2N6042G
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onsemi 2N6042G

Manufacturer No:
2N6042G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DARL 100V 8A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N6042G is a medium-power Darlington transistor produced by onsemi. It is part of the 2N604x series, which includes both PNP and NPN types designed for general-purpose amplifier and low-speed switching applications. This transistor is known for its high DC current gain and robust thermal characteristics, making it suitable for a variety of power management and control circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 100 Vdc
Collector-Base Voltage VCB 100 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Continuous Collector Current IC 8.0 Adc
Peak Collector Current IC 16 Adc
Base Current IB 120 mAdc
Total Power Dissipation @ TC = 25°C PD 75 W
Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 °C
DC Current Gain (hFE) @ IC = 3.0 Adc, VCE = 4.0 Vdc hFE 1000 to 20000
Collector-Emitter Saturation Voltage @ IC = 3.0 Adc, IB = 12 mAdc VCE(sat) 2.0 Vdc

Key Features

  • High DC Current Gain: The 2N6042G has a high DC current gain (hFE) of 1000 to 20000 at IC = 3.0 Adc and VCE = 4.0 Vdc, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage: The transistor features a low VCE(sat) of 2.0 Vdc at IC = 3.0 Adc and IB = 12 mAdc, which reduces power losses in switching circuits.
  • Robust Thermal Characteristics: With a thermal resistance of 1.67 °C/W (junction-to-case) and 57 °C/W (junction-to-ambient), the transistor can handle high power dissipation.
  • ESD Ratings: The device has high ESD ratings, with Human Body Model > 8000 V and Machine Model > 400 V, ensuring robustness against electrostatic discharge.
  • Pb-Free and RoHS Compliant: The 2N6042G is lead-free and compliant with RoHS standards, making it environmentally friendly.

Applications

  • General-Purpose Amplifiers: The 2N6042G is suitable for use in general-purpose amplifier circuits due to its high current gain and low saturation voltage.
  • Low-Speed Switching: It is ideal for low-speed switching applications where high current handling and low power losses are required.
  • Power Management Circuits: The transistor can be used in various power management circuits, including power supplies, motor control, and relay drivers.
  • Automotive and Industrial Control Systems: Its robust thermal and electrical characteristics make it a good choice for automotive and industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the 2N6042G transistor?

    The collector-emitter voltage (VCEO) rating of the 2N6042G transistor is 100 Vdc.

  2. What is the maximum continuous collector current for the 2N6042G?

    The maximum continuous collector current (IC) for the 2N6042G is 8.0 Adc.

  3. What is the typical DC current gain (hFE) of the 2N6042G transistor?

    The typical DC current gain (hFE) of the 2N6042G transistor is between 1000 to 20000 at IC = 3.0 Adc and VCE = 4.0 Vdc.

  4. What is the collector-emitter saturation voltage (VCE(sat)) of the 2N6042G?

    The collector-emitter saturation voltage (VCE(sat)) of the 2N6042G is 2.0 Vdc at IC = 3.0 Adc and IB = 12 mAdc.

  5. Is the 2N6042G transistor Pb-Free and RoHS compliant?

    Yes, the 2N6042G transistor is Pb-Free and RoHS compliant.

  6. What are the ESD ratings for the 2N6042G transistor?

    The 2N6042G transistor has ESD ratings of Human Body Model > 8000 V and Machine Model > 400 V.

  7. What is the operating temperature range for the 2N6042G transistor?

    The operating and storage junction temperature range for the 2N6042G transistor is –65 to +150 °C.

  8. What is the total power dissipation of the 2N6042G transistor at TC = 25°C?

    The total power dissipation (PD) of the 2N6042G transistor at TC = 25°C is 75 W.

  9. What are some common applications of the 2N6042G transistor?

    The 2N6042G transistor is commonly used in general-purpose amplifiers, low-speed switching applications, power management circuits, and automotive and industrial control systems.

  10. What package type is the 2N6042G transistor available in?

    The 2N6042G transistor is available in the TO-220 package type.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2V @ 12mA, 3A
Current - Collector Cutoff (Max):20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 4V
Power - Max:75 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number 2N6042G 2N6045G 2N6052G 2N6043G 2N6040G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Active Obsolete
Transistor Type PNP - Darlington NPN - Darlington PNP - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 8 A 8 A 12 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A 2V @ 12mA, 3A 3V @ 120mA, 12A 2V @ 16mA, 4A 2V @ 16mA, 4A
Current - Collector Cutoff (Max) 20µA 20µA 1mA 20µA 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 4V 1000 @ 3A, 4V 750 @ 6A, 3V 1000 @ 4A, 4V 1000 @ 4A, 4V
Power - Max 75 W 75 W 150 W 75 W 75 W
Frequency - Transition - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-204AA, TO-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-204 (TO-3) TO-220 TO-220

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