BUK9875-100A/C1115
  • Share:

NXP USA Inc. BUK9875-100A/C1115

Manufacturer No:
BUK9875-100A/C1115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9875-100A/C1115 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by NXP USA Inc., now part of Nexperia. This device is designed using TrenchMOS technology, which offers high efficiency and reliability. The BUK9875-100A/C1115 is packaged in a plastic surface-mounted SC-73 (SOT223) package, which provides an increased heatsink for better thermal performance.

This MOSFET is characterized by its low on-state resistance and high current handling capabilities, making it suitable for a variety of applications requiring high power and efficiency.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) Tj ≥ 25 °C; Tj ≤ 150 °C - - 100 V
VGS (Gate-Source Voltage) - -10 - 10 V
ID (Continuous Drain Current) Tsp = 25 °C; VGS = 5 V - - 7 A
ID (Continuous Drain Current at Tsp = 100 °C) VGS = 5 V - - 4 A
Ptot (Total Power Dissipation) Tsp = 25 °C - - 8 W
Tj (Junction Temperature) - -55 - 150 °C
RDSon (Drain-Source On-State Resistance at VGS = 10 V) - - - 72
VGS(th) (Gate-Source Threshold Voltage) ID = 1 mA; VDS = VGS; Tj = 25 °C - 1.5 - V

Key Features

  • TrenchMOS Technology: Offers low on-state resistance and high efficiency.
  • Logic Level Operation: Compatible with standard logic levels, making it easy to integrate into various circuits.
  • High Current Handling: Capable of handling up to 7 A of continuous drain current at 25 °C.
  • Low RDSon: On-state resistance as low as 72 mΩ at VGS = 10 V.
  • Wide Operating Temperature Range: From -55 °C to 150 °C, suitable for diverse environmental conditions.
  • SC-73 (SOT223) Package: Provides an increased heatsink for better thermal performance.

Applications

The BUK9875-100A/C1115 is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for use in automotive electronics due to its robustness and wide operating temperature range.
  • Industrial Power Systems: Used in power supplies, motor control, and other industrial power applications requiring high efficiency and reliability.
  • Consumer Electronics: Found in power management circuits of consumer electronics such as laptops, smartphones, and other portable devices.
  • Power Management: Ideal for DC-DC converters, battery management systems, and other power management solutions.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9875-100A/C1115?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 7 A.

  3. What is the typical gate-source threshold voltage (VGS(th))?

    The typical gate-source threshold voltage (VGS(th)) is 1.5 V.

  4. What is the maximum on-state resistance (RDSon) at VGS = 10 V?

    The maximum on-state resistance (RDSon) at VGS = 10 V is 72 mΩ.

  5. What is the operating temperature range of the BUK9875-100A/C1115?

    The operating temperature range is from -55 °C to 150 °C.

  6. What package type is used for the BUK9875-100A/C1115?

    The device is packaged in a plastic surface-mounted SC-73 (SOT223) package.

  7. Is the BUK9875-100A/C1115 automotive qualified?
  8. What is the total power dissipation (Ptot) at 25 °C?

    The total power dissipation (Ptot) at 25 °C is 8 W.

  9. What is the peak drain current (IDM)?

    The peak drain current (IDM) is 28 A for pulses ≤ 10 µs.

  10. What is the input capacitance (Ciss)?

    The input capacitance (Ciss) is typically 1270 pF.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
52

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BUK9875-100A/C1115 BUK9875-100A/CU115
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
FET Type - -
Technology - -
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type - -
Supplier Device Package - -
Package / Case - -

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3

Related Product By Brand

BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
AFT05MS031NR1
AFT05MS031NR1
NXP USA Inc.
FET RF 40V 520MHZ TO-270-2
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
LPC1763FBD100,551
LPC1763FBD100,551
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 100LQFP
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
74HCT14D/S400118
74HCT14D/S400118
NXP USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
74HC259N,652
74HC259N,652
NXP USA Inc.
IC ADDRESSABLE LATCH 8BIT 16DIP
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO