NX7002BK215
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NXP USA Inc. NX7002BK215

Manufacturer No:
NX7002BK215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The NX7002BK215 is a small signal N-channel MOSFET produced by NXP USA Inc. This component is part of NXP's extensive range of MOSFETs designed to meet various application needs, particularly in scenarios requiring low power consumption and high efficiency.

Key Specifications

ParameterValue
Type numberNX7002BK215
Channel typeN-channel
VDS [max]60 V
RDSon [max] @ VGS = 10 VTypically around 2.5 Ω (varies based on specific conditions)
Tj [max]150 °C
ID [max]350 mA
VGSth [typ]Around 1.5 V (varies based on specific conditions)
Package nameSOT-23, SOT-323, or similar small outline packages

Key Features

  • Low On-Resistance: The NX7002BK215 offers a low RDSon, which minimizes power losses and enhances efficiency in various applications.
  • High Voltage Rating: With a maximum drain-source voltage (VDS) of 60 V, this MOSFET is suitable for a wide range of applications requiring high voltage handling.
  • Small Signal Capability: Designed for small signal applications, this MOSFET is ideal for use in circuits where low power and high switching speeds are required.
  • Compact Packaging: Available in small outline packages such as SOT-23 and SOT-323, making it suitable for space-constrained designs.

Applications

  • Consumer Electronics: Used in various consumer electronic devices such as smartphones, tablets, and laptops for power management and switching applications.
  • Industrial Automation: Suitable for industrial control systems, motor control, and power supply circuits.
  • Automotive Systems: Can be used in automotive applications requiring low power consumption and high reliability.
  • IoT Devices: Ideal for Internet of Things (IoT) devices that require efficient power management and compact design.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX7002BK215?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the maximum continuous drain current (ID) of this MOSFET?
    The maximum continuous drain current (ID) is 350 mA.
  3. What type of package is the NX7002BK215 available in?
    The NX7002BK215 is available in small outline packages such as SOT-23 and SOT-323.
  4. Is the NX7002BK215 suitable for high-power applications?
    No, it is designed for small signal applications and is not suitable for high-power applications.
  5. What is the typical threshold voltage (VGSth) of the NX7002BK215?
    The typical threshold voltage (VGSth) is around 1.5 V.
  6. Is the NX7002BK215 RoHS compliant?
    Yes, the NX7002BK215 is RoHS compliant.
  7. What are some common applications of the NX7002BK215?
    Common applications include consumer electronics, industrial automation, automotive systems, and IoT devices.
  8. How does the NX7002BK215 contribute to energy efficiency in devices?
    The NX7002BK215 contributes to energy efficiency through its low on-resistance and low power consumption characteristics.
  9. Can the NX7002BK215 be used in high-temperature environments?
    The maximum junction temperature (Tj) is 150 °C, making it suitable for various temperature ranges.
  10. Where can I find detailed specifications and datasheets for the NX7002BK215?
    Detailed specifications and datasheets can be found on the NXP website or through authorized distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
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Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
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Supplier Device Package:- 
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