Overview
The A2I20H060NR1 is a high-power LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF MOSFET transistor manufactured by NXP USA Inc. This device is specifically designed for high-frequency applications, offering robust performance and reliability in various RF power amplification scenarios.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | A2I20H060NR1 |
| Manufacturer | NXP USA Inc. |
| Description | RF LDMOS Wideband Integrated Power Amplifiers |
| Transistor Type | LDMOS (Dual) |
| Package / Case | TO-270WBG-17 |
| Voltage - Rated | 65V |
| Power - Output | 10.5W (or similar, exact value may vary based on specific conditions) |
| Gain | 26.1dB (or similar, exact value may vary based on specific conditions) |
| Frequency | Up to 2.59GHz |
| Current Rating | 26mA (test current) |
Key Features
- High-power LDMOS technology for efficient RF power amplification.
- Wideband operation, suitable for various high-frequency applications.
- High gain and output power, ensuring robust signal amplification.
- Durable TO-270WBG-17 package for reliable performance in demanding environments.
- Rated voltage of 65V, supporting high-power operations.
Applications
The A2I20H060NR1 is ideal for a range of high-frequency applications, including but not limited to:
- RF power amplifiers in telecommunications and wireless communication systems.
- Industrial and medical equipment requiring high-power RF signals.
- Aerospace and defense systems where reliable high-frequency amplification is critical.
- Broadcasting and satellite communication systems.
Q & A
- What is the A2I20H060NR1?
The A2I20H060NR1 is a high-power LDMOS RF MOSFET transistor manufactured by NXP USA Inc. - What is the primary application of the A2I20H060NR1?
The primary application is in high-frequency RF power amplification. - What is the rated voltage of the A2I20H060NR1?
The rated voltage is 65V. - What is the output power of the A2I20H060NR1?
The output power is approximately 10.5W. - What is the gain of the A2I20H060NR1?
The gain is approximately 26.1dB. - What is the maximum frequency of operation for the A2I20H060NR1?
The maximum frequency of operation is up to 2.59GHz. - What package type does the A2I20H060NR1 use?
The package type is TO-270WBG-17. - What are some common applications of the A2I20H060NR1?
Common applications include RF power amplifiers in telecommunications, industrial and medical equipment, aerospace and defense systems, and broadcasting and satellite communication systems. - Where can I find detailed specifications for the A2I20H060NR1?
Detailed specifications can be found in the datasheet available on NXP's official website or through distributors like Digi-Key and Mouser Electronics. - Is the A2I20H060NR1 suitable for high-power operations?
Yes, it is designed for high-power operations with a rated voltage of 65V and an output power of approximately 10.5W.
