15C01M-TL-E
  • Share:

onsemi 15C01M-TL-E

Manufacturer No:
15C01M-TL-E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 15V 700MA 3MCP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 15C01M-TL-E is a bipolar NPN transistor produced by onsemi, designed for low-power surface mount applications. It is housed in the SC-70 (SOT-363) package, which facilitates miniaturization in end products. This transistor is characterized by its large current capacity, low collector-to-emitter saturation voltage, and small ON-resistance, making it suitable for various general-purpose amplifier applications.

Key Specifications

ParameterConditionsRatingsUnit
Collector-to-Base Voltage (VCBO)TA = 25°C20V
Collector-to-Emitter Voltage (VCEO)TA = 25°C15V
Emitter-to-Base Voltage (VEBO)TA = 25°C5V
Collector Current (IC)TA = 25°C700 mAmA
Pulse Collector Current (ICP)TA = 25°C1.4 AA
Collector Dissipation (PC)Mounted on glass epoxy board (20 x 30 x 1.6 mm)300 mWmW
Junction Temperature (Tj)150 °C°C
Storage Temperature (Tstg)-55 to +150 °C°C
DC Current Gain (hFE)VCE = 2 V, IC = 10 mA300 - 800
Collector-to-Emitter Saturation Voltage (VCE(sat))IC = 200 mA, IB = 10 mA150 - 300 mVmV
Base-to-Emitter Saturation Voltage (VBE(sat))IC = 200 mA, IB = 10 mA0.9 - 1.2 VV

Key Features

  • Large current capacity: Up to 700 mA collector current.
  • Low collector-to-emitter saturation voltage: Typically 0.58 Ω at IC = 0.7 A and IB = 35 mA.
  • Ultrasmall package: SC-70 (SOT-363) package facilitates miniaturization in end products.
  • Small ON-resistance (Ron).
  • Pb-free and halide-free.

Applications

  • Low-frequency amplifiers.
  • Muting circuits.
  • General-purpose amplifier applications.

Q & A

  1. What is the maximum collector current of the 15C01M-TL-E transistor? The maximum collector current is 700 mA.
  2. What is the typical collector-to-emitter saturation voltage of the 15C01M-TL-E transistor? The typical collector-to-emitter saturation voltage is 150 - 300 mV at IC = 200 mA and IB = 10 mA.
  3. What package type is the 15C01M-TL-E transistor housed in? The transistor is housed in the SC-70 (SOT-363) package.
  4. Is the 15C01M-TL-E transistor Pb-free and halide-free? Yes, the transistor is Pb-free and halide-free.
  5. What is the maximum junction temperature for the 15C01M-TL-E transistor? The maximum junction temperature is 150 °C.
  6. What are some typical applications of the 15C01M-TL-E transistor? Typical applications include low-frequency amplifiers and muting circuits.
  7. What is the collector dissipation of the 15C01M-TL-E transistor when mounted on a glass epoxy board? The collector dissipation is 300 mW when mounted on a glass epoxy board (20 x 30 x 1.6 mm).
  8. What is the DC current gain (hFE) of the 15C01M-TL-E transistor? The DC current gain (hFE) is 300 - 800 at VCE = 2 V and IC = 10 mA.
  9. What is the storage temperature range for the 15C01M-TL-E transistor? The storage temperature range is -55 to +150 °C.
  10. Is the 15C01M-TL-E transistor suitable for high-frequency applications? No, it is primarily designed for low-frequency applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):700 mA
Voltage - Collector Emitter Breakdown (Max):15 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 200mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Power - Max:300 mW
Frequency - Transition:330MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70 / MCP3
0 Remaining View Similar

In Stock

$0.42
803

Please send RFQ , we will respond immediately.

Related Product By Categories

BUL128D-B
BUL128D-B
STMicroelectronics
TRANS NPN 400V 4A TO220
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BC858B-QR
BC858B-QR
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK