Overview
The PSMN6R1-30YLD115 is an N-channel power MOSFET produced by NXP USA Inc., utilizing the advanced NextPowerS3 technology. This MOSFET is designed for high-efficiency and high-performance applications, particularly in environments requiring low on-resistance and fast switching times.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PSMN6R1-30YLD115 |
| Channel Type | N-channel |
| Drain-Source Voltage (Vdss) | 30 V |
| On-Resistance (Rds(on)) | 6.1 mΩ |
| Package | LFPAK56 |
| Continuous Drain Current (Id) @ 25°C | Dependent on thermal conditions, typically up to 100 A |
| Gate Threshold Voltage (Vgs(th)) | Typically 1-2 V |
| Gate Charge (Qg) | Ultra low QG, QGD, and QOSS for high system efficiency |
Key Features
- Ultra low gate charge (QG), gate-drain charge (QGD), and output charge (QOSS) for high system efficiency, especially at higher switching frequencies.
- Superfast switching with soft-recovery behavior, reducing switching losses and improving overall system performance.
- Low on-resistance (Rds(on)) of 6.1 mΩ, enhancing efficiency and reducing heat generation.
- NextPowerS3 technology ensures high reliability and robustness in various applications.
- LFPAK56 package, offering a compact and thermally efficient design.
Applications
The PSMN6R1-30YLD115 is suitable for a wide range of high-performance applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Automotive systems, such as battery management and power steering.
- Industrial power systems, including inverters and switch-mode power supplies.
- Consumer electronics requiring high-efficiency power management.
Q & A
- What is the drain-source voltage rating of the PSMN6R1-30YLD115?
The drain-source voltage (Vdss) is rated at 30 V. - What is the on-resistance (Rds(on)) of this MOSFET?
The on-resistance (Rds(on)) is 6.1 mΩ. - What package type is used for the PSMN6R1-30YLD115?
The MOSFET is packaged in LFPAK56. - What are the key benefits of the NextPowerS3 technology used in this MOSFET?
The NextPowerS3 technology offers ultra low gate charge, superfast switching, and soft-recovery behavior, enhancing system efficiency and reducing switching losses. - What are some typical applications for the PSMN6R1-30YLD115?
Typical applications include power supplies, motor control systems, automotive systems, industrial power systems, and consumer electronics requiring high-efficiency power management. - What is the continuous drain current rating for this MOSFET?
The continuous drain current (Id) is dependent on thermal conditions but typically up to 100 A. - Is the PSMN6R1-30YLD115 suitable for high-frequency switching applications?
Yes, it is highly suitable due to its ultra low gate charge and superfast switching capabilities. - What is the gate threshold voltage (Vgs(th)) for this MOSFET?
The gate threshold voltage (Vgs(th)) is typically between 1-2 V. - How does the LFPAK56 package benefit the performance of the MOSFET?
The LFPAK56 package offers a compact and thermally efficient design, enhancing heat dissipation and overall performance. - Is the PSMN6R1-30YLD115 RoHS compliant?
Yes, the MOSFET is RoHS compliant.
