BFU550A215
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NXP USA Inc. BFU550A215

Manufacturer No:
BFU550A215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NPN WIDEBAND SILICON RF TRANSIST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BFU550A is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 3-pin SOT23 package. This transistor is suitable for a wide range of RF applications, particularly those requiring low noise and high breakdown voltages.

Key Specifications

Parameter Conditions Min Typ Max Unit
VCB (Collector-Base Voltage) Open Emitter - - 24 V
VCE (Collector-Emitter Voltage) Shorted Base - - 24 V
VEB (Emitter-Base Voltage) Open Collector - - 2 V
IC (Collector Current) - - - 50 mA
Ptot (Total Power Dissipation) Tsp ≤ 87 °C - - 450 mW
hFE (DC Current Gain) IC = 15 mA; VCE = 8 V 60 95 200 -
fT (Transition Frequency) IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz
NFmin (Minimum Noise Figure) IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt - 0.7 - dB

Key Features

  • Low noise, high breakdown RF transistor
  • AEC-Q101 qualified for automotive applications
  • Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
  • Maximum stable gain of 21 dB at 900 MHz
  • 11 GHz fT silicon technology

Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
  • ISM band oscillators

Q & A

  1. What is the BFU550A transistor used for?

    The BFU550A is used for high-speed, low-noise RF applications, including broadband amplifiers and ISM band oscillators.

  2. What is the package type of the BFU550A?

    The BFU550A is packaged in a plastic, 3-pin SOT23 package.

  3. What is the maximum collector current of the BFU550A?

    The maximum collector current (IC) is 50 mA.

  4. What is the minimum noise figure of the BFU550A at 900 MHz?

    The minimum noise figure (NFmin) is 0.7 dB at 900 MHz.

  5. Is the BFU550A AEC-Q101 qualified?

    Yes, the BFU550A is AEC-Q101 qualified for automotive applications.

  6. What is the transition frequency (fT) of the BFU550A?

    The transition frequency (fT) is 11 GHz.

  7. What are the typical applications of the BFU550A?

    Typical applications include broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.

  8. What is the maximum total power dissipation of the BFU550A?

    The maximum total power dissipation (Ptot) is 450 mW.

  9. What is the thermal resistance from junction to solder point for the BFU550A?

    The thermal resistance from junction to solder point (Rth(j-sp)) is 140 K/W.

  10. What is the storage temperature range for the BFU550A?

    The storage temperature range (Tstg) is from -65 °C to +150 °C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BFU550A215 BFU550A235
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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