2N5088G
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onsemi 2N5088G

Manufacturer No:
2N5088G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 30V 0.05A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5088G is an NPN bipolar junction transistor (BJT) manufactured by onsemi. It is designed for low-level, low-noise amplifier applications and is widely used in general-purpose switching and amplification tasks. The transistor is housed in a TO-92 package, making it suitable for a variety of electronic circuits. It is known for its high gain and low noise characteristics, which are essential for applications such as audio preamplifiers, audio amplifiers, and sensor circuits.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Package Type TO-92
Collector-Emitter Voltage (VCEO) 30 Vdc
Collector-Base Voltage (VCBO) 35 Vdc
Emitter-Base Voltage (VEBO) 3.0 Vdc
Continuous Collector Current (IC) 50 mA
Power Dissipation (PD) 625 mW
Operating and Junction Temperature -55 to +150 °C
DC Current Gain (hFE) 300 - 900
Transition Frequency (fT) 50 MHz
Collector-Emitter Saturation Voltage (VCE(SAT)) 0.5 V @ IB=1mA, IC=10mA

Key Features

  • Low Noise: Designed for low noise amplifier applications, making it suitable for audio and other sensitive signal amplification tasks.
  • High Gain: Offers a high DC current gain (hFE) ranging from 300 to 900, which is beneficial for amplifying low-level signals.
  • General Purpose Switching: Can be used as a switch to drive loads up to 100mA continuously and 200mA in peak mode.
  • Wide Operating Temperature Range: Operates within a junction temperature range of -55°C to +150°C.
  • Pb-Free Package: Available in lead-free packages, making it compliant with RoHS standards.

Applications

  • Audio Preamplifiers and Amplifiers: Ideal for low noise stages in audio equipment.
  • Switching Loads: Can drive loads under 100mA, making it suitable for various switching applications.
  • Microphone Amplifiers: Used in mic amplifier circuits due to its low noise and high gain characteristics.
  • Sensor Circuits: Suitable for use in sensor circuits where low noise and high sensitivity are required.
  • Darlington Pairs: Can be used in Darlington configurations to further increase the current gain.

Q & A

  1. What is the 2N5088G transistor used for?

    The 2N5088G is used for low-level, low-noise amplifier applications and general-purpose switching tasks.

  2. What is the package type of the 2N5088G transistor?

    The 2N5088G transistor is housed in a TO-92 package.

  3. What is the maximum collector-emitter voltage of the 2N5088G transistor?

    The maximum collector-emitter voltage (VCEO) is 30 Vdc.

  4. What is the continuous collector current rating of the 2N5088G transistor?

    The continuous collector current (IC) is 50 mA.

  5. What is the operating temperature range of the 2N5088G transistor?

    The operating and junction temperature range is -55°C to +150°C.

  6. What is the DC current gain (hFE) of the 2N5088G transistor?

    The DC current gain (hFE) ranges from 300 to 900.

  7. Can the 2N5088G transistor be used as a switch?

    Yes, it can be used as a switch to drive loads up to 100mA continuously and 200mA in peak mode.

  8. What are some common applications of the 2N5088G transistor?

    Common applications include audio preamplifiers, microphone amplifiers, sensor circuits, and Darlington pairs.

  9. Is the 2N5088G transistor Pb-free?

    Yes, the 2N5088G transistor is available in Pb-free packages.

  10. What is the transition frequency (fT) of the 2N5088G transistor?

    The transition frequency (fT) is 50 MHz.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):50 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 100µA, 5V
Power - Max:625 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92 (TO-226)
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Similar Products

Part Number 2N5088G 2N5089G 2N5038G 2N5087G 2N5088
Manufacturer onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete Active Obsolete Obsolete
Transistor Type NPN NPN NPN PNP NPN
Current - Collector (Ic) (Max) 50 mA 50 mA 20 A 50 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 25 V 90 V 50 V 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA 500mV @ 1mA, 10mA 2.5V @ 5A, 20A 300mV @ 1mA, 10mA 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO) - 50nA (ICBO) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100µA, 5V 400 @ 100µA, 5V 20 @ 12A, 5V 250 @ 100µA, 5V 350 @ 1mA, 5V
Power - Max 625 mW 625 mW 140 W 625 mW 625 mW
Frequency - Transition 50MHz 50MHz - 40MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 200°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 Long Body TO-204AA, TO-3 TO-226-3, TO-92-3 Long Body TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 (TO-226) TO-92 (TO-226) TO-204 (TO-3) TO-92 (TO-226) TO-92-3

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