Overview
The PSMN4R8-100BSEJ is a standard level N-channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's 'NextPower Live' portfolio and is packaged in a D2PAK (SOT404) package, qualified to operate up to 175 °C. It is designed to complement the latest 'hot-swap' controllers, making it robust enough to withstand substantial inrush currents during turn-on while maintaining low conduction losses due to its very low RDS(on) characteristic. This MOSFET is particularly suitable for telecommunication systems based on a 48 V backplane or supply rail.
Key Specifications
| Parameter | Description |
|---|---|
| Type Number | PSMN4R8-100BSEJ |
| Package | D2PAK (SOT404) |
| Channel Type | N-channel |
| VDS [max] | 100 V |
| RDS(on) [max] @ VGS = 10 V | 4.8 mΩ |
| Tj [max] | 175 °C |
| ID [max] | 120 A |
| Ptot [max] | 405 W |
| QGD [typ] | 59 nC |
| QG(tot) [typ] @ VGS = 10 V | 196 nC |
| VGSth [typ] | 3 V |
| RoHS Status | Lead Free / RoHS Compliant |
Key Features
- Enhanced forward biased safe operating area for superior linear mode operation
- Very low RDS(on) for low conduction losses
- Robust enough to withstand substantial inrush currents during turn-on
- Ideal for hot-swap, load switch, and soft start applications
Applications
- Electronic fuse
- Hot swap
- Load switch
- Soft start
- Telecommunication systems based on a 48 V backplane or supply rail
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN4R8-100BSEJ MOSFET?
The maximum drain-source voltage (VDS) is 100 V.
- What is the package type of the PSMN4R8-100BSEJ MOSFET?
The package type is D2PAK (SOT404).
- What is the maximum drain current (ID) of the PSMN4R8-100BSEJ MOSFET?
The maximum drain current (ID) is 120 A.
- What is the typical threshold voltage (VGSth) of the PSMN4R8-100BSEJ MOSFET?
The typical threshold voltage (VGSth) is 3 V.
- Is the PSMN4R8-100BSEJ MOSFET RoHS compliant?
- What are some common applications of the PSMN4R8-100BSEJ MOSFET?
- What is the maximum junction temperature (Tj) of the PSMN4R8-100BSEJ MOSFET?
The maximum junction temperature (Tj) is 175 °C.
- What is the typical gate-drain charge (QGD) of the PSMN4R8-100BSEJ MOSFET?
The typical gate-drain charge (QGD) is 59 nC.
- What is the maximum total power dissipation (Ptot) of the PSMN4R8-100BSEJ MOSFET?
The maximum total power dissipation (Ptot) is 405 W.
- How does the PSMN4R8-100BSEJ MOSFET handle inrush currents during turn-on?
The PSMN4R8-100BSEJ MOSFET is robust enough to withstand substantial inrush currents during turn-on.
