key Features
- Adoption of FBET and MBIT processes for enhanced performance.
- Large current capacity, supporting up to 4 A of collector current.
- Low collector-to-emitter saturation voltage (Vce(sat)) for reduced power losses.
- Compact SOT-89-3 package suitable for surface mount applications.
- RoHS compliant, ensuring environmental sustainability.
Applications
The 2SC5566-TD-E is primarily designed for DC-DC converter applications, where high current handling and low power losses are critical. It is also suitable for other power management and switching applications that require reliable and efficient performance.
Q & A
- What is the collector-emitter voltage rating of the 2SC5566-TD-E?
The collector-emitter voltage rating is 50 V.
- What is the maximum collector current of the 2SC5566-TD-E?
The maximum collector current is 4 A.
- What is the power dissipation of the 2SC5566-TD-E?
The power dissipation is 3.5 W.
- What is the collector-to-emitter saturation voltage (Vce(sat)) of the 2SC5566-TD-E?
The Vce(sat) is 200 mV @ 500 mA, 2 V.
- What package type does the 2SC5566-TD-E use?
The package type is SOT-89-3.
- Is the 2SC5566-TD-E RoHS compliant?
Yes, it is RoHS compliant.
- What are the primary applications of the 2SC5566-TD-E?
The primary applications are DC-DC converter and other power management and switching applications.
- What processes are used in the manufacturing of the 2SC5566-TD-E?
The manufacturing uses FBET and MBIT processes.
- Why is the low Vce(sat) important in the 2SC5566-TD-E?
The low Vce(sat) reduces power losses and enhances efficiency in high-current applications.
- Where can I find detailed specifications for the 2SC5566-TD-E?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.
