2N7002PS/ZL115
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NXP USA Inc. 2N7002PS/ZL115

Manufacturer No:
2N7002PS/ZL115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL SMALL SIGNAL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002PS/ZL115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia, a subsidiary of NXP. This MOSFET is housed in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package, making it ideal for space-constrained applications. It is designed for small signal switching and is well-suited for a variety of electronic circuits due to its high performance and reliability.

Key Specifications

ParameterConditionsMinTypMaxUnit
Drain-Source Voltage (VDS)---60V
Gate-Source Voltage (VGS)Tamb = 25 °C-20-20V
Drain Current (ID)VGS = 10 V; Tamb = 25 °C--320mA
Peak Drain Current (IDM)Tamb = 25 °C; single pulse; tp ≤ 10 µs--1.2A
Total Power Dissipation (Ptot)Tamb = 25 °C--420mW
Junction Temperature (Tj)---150°C
Ambient Temperature (Tamb)--55-150°C
Gate Threshold Voltage (VGS(th))ID = 250 µA; VDS=VGS; Tj = 25 °C1.11.752.4V
Drain-Source On-State Resistance (RDS(on))ID = 500 mA; VGS = 10 V--2Ω

Key Features

  • Dual N-channel enhancement mode Field-Effect Transistor (FET) in a SOT363 (SC-88) package.
  • Maximum drain-source voltage of 60 V and maximum continuous drain current of 320 mA.
  • Low on-state resistance (RDS(on)) of up to 2 Ω.
  • Gate threshold voltage range of 1.1 V to 2.4 V.
  • Maximum power dissipation of 420 mW at ambient temperature of 25 °C.
  • Operating temperature range from -55 °C to 150 °C.
  • Lead-free and RoHS compliant.

Applications

The 2N7002PS/ZL115 is suitable for various applications including small signal switching, general-purpose switching, and low-power DC-DC conversion. It is also used in battery management systems, motor control circuits, and other electronic devices where space is limited and high reliability is required.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002PS/ZL115?
    The maximum drain-source voltage is 60 V.
  2. What is the maximum continuous drain current of the 2N7002PS/ZL115?
    The maximum continuous drain current is 320 mA.
  3. What is the package type of the 2N7002PS/ZL115?
    The package type is SOT363 (SC-88).
  4. What is the operating temperature range of the 2N7002PS/ZL115?
    The operating temperature range is from -55 °C to 150 °C.
  5. Is the 2N7002PS/ZL115 RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  6. What is the typical gate charge at VGS for the 2N7002PS/ZL115?
    The typical gate charge is 0.6 nC at VGS = 2.5 V.
  7. What are the dimensions of the 2N7002PS/ZL115 package?
    The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
  8. What is the maximum power dissipation of the 2N7002PS/ZL115 at 25 °C?
    The maximum power dissipation is 420 mW.
  9. What is the gate threshold voltage range of the 2N7002PS/ZL115?
    The gate threshold voltage range is from 1.1 V to 2.4 V.
  10. What are some common applications of the 2N7002PS/ZL115?
    Common applications include small signal switching, general-purpose switching, battery management systems, and motor control circuits.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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