PMV31XN,215
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NXP USA Inc. PMV31XN,215

Manufacturer No:
PMV31XN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMV31XN,215 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia (formerly part of NXP USA Inc.). It is designed in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package, utilizing TrenchMOS technology. This MOSFET is known for its high efficiency and reliability, making it suitable for a variety of applications requiring low power consumption and high performance.

Key Specifications

ParameterValue
TypeN-channel enhancement mode FET
PackageSOT23 (TO-236AB)
Drain-Source Voltage (Vds)20 V
Continuous Drain Current (Id)5.9 A
On-State Resistance (Rds(on))Typically 15 mΩ at Vgs = 4.5 V
Gate-Source Threshold Voltage (Vgs(th))Typically 1.5 V
Operating Temperature Range-55°C to 150°C

Key Features

  • TrenchMOS technology for low on-state resistance and high efficiency.
  • Small SOT23 package, ideal for space-constrained designs.
  • Low thermal resistance, enhancing heat dissipation.
  • High current capability and low power losses.
  • Enhanced reliability and durability.

Applications

  • Power management in portable electronics and battery-powered devices.
  • DC-DC converters and switching power supplies.
  • Motor control and drive circuits.
  • Audio amplifiers and other high-frequency applications.
  • General-purpose switching and power amplification.

Q & A

  1. What is the PMV31XN,215 MOSFET used for? The PMV31XN,215 is used in various applications requiring low power consumption and high performance, such as power management, DC-DC converters, motor control, and audio amplifiers.
  2. What is the maximum drain-source voltage of the PMV31XN,215? The maximum drain-source voltage (Vds) is 20 V.
  3. What is the continuous drain current of the PMV31XN,215? The continuous drain current (Id) is 5.9 A.
  4. What package type does the PMV31XN,215 come in? The PMV31XN,215 comes in a SOT23 (TO-236AB) package.
  5. What is the typical on-state resistance of the PMV31XN,215? The typical on-state resistance (Rds(on)) is 15 mΩ at Vgs = 4.5 V.
  6. What is the operating temperature range of the PMV31XN,215? The operating temperature range is -55°C to 150°C.
  7. What technology is used in the PMV31XN,215? The PMV31XN,215 uses TrenchMOS technology.
  8. Is the PMV31XN,215 suitable for high-frequency applications? Yes, the PMV31XN,215 is suitable for high-frequency applications due to its low on-state resistance and high efficiency.
  9. Where can I find detailed specifications for the PMV31XN,215? Detailed specifications can be found on the Nexperia website or through distributors like Digi-Key and Mouser.
  10. What are some common applications of the PMV31XN,215 in power management? Common applications include DC-DC converters, switching power supplies, and general-purpose switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV31XN,215 PMV30XN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V 35mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V 7.4 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 20 V 420 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 280mW (Tj) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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