BUK9675-100A/C1J
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NXP USA Inc. BUK9675-100A/C1J

Manufacturer No:
BUK9675-100A/C1J
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH LFPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9675-100A/C1J is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by NXP USA Inc. (now part of Nexperia). This device is designed using TrenchMOS technology and is packaged in a plastic D2PAK (SOT404) envelope. It is AEC Q101 compliant, making it suitable for automotive and other critical applications. The BUK9675-100A/C1J is known for its low conduction losses due to its low on-state resistance, enhancing efficiency in power switching applications.

Key Specifications

Parameter Conditions Min Max Unit
VDS (Drain-Source Voltage) Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V
ID (Drain Current) VGS = 5 V; Tmb = 25 °C - - 23 A
Ptot (Total Power Dissipation) Tmb = 25 °C - - 98 W
RDSon (On-State Resistance) VGS = 10 V; ID = 10 A; Tj = 25 °C - 55 72 mΩ
RDSon (On-State Resistance) VGS = 5 V; ID = 10 A; Tj = 25 °C - - 75 mΩ
Tj (Junction Temperature) - -55 - 175 °C
VGS(th) (Gate-Source Threshold Voltage) ID = 1 mA; VDS = VGS; Tj = 25 °C - 1 2 V

Key Features

  • AEC Q101 compliant, suitable for automotive and critical applications.
  • Low conduction losses due to low on-state resistance (RDSon).
  • High drain current capability (up to 23 A).
  • High total power dissipation (up to 98 W).
  • Logic level gate drive, making it compatible with low voltage control signals.
  • Avalanche ruggedness with a single-pulse avalanche energy rating of 100 mJ.

Applications

  • Automotive power switching applications.
  • General purpose power switching.
  • Industrial power management systems.
  • Consumer electronics requiring high efficiency and reliability.

Q & A

  1. What is the BUK9675-100A/C1J?

    The BUK9675-100A/C1J is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by NXP USA Inc.

  2. What package type is the BUK9675-100A/C1J available in?

    The BUK9675-100A/C1J is available in a D2PAK (SOT404) package.

  3. What is the maximum drain-source voltage (VDS) of the BUK9675-100A/C1J?

    The maximum drain-source voltage (VDS) is 100 V.

  4. What is the maximum drain current (ID) of the BUK9675-100A/C1J?

    The maximum drain current (ID) is 23 A.

  5. Is the BUK9675-100A/C1J AEC Q101 compliant?

    Yes, the BUK9675-100A/C1J is AEC Q101 compliant, making it suitable for automotive and other critical applications.

  6. What is the on-state resistance (RDSon) of the BUK9675-100A/C1J?

    The on-state resistance (RDSon) is typically 55 mΩ at VGS = 10 V and 75 mΩ at VGS = 5 V.

  7. What is the junction temperature range of the BUK9675-100A/C1J?

    The junction temperature range is from -55 °C to 175 °C.

  8. What is the gate-source threshold voltage (VGS(th)) of the BUK9675-100A/C1J?

    The gate-source threshold voltage (VGS(th)) is typically between 1 V and 2 V.

  9. What are some common applications of the BUK9675-100A/C1J?

    Common applications include automotive power switching, general purpose power switching, and industrial power management systems.

  10. Does the BUK9675-100A/C1J have avalanche ruggedness?

    Yes, the BUK9675-100A/C1J has a single-pulse avalanche energy rating of 100 mJ.

  11. Where can I purchase the BUK9675-100A/C1J?

    The BUK9675-100A/C1J can be purchased from various distributors such as Mouser, Digi-Key, and directly from Nexperia.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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