Overview
The BFU550A235, produced by NXP USA Inc., is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 3-pin SOT23 package. This transistor is suitable for small signal to medium power applications up to 2 GHz, making it a versatile component for various RF applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCB (Collector-Base Voltage) | Open Emitter | - | - | 24 | V |
| VCE (Collector-Emitter Voltage) | Open Base | - | - | 12 | V |
| VEB (Emitter-Base Voltage) | Open Collector | - | - | 2 | V |
| IC (Collector Current) | - | - | 15 | 50 | mA |
| Ptot (Total Power Dissipation) | Tsp ≤ 87°C | - | - | 450 | mW |
| hFE (DC Current Gain) | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
| Cc (Collector Capacitance) | VCB = 8 V; f = 1 MHz | - | 0.74 | - | pF |
| fT (Transition Frequency) | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | 11 | - | GHz |
| NFmin (Minimum Noise Figure) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt | - | 0.6 | - | dB |
| Gp(max) (Maximum Power Gain) | IC = 15 mA; VCE = 8 V; f = 900 MHz | - | 18 | - | dB |
| PL(1dB) (Output Power at 1 dB Gain Compression) | IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900 MHz | - | 13.5 | - | dBm |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified, ensuring reliability in automotive applications
- Minimum noise figure (NFmin) of 0.6 dB at 900 MHz
- Maximum stable gain of 18 dB at 900 MHz
- 11 GHz fT silicon technology for high-speed applications
Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
- ISM band oscillators
Q & A
- What is the BFU550A235 transistor used for?
The BFU550A235 is used for high-speed, low-noise RF applications, including broadband amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators.
- What is the package type of the BFU550A235 transistor?
The BFU550A235 is packaged in a plastic, 3-pin SOT23 package.
- What is the maximum collector-base voltage of the BFU550A235?
The maximum collector-base voltage (VCB) is 24 V.
- What is the minimum noise figure (NFmin) of the BFU550A235 at 900 MHz?
The minimum noise figure (NFmin) is 0.6 dB at 900 MHz.
- What is the maximum stable gain of the BFU550A235 at 900 MHz?
The maximum stable gain is 18 dB at 900 MHz.
- Is the BFU550A235 AEC-Q101 qualified?
- What is the transition frequency (fT) of the BFU550A235?
The transition frequency (fT) is 11 GHz.
- What is the total power dissipation (Ptot) of the BFU550A235?
The total power dissipation (Ptot) is 450 mW at Tsp ≤ 87°C.
- What are the typical applications of the BFU550A235?
The BFU550A235 is typically used in broadband amplifiers, low noise amplifiers for ISM applications, and ISM band oscillators.
- Where can I find detailed specifications and datasheets for the BFU550A235?
Detailed specifications and datasheets can be found on the NXP Semiconductors website or through local NXP sales offices.
