MRFE6VP5150NR1
  • Share:

NXP USA Inc. MRFE6VP5150NR1

Manufacturer No:
MRFE6VP5150NR1
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
RF MOSFET LDMOS DL 50V TO270
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRFE6VP5150NR1 is a wideband RF power LDMOS transistor manufactured by NXP USA Inc. This component is designed for high-power RF applications, offering a robust and reliable solution for various communication systems. It operates within a frequency range of 1.8 to 600 MHz, making it versatile for different RF power amplification needs.

Key Specifications

ParameterValue
Voltage Rating50 V
Current Rating100 mA
Frequency Range1.8 - 600 MHz
Power Output150 W CW
Gain26.1 dB
Package TypeTO-270 WB-4

Key Features

  • High power output of 150 W CW, suitable for high-power RF amplification.
  • Wide frequency range of 1.8 to 600 MHz, making it versatile for various RF applications.
  • High gain of 26.1 dB, enhancing signal strength and quality.
  • Robust LDMOS technology for reliable and efficient operation.
  • TO-270 WB-4 package, providing good thermal management and ease of integration.

Applications

  • RF power amplifiers in communication systems such as base stations, repeaters, and transmitters.
  • Industrial, scientific, and medical (ISM) equipment.
  • Broadcasting and broadcasting equipment.
  • Military and aerospace communication systems.
  • Other high-power RF applications requiring reliability and efficiency.

Q & A

  1. What is the voltage rating of the MRFE6VP5150NR1? The voltage rating is 50 V.
  2. What is the current rating of the MRFE6VP5150NR1? The current rating is 100 mA.
  3. What is the frequency range of the MRFE6VP5150NR1? The frequency range is 1.8 to 600 MHz.
  4. What is the power output of the MRFE6VP5150NR1? The power output is 150 W CW.
  5. What is the gain of the MRFE6VP5150NR1? The gain is 26.1 dB.
  6. What package type does the MRFE6VP5150NR1 use? The package type is TO-270 WB-4.
  7. What technology is used in the MRFE6VP5150NR1? The MRFE6VP5150NR1 uses LDMOS technology.
  8. What are some common applications of the MRFE6VP5150NR1? Common applications include RF power amplifiers in communication systems, ISM equipment, broadcasting equipment, and military communication systems.
  9. Where can I find detailed specifications for the MRFE6VP5150NR1? Detailed specifications can be found on the datasheet available from NXP USA Inc. and distributors like Digi-Key and Mouser Electronics.
  10. Is the MRFE6VP5150NR1 suitable for high-power RF amplification? Yes, it is specifically designed for high-power RF amplification.

Product Attributes

Transistor Type:LDMOS (Dual)
Frequency:230MHz
Gain:26.1dB
Voltage - Test:50 V
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:100 mA
Power - Output:150W
Voltage - Rated:133 V
Package / Case:TO-270AB
Supplier Device Package:TO-270 WB-4
0 Remaining View Similar

In Stock

$41.94
5

Please send RFQ , we will respond immediately.

Same Series
MRFE6VP5150GNR1
MRFE6VP5150GNR1
FET RF 2CH 133V 230MHZ TO-270 GW

Similar Products

Part Number MRFE6VP5150NR1 MRFE6VP5150GNR1
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type LDMOS (Dual) LDMOS (Dual)
Frequency 230MHz 230MHz
Gain 26.1dB 26.1dB
Voltage - Test 50 V 50 V
Current Rating (Amps) - -
Noise Figure - -
Current - Test 100 mA 100 mA
Power - Output 150W 150W
Voltage - Rated 133 V 133 V
Package / Case TO-270AB TO-270BB
Supplier Device Package TO-270 WB-4 TO-270 WB-4 Gull

Related Product By Categories

AFT18H357-24NR6
AFT18H357-24NR6
Freescale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTO
PD57018TR-E
PD57018TR-E
STMicroelectronics
TRANSISTOR RF POWERSO-10
BLF184XRGJ
BLF184XRGJ
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214C
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BLF7G24LS-140,112
BLF7G24LS-140,112
Ampleon USA Inc.
RF MOSFET LDMOS 28V SOT502B
BLA6H0912-500,112
BLA6H0912-500,112
Ampleon USA Inc.
RF FET LDMOS 100V 17DB SOT634A
BF909WR,115
BF909WR,115
NXP USA Inc.
MOSFET N-CH 7V 40MA SOT343
BF861A,215
BF861A,215
NXP USA Inc.
JFET N-CH 25V 6.5MA SOT23
BSS83,235
BSS83,235
NXP USA Inc.
MOSFET N-CH 10V 50MA SOT143
PD84001
PD84001
STMicroelectronics
FET RF 18V 870MHZ
BLF7G24LS-140
BLF7G24LS-140
Ampleon USA Inc.
RF FET LDMOS 140W SOT502B
A2T18H455W23NR6
A2T18H455W23NR6
NXP USA Inc.
AIRFAST RF POWER LDMOS TRANSISTO

Related Product By Brand

BAS216,115
BAS216,115
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
LPC1114FHN33/202,5
LPC1114FHN33/202,5
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 32HVQFN
LPC5502JHI48QL
LPC5502JHI48QL
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48HVQFN
S912ZVL64F0VLFR
S912ZVL64F0VLFR
NXP USA Inc.
IC MCU 16BIT 64KB FLASH 48LQFP
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
SC16C754BIA68,518
SC16C754BIA68,518
NXP USA Inc.
IC UART QUAD W/FIFO 68-PLCC
74LVC1G126GW/AU125
74LVC1G126GW/AU125
NXP USA Inc.
BUS DRIVER, LVC/LCX/Z SERIES
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN