MRFE6VP5150NR1
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NXP USA Inc. MRFE6VP5150NR1

Manufacturer No:
MRFE6VP5150NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF MOSFET LDMOS DL 50V TO270
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP5150NR1 is a wideband RF power LDMOS transistor manufactured by NXP USA Inc. This component is designed for high-power RF applications, offering a robust and reliable solution for various communication systems. It operates within a frequency range of 1.8 to 600 MHz, making it versatile for different RF power amplification needs.

Key Specifications

ParameterValue
Voltage Rating50 V
Current Rating100 mA
Frequency Range1.8 - 600 MHz
Power Output150 W CW
Gain26.1 dB
Package TypeTO-270 WB-4

Key Features

  • High power output of 150 W CW, suitable for high-power RF amplification.
  • Wide frequency range of 1.8 to 600 MHz, making it versatile for various RF applications.
  • High gain of 26.1 dB, enhancing signal strength and quality.
  • Robust LDMOS technology for reliable and efficient operation.
  • TO-270 WB-4 package, providing good thermal management and ease of integration.

Applications

  • RF power amplifiers in communication systems such as base stations, repeaters, and transmitters.
  • Industrial, scientific, and medical (ISM) equipment.
  • Broadcasting and broadcasting equipment.
  • Military and aerospace communication systems.
  • Other high-power RF applications requiring reliability and efficiency.

Q & A

  1. What is the voltage rating of the MRFE6VP5150NR1? The voltage rating is 50 V.
  2. What is the current rating of the MRFE6VP5150NR1? The current rating is 100 mA.
  3. What is the frequency range of the MRFE6VP5150NR1? The frequency range is 1.8 to 600 MHz.
  4. What is the power output of the MRFE6VP5150NR1? The power output is 150 W CW.
  5. What is the gain of the MRFE6VP5150NR1? The gain is 26.1 dB.
  6. What package type does the MRFE6VP5150NR1 use? The package type is TO-270 WB-4.
  7. What technology is used in the MRFE6VP5150NR1? The MRFE6VP5150NR1 uses LDMOS technology.
  8. What are some common applications of the MRFE6VP5150NR1? Common applications include RF power amplifiers in communication systems, ISM equipment, broadcasting equipment, and military communication systems.
  9. Where can I find detailed specifications for the MRFE6VP5150NR1? Detailed specifications can be found on the datasheet available from NXP USA Inc. and distributors like Digi-Key and Mouser Electronics.
  10. Is the MRFE6VP5150NR1 suitable for high-power RF amplification? Yes, it is specifically designed for high-power RF amplification.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:230MHz
Gain:26.1dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:150W
Voltage - Rated:133 V
Package / Case:TO-270AB
Supplier Device Package:TO-270 WB-4
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Same Series
MRFE6VP5150GNR1
MRFE6VP5150GNR1
FET RF 2CH 133V 230MHZ TO-270 GW

Similar Products

Part Number MRFE6VP5150NR1 MRFE6VP5150GNR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 230MHz 230MHz
Gain 26.1dB 26.1dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 150W 150W
Voltage - Rated 133 V 133 V
Package / Case TO-270AB TO-270BB
Supplier Device Package TO-270 WB-4 TO-270 WB-4 Gull

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