Overview
The A2I25H060NR1 is a high-performance RF LDMOS (Laterally Diffused Metal Oxide Semiconductor) wideband integrated power amplifier produced by NXP USA Inc. This component is designed to provide high power output and efficiency, making it suitable for various RF and microwave applications. It is part of NXP's portfolio of RF power amplifiers, known for their reliability and performance in demanding environments.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Drain-Source Voltage | Vds | - | - | 60 | V |
| Gate-Source Voltage | Vgs | - | - | 10 | V |
| Continuous Drain Current | Idq | - | - | 2.6 | A |
| Power Output | Pout | - | - | 25 | W |
| Frequency Range | f | - | - | 1000 | MHz |
| Efficiency | η | - | 50 | - | % |
Key Features
- High power output of up to 25 W
- Wide frequency range, suitable for various RF and microwave applications
- High efficiency, typically around 50%
- Robust and reliable design, suitable for demanding environments
- Integrated power amplifier, simplifying system design and reducing component count
Applications
The A2I25H060NR1 is designed for use in a variety of RF and microwave applications, including:
- Base stations and cellular infrastructure
- Industrial, scientific, and medical (ISM) equipment
- Radar systems
- Broadcasting and telecommunications equipment
- Aerospace and defense systems
Q & A
- What is the maximum drain-source voltage of the A2I25H060NR1?
The maximum drain-source voltage is 60 V. - What is the typical efficiency of the A2I25H060NR1?
The typical efficiency is around 50%. - What is the maximum power output of the A2I25H060NR1?
The maximum power output is up to 25 W. - What is the frequency range of the A2I25H060NR1?
The frequency range is up to 1000 MHz. - What type of semiconductor technology is used in the A2I25H060NR1?
The A2I25H060NR1 uses RF LDMOS technology. - Where can the A2I25H060NR1 be used?
It can be used in base stations, ISM equipment, radar systems, broadcasting and telecommunications equipment, and aerospace and defense systems. - What is the continuous drain current of the A2I25H060NR1?
The continuous drain current is up to 2.6 A. - Is the A2I25H060NR1 an integrated power amplifier?
Yes, it is an integrated power amplifier. - What is the gate-source voltage limit of the A2I25H060NR1?
The gate-source voltage should not exceed 10 V. - Where can I find detailed specifications for the A2I25H060NR1?
Detailed specifications can be found in the datasheet available on NXP's official website and other electronic component distributors like Digi-Key and Mouser.
