PMV31XN,215
  • Share:

NXP USA Inc. PMV31XN,215

Manufacturer No:
PMV31XN,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV31XN,215 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia (formerly part of NXP USA Inc.). It is designed in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package, utilizing TrenchMOS technology. This MOSFET is known for its high efficiency and reliability, making it suitable for a variety of applications requiring low power consumption and high performance.

Key Specifications

ParameterValue
TypeN-channel enhancement mode FET
PackageSOT23 (TO-236AB)
Drain-Source Voltage (Vds)20 V
Continuous Drain Current (Id)5.9 A
On-State Resistance (Rds(on))Typically 15 mΩ at Vgs = 4.5 V
Gate-Source Threshold Voltage (Vgs(th))Typically 1.5 V
Operating Temperature Range-55°C to 150°C

Key Features

  • TrenchMOS technology for low on-state resistance and high efficiency.
  • Small SOT23 package, ideal for space-constrained designs.
  • Low thermal resistance, enhancing heat dissipation.
  • High current capability and low power losses.
  • Enhanced reliability and durability.

Applications

  • Power management in portable electronics and battery-powered devices.
  • DC-DC converters and switching power supplies.
  • Motor control and drive circuits.
  • Audio amplifiers and other high-frequency applications.
  • General-purpose switching and power amplification.

Q & A

  1. What is the PMV31XN,215 MOSFET used for? The PMV31XN,215 is used in various applications requiring low power consumption and high performance, such as power management, DC-DC converters, motor control, and audio amplifiers.
  2. What is the maximum drain-source voltage of the PMV31XN,215? The maximum drain-source voltage (Vds) is 20 V.
  3. What is the continuous drain current of the PMV31XN,215? The continuous drain current (Id) is 5.9 A.
  4. What package type does the PMV31XN,215 come in? The PMV31XN,215 comes in a SOT23 (TO-236AB) package.
  5. What is the typical on-state resistance of the PMV31XN,215? The typical on-state resistance (Rds(on)) is 15 mΩ at Vgs = 4.5 V.
  6. What is the operating temperature range of the PMV31XN,215? The operating temperature range is -55°C to 150°C.
  7. What technology is used in the PMV31XN,215? The PMV31XN,215 uses TrenchMOS technology.
  8. Is the PMV31XN,215 suitable for high-frequency applications? Yes, the PMV31XN,215 is suitable for high-frequency applications due to its low on-state resistance and high efficiency.
  9. Where can I find detailed specifications for the PMV31XN,215? Detailed specifications can be found on the Nexperia website or through distributors like Digi-Key and Mouser.
  10. What are some common applications of the PMV31XN,215 in power management? Common applications include DC-DC converters, switching power supplies, and general-purpose switching.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.14
1,113

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number PMV31XN,215 PMV30XN,215
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 1.5A, 4.5V 35mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V 7.4 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 20 V 420 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 280mW (Tj) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

BAP50-03,115
BAP50-03,115
NXP USA Inc.
RF DIODE PIN 50V 500MW SOD323
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
MIMX8MQ6DVAJZAA,557
MIMX8MQ6DVAJZAA,557
NXP USA Inc.
I.MX 8M: ARM CORTEX A53 QUAD COR
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
NX5P3001UKZ
NX5P3001UKZ
NXP USA Inc.
IC PWR SWITCH N-CHAN 1:1 12WLCSP
PCA9420UKZ
PCA9420UKZ
NXP USA Inc.
POWER MANAGEMENT IC FOR LOW-POWE
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-