Overview
The BFU550A is an NPN silicon RF transistor designed for high-speed, low-noise applications. It is part of the BFU5 family of transistors and is packaged in a plastic, 3-pin SOT23 package. This transistor is suitable for a wide range of RF applications, particularly those requiring low noise and high breakdown voltages.
Key Specifications
Parameter | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|
VCB (Collector-Base Voltage) | Open Emitter | - | - | 24 | V |
VCE (Collector-Emitter Voltage) | Shorted Base | - | - | 24 | V |
VEB (Emitter-Base Voltage) | Open Collector | - | - | 2 | V |
IC (Collector Current) | - | - | - | 50 | mA |
Ptot (Total Power Dissipation) | Tsp ≤ 87 °C | - | - | 450 | mW |
hFE (DC Current Gain) | IC = 15 mA; VCE = 8 V | 60 | 95 | 200 | - |
fT (Transition Frequency) | IC = 25 mA; VCE = 8 V; f = 900 MHz | - | 11 | - | GHz |
NFmin (Minimum Noise Figure) | IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt | - | 0.7 | - | dB |
Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified for automotive applications
- Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
- Maximum stable gain of 21 dB at 900 MHz
- 11 GHz fT silicon technology
Applications
- Applications requiring high supply voltages and high breakdown voltages
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM (Industrial, Scientific, and Medical) applications
- ISM band oscillators
Q & A
- What is the BFU550A transistor used for?
The BFU550A is used for high-speed, low-noise RF applications, including broadband amplifiers and ISM band oscillators.
- What is the package type of the BFU550A?
The BFU550A is packaged in a plastic, 3-pin SOT23 package.
- What is the maximum collector current of the BFU550A?
The maximum collector current (IC) is 50 mA.
- What is the minimum noise figure of the BFU550A at 900 MHz?
The minimum noise figure (NFmin) is 0.7 dB at 900 MHz.
- Is the BFU550A AEC-Q101 qualified?
Yes, the BFU550A is AEC-Q101 qualified for automotive applications.
- What is the transition frequency (fT) of the BFU550A?
The transition frequency (fT) is 11 GHz.
- What are the typical applications of the BFU550A?
Typical applications include broadband amplifiers up to 2 GHz, low noise amplifiers for ISM applications, and ISM band oscillators.
- What is the maximum total power dissipation of the BFU550A?
The maximum total power dissipation (Ptot) is 450 mW.
- What is the thermal resistance from junction to solder point for the BFU550A?
The thermal resistance from junction to solder point (Rth(j-sp)) is 140 K/W.
- What is the storage temperature range for the BFU550A?
The storage temperature range (Tstg) is from -65 °C to +150 °C.