PSMN012-100YS,115
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Nexperia USA Inc. PSMN012-100YS,115

Manufacturer No:
PSMN012-100YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 60A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN012-100YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of the Advanced TrenchMOS family, known for its low RDSon and low gate charge, which contribute to high efficiency in switching power converters. The MOSFET is packaged in the LFPAK56 (Power-SO8) surface mount package, offering improved mechanical and thermal characteristics. It is designed to handle high current and voltage requirements, making it suitable for a variety of power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)100 V
Continuous Drain Current (Id)60 A
On-Resistance (Rds(on))12 mΩ @ 10 V
Power Dissipation (Pd)130 W
Gate Threshold Voltage (Vgs(th))1-4 V @ 1 mA
Package TypeLFPAK56 (Power-SO8), Surface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)

Key Features

  • Advanced TrenchMOS technology for low RDSon and low gate charge.
  • High efficiency in switching power converters.
  • Improved mechanical and thermal characteristics.
  • High current handling capability (60 A continuous drain current).
  • Low on-resistance (12 mΩ @ 10 V).
  • Surface mount LFPAK56 (Power-SO8) package for compact design.

Applications

The PSMN012-100YS,115 MOSFET is suitable for various power management applications, including:

  • Switching power converters.
  • DC-DC converters.
  • Motor control systems.
  • Power supplies.
  • Automotive and industrial power systems.

Q & A

  1. What is the voltage rating of the PSMN012-100YS,115 MOSFET?
    The voltage rating (Vds) is 100 V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (Id) is 60 A.
  3. What is the on-resistance (Rds(on)) of this device?
    The on-resistance (Rds(on)) is 12 mΩ @ 10 V.
  4. What package type does the PSMN012-100YS,115 use?
    The package type is LFPAK56 (Power-SO8), which is a surface mount package.
  5. What is the moisture sensitivity level (MSL) of this component?
    The moisture sensitivity level (MSL) is 1 (Unlimited).
  6. What are the key benefits of the Advanced TrenchMOS technology used in this MOSFET?
    The key benefits include low RDSon and low gate charge, leading to high efficiency in switching power converters.
  7. What are some common applications for the PSMN012-100YS,115 MOSFET?
    Common applications include switching power converters, DC-DC converters, motor control systems, power supplies, and automotive and industrial power systems.
  8. How much power can this MOSFET dissipate?
    The power dissipation (Pd) is 130 W.
  9. What is the gate threshold voltage range for this MOSFET?
    The gate threshold voltage (Vgs(th)) range is 1-4 V @ 1 mA.
  10. Is the PSMN012-100YS,115 MOSFET RoHS compliant?
    Yes, the PSMN012-100YS,115 MOSFET is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PSMN012-100YS,115 PSMN016-100YS,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 16.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 50 V 2744 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 130W (Tc) 117W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669

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