Overview
The 2N6043G is a medium-power NPN Darlington transistor manufactured by onsemi. It is part of the 2N6040 and 2N6043 series, designed for general-purpose amplifier and low-speed switching applications. This transistor is built using the epitaxial base process and is housed in a TO-220 package, which is lead-free. The 2N6043G is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 60 | V | |
| Emitter-Base Voltage | VEBO | 5.0 | V | |
| Continuous Collector Current | IC | 8.0 | A | |
| Peak Collector Current | ICM | 16 | A | |
| Base Current | IB | 120 | mA | |
| Power Dissipation | PD | 75 | W | |
| Operating and Storage Junction Temperature | TJ, Tstg | -65 | +150 | °C |
| Thermal Resistance, Junction-to-Case | ΘJC | 1.67 | °C/W | |
| DC Current Gain | hFE | 1000 | 20000 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.0 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | 4.5 | V |
Key Features
- High DC Current Gain: The 2N6043G has a high DC current gain (hFE) of 1000 to 20000 at IC = 4.0 A and VCE = 4.0 V, making it suitable for amplifier applications.
- Low Collector-Emitter Saturation Voltage: The transistor features a low VCE(sat) of 2.0 V at IC = 4.0 A and IB = 16 mA, which reduces power losses in switching applications.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors: This design enhances the transistor's stability and performance.
- High Collector-Emitter Sustaining Voltage: The VCEO(sus) is 60 Vdc (min) at IC = 100 mA, ensuring robust operation under various conditions.
- Wide Operating Temperature Range: The transistor can operate over a junction temperature range of -65°C to +150°C.
Applications
- General-Purpose Amplifiers: The 2N6043G is well-suited for general-purpose amplifier applications due to its high current gain and low saturation voltage.
- Low-Speed Switching: It is used in low-speed switching applications where high current handling and low power losses are required.
- Power Supplies and Motor Control: The transistor can be used in power supply circuits and motor control systems where reliable and efficient switching is necessary.
- Automotive and Industrial Electronics: Its robust design and wide temperature range make it suitable for use in automotive and industrial electronic systems.
Q & A
- What is the package type of the 2N6043G transistor?
The 2N6043G transistor is housed in a TO-220 package, which is lead-free.
- What is the maximum continuous collector current of the 2N6043G?
The maximum continuous collector current (IC) is 8.0 A.
- What is the typical DC current gain (hFE) of the 2N6043G?
The typical DC current gain (hFE) is 2500 at IC = 4.0 A and VCE = 4.0 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the 2N6043G?
The collector-emitter saturation voltage (VCE(sat)) is 2.0 V at IC = 4.0 A and IB = 16 mA.
- What is the operating temperature range of the 2N6043G?
The operating temperature range is -65°C to +150°C.
- What are the typical applications of the 2N6043G transistor?
The 2N6043G is typically used in general-purpose amplifier and low-speed switching applications.
- What is the thermal resistance (ΘJC) of the 2N6043G?
The thermal resistance (ΘJC) is 1.67 °C/W.
- What is the maximum power dissipation (PD) of the 2N6043G?
The maximum power dissipation (PD) is 75 W.
- Does the 2N6043G have built-in base-emitter shunt resistors?
- What is the collector-emitter sustaining voltage (VCEO(sus)) of the 2N6043G?
The collector-emitter sustaining voltage (VCEO(sus)) is 60 Vdc (min) at IC = 100 mA.
- Is the 2N6043G suitable for high-frequency applications?
No, the 2N6043G is more suited for low-speed switching and general-purpose amplifier applications rather than high-frequency applications.
