Overview
The PMCM4401VPE is a 12 V, P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia (previously part of NXP USA Inc.). This device utilizes Trench MOSFET technology and is packaged in a 4 bumps Wafer Level Chip-Size Package (WLCSP). The PMCM4401VPE is designed for high-performance applications requiring low on-state resistance and high switching speeds.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (drain-source voltage) | - | - | -12 | V | |
| VGS (gate-source voltage) | Tj = 25 °C | -8 | - | 8 | V |
| ID (drain current) | VGS = -4.5 V; Tamb = 25 °C | - | - | -3.9 | A |
| ID (drain current) | VGS = -4.5 V; Tamb = 100 °C | - | - | -2.5 | A |
| IDM (peak drain current) | Tamb = 25 °C; single pulse; tp ≤ 10 µs | - | - | -16 | A |
| Ptot (total power dissipation) | Tsp = 25 °C | - | - | 12500 | mW |
| Tj (junction temperature) | - | -55 | - | 150 | °C |
| Tamb (ambient temperature) | - | -55 | - | 150 | °C |
| Tstg (storage temperature) | - | -65 | - | 150 | °C |
| V(BR)DSS (drain-source breakdown voltage) | ID = -250 µA; VGS = 0 V; Tj = 25 °C | -12 | - | - | V |
| VGSth (gate-source threshold voltage) | ID = -250 µA; VDS = VGS; Tj = 25 °C | -0.4 | -0.6 | -0.9 | V |
Key Features
- Trench MOSFET Technology: Offers low on-state resistance and high switching speeds.
- Wafer Level Chip-Size Package (WLCSP): Compact 4 bumps package, ideal for space-constrained applications.
- High Drain Current: Capable of handling up to -3.9 A at 25 °C and -2.5 A at 100 °C.
- Low Threshold Voltage: Gate-source threshold voltage ranges from -0.4 V to -0.9 V.
- High Junction Temperature: Operates within a junction temperature range of -55 °C to 150 °C.
Applications
- Power Management: Suitable for power switching and power management in various electronic devices.
- Consumer Electronics: Used in smartphones, tablets, and other portable electronic devices.
- Automotive Systems: Can be used in automotive applications such as battery management and power distribution, though within specified limits and warranties.
- Industrial Control: Applicable in industrial control systems requiring high reliability and efficiency.
Q & A
- What is the PMCM4401VPE?
The PMCM4401VPE is a 12 V, P-channel enhancement mode Field-Effect Transistor (FET) in a WLCSP package.
- What technology does the PMCM4401VPE use?
The PMCM4401VPE uses Trench MOSFET technology.
- What is the maximum drain current of the PMCM4401VPE at 25 °C?
The maximum drain current is -3.9 A at 25 °C.
- What is the gate-source threshold voltage range of the PMCM4401VPE?
The gate-source threshold voltage ranges from -0.4 V to -0.9 V.
- What is the junction temperature range of the PMCM4401VPE?
The junction temperature range is from -55 °C to 150 °C.
- What package type does the PMCM4401VPE use?
The PMCM4401VPE uses a Wafer Level Chip-Size Package (WLCSP) with 4 bumps.
- What are some common applications of the PMCM4401VPE?
Common applications include power management, consumer electronics, automotive systems, and industrial control.
- What is the maximum total power dissipation of the PMCM4401VPE?
The maximum total power dissipation is 12500 mW.
- Can the PMCM4401VPE be used in automotive applications?
Yes, but within specified limits and warranties. It is important to refer to the manufacturer's guidelines for automotive use.
- What is the storage temperature range for the PMCM4401VPE?
The storage temperature range is from -65 °C to 150 °C.
