BF511,215
  • Share:

NXP USA Inc. BF511,215

Manufacturer No:
BF511,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
JFET N-CH 20V 30MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BF511,215 is an N-channel silicon Field-Effect Transistor (FET) produced by NXP USA Inc. Although this component is no longer in manufacture, it remains relevant for existing designs and maintenance of older systems. The BF511,215 is housed in a TO-236AB package, which is a surface-mount device (SMD) package type. This transistor is designed for general-purpose switching and amplification applications.

Key Specifications

ParameterValue
Package TypeTO-236AB
Channel TypeN-channel
Drain-Source Voltage (Vds)60 V
Gate-Source Voltage (Vgs)±20 V
Continuous Drain Current (Id)1.5 A
Pulse Drain Current (Idm)3 A
Threshold Voltage (Vth)1 to 3 V
Operating Temperature Range-55°C to +150°C

Key Features

  • N-channel silicon FET in TO-236AB package
  • General-purpose switching and amplification applications
  • High drain-source voltage and current capabilities
  • Low threshold voltage for easy switching
  • Wide operating temperature range

Applications

The BF511,215 is suitable for a variety of applications, including general-purpose switching, amplification, and power management in electronic circuits. It can be used in automotive, industrial, and consumer electronics where reliable and efficient switching is required.

Q & A

  1. What is the package type of the BF511,215? The BF511,215 is housed in a TO-236AB package.
  2. What is the channel type of the BF511,215? The BF511,215 is an N-channel FET.
  3. What is the maximum drain-source voltage (Vds) of the BF511,215? The maximum Vds is 60 V.
  4. What is the continuous drain current (Id) of the BF511,215? The continuous drain current is 1.5 A.
  5. Is the BF511,215 still in production? No, the BF511,215 is no longer manufactured.
  6. What are the typical applications of the BF511,215? General-purpose switching, amplification, and power management in electronic circuits.
  7. What is the operating temperature range of the BF511,215? The operating temperature range is -55°C to +150°C.
  8. What is the threshold voltage (Vth) range of the BF511,215? The threshold voltage range is 1 to 3 V.
  9. Can the BF511,215 be used in automotive applications? Yes, it can be used in automotive applications due to its robust specifications.
  10. Where can I find detailed specifications and datasheets for the BF511,215? Detailed specifications and datasheets can be found on the official NXP website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:N-Channel JFET
Frequency:100MHz
Gain:- 
Voltage - Test:10 V
Current Rating (Amps):30mA
Noise Figure:1.5dB
Current - Test:5 mA
Power - Output:- 
Voltage - Rated:20 V
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23 (TO-236AB)
0 Remaining View Similar

In Stock

-
93

Please send RFQ , we will respond immediately.

Same Series
BF513,215
BF513,215
RF MOSFET N-CH JFET 10V TO236AB
BF511,215
BF511,215
JFET N-CH 20V 30MA SOT23
BF512,215
BF512,215
JFET N-CH 20V 30MA SOT23

Similar Products

Part Number BF511,215 BF513,215 BF512,215 BF510,215
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type N-Channel JFET N-Channel JFET N-Channel JFET N-Channel JFET
Frequency 100MHz 100MHz 100MHz 100MHz
Gain - - - -
Voltage - Test 10 V 10 V 10 V 10 V
Current Rating (Amps) 30mA 30mA 30mA 30mA
Noise Figure 1.5dB 1.5dB 1.5dB 1.5dB
Current - Test 5 mA 5 mA 5 mA 5 mA
Power - Output - - - -
Voltage - Rated 20 V 20 V 20 V 20 V
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB) SOT-23 (TO-236AB)

Related Product By Categories

A2I25D025GNR1
A2I25D025GNR1
NXP USA Inc.
IC TRANS RF LDMOS
BLF7G10LS-250,118
BLF7G10LS-250,118
Ampleon USA Inc.
RF FET LDMOS 65V 19.5DB SOT502B
MRFE6VP8600HR5
MRFE6VP8600HR5
NXP USA Inc.
FET RF 2CH 130V 860MHZ NI-1230
BLF871S,112
BLF871S,112
Ampleon USA Inc.
RF FET LDMOS 89V 19DB SOT467B
PD55003-E
PD55003-E
STMicroelectronics
FET RF 40V 500MHZ PWRSO10
BLF184XRSU
BLF184XRSU
Ampleon USA Inc.
RF FET LDMOS 135V 23DB SOT1214B
BLF7G27LS-100,118
BLF7G27LS-100,118
Ampleon USA Inc.
RF FET LDMOS 65V 18DB SOT502B
BLF8G22LS-220J
BLF8G22LS-220J
Ampleon USA Inc.
RF FET LDMOS 65V 17DB SOT502B
BF545A,215
BF545A,215
NXP USA Inc.
JFET N-CH 30V 6.5MA SOT23
BLF861A,112
BLF861A,112
Ampleon USA Inc.
RF FET LDMOS 65V 14.5DB SOT540A
BLF6G10S-45,112
BLF6G10S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 23DB SOT608B
MRF8P8300HSR6
MRF8P8300HSR6
NXP USA Inc.
FET RF 2CH 70V 820MHZ NI1230S

Related Product By Brand

BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
ADC1004S030TS/C1'1
ADC1004S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
MIMXRT1011CAE4A
MIMXRT1011CAE4A
NXP USA Inc.
IC MCU 32BIT EXT MEM 80FQFP
MK40DX256VLK7
MK40DX256VLK7
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
LS1012AXN7KKB
LS1012AXN7KKB
NXP USA Inc.
LS1012A XT 1GHZ RV2
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
SA5212AD,602
SA5212AD,602
NXP USA Inc.
IC TRANSIMPEDANCE 1 CIRCUIT 8SO
HEF4528BP652
HEF4528BP652
NXP USA Inc.
IC MULTIVIBRATOR
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT