PMV45EN2R
  • Share:

Nexperia USA Inc. PMV45EN2R

Manufacturer No:
PMV45EN2R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 4.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV45EN2R is an N-Channel TrenchMOS transistor manufactured by Nexperia USA Inc. This device is part of the TrenchMOS family, known for its high efficiency and reliability in various high-power applications. The PMV45EN2R is designed to offer a balance between low on-state resistance and high switching speeds, making it suitable for use in motor control, power inverters, and other high-power electronic systems.

Key Specifications

Parameter Value
FET Type N-Channel
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 4.1A (Ta), 5.1A (max)
Drain-Source On Resistance-Max (Rds On) 42mΩ @ 10V
Rated Power Dissipation 5000mW (Ta), 5W (Tc)
Gate Charge (Qg) 6.3nC
Gate-Source Voltage-Max (Vgss) 20V
Turn-on Delay Time 3ns
Turn-off Delay Time 11ns
Rise Time 12ns
Fall Time 2ns
Operating Temperature Range -55°C to +150°C
Gate Source Threshold 2V
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-State Resistance: The PMV45EN2R features a low Rds On of 42mΩ @ 10V, which reduces power losses and improves overall system efficiency.
  • High Switching Speeds: With turn-on and turn-off delay times of 3ns and 11ns respectively, this transistor is suitable for high-frequency applications.
  • High Current Handling: Capable of handling continuous drain currents up to 4.1A (Ta), making it suitable for high-power applications.
  • Compact Package: Available in the SOT-23 (SC-59, TO-236) package, which is ideal for space-constrained designs.
  • Wide Operating Temperature Range: Operates from -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications

  • Motor Control: The PMV45EN2R is well-suited for motor control applications due to its high current handling and low on-state resistance.
  • Power Inverters: Its high switching speeds and low power losses make it an excellent choice for power inverter applications.
  • High-Power Electronic Systems: Suitable for use in various high-power electronic systems where efficiency and reliability are critical.
  • Automotive and Industrial Systems: Can be used in automotive and industrial systems that require high-power switching capabilities.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMV45EN2R?

    The maximum drain to source voltage (Vdss) is 30V.

  2. What is the continuous drain current (ID) of the PMV45EN2R?

    The continuous drain current (ID) is 4.1A (Ta), with a maximum of 5.1A.

  3. What is the typical on-state resistance (Rds On) of the PMV45EN2R?

    The typical on-state resistance (Rds On) is 42mΩ @ 10V.

  4. What is the rated power dissipation of the PMV45EN2R?

    The rated power dissipation is 5000mW (Ta) and 5W (Tc).

  5. What is the gate charge (Qg) of the PMV45EN2R?

    The gate charge (Qg) is 6.3nC.

  6. What is the maximum gate-source voltage (Vgss) of the PMV45EN2R?

    The maximum gate-source voltage (Vgss) is 20V.

  7. What are the turn-on and turn-off delay times of the PMV45EN2R?

    The turn-on delay time is 3ns, and the turn-off delay time is 11ns.

  8. What is the operating temperature range of the PMV45EN2R?

    The operating temperature range is -55°C to +150°C.

  9. What package styles are available for the PMV45EN2R?

    The PMV45EN2R is available in SOT-23 (SC-59, TO-236) packages.

  10. Is the PMV45EN2R RoHS compliant?

    Yes, the PMV45EN2R is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:209 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):510mW (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.47
339

Please send RFQ , we will respond immediately.

Same Series
PMV45EN2VL
PMV45EN2VL
MOSFET N-CH 30V 5.1A TO236AB

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
BZX79-C18,133
BZX79-C18,133
Nexperia USA Inc.
DIODE ZENER 18V 400MW ALF2
BZX84-C12/DG/B3,23
BZX84-C12/DG/B3,23
Nexperia USA Inc.
DIODE ZENER 12.05V 250MW TO236AB
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC807-40HZ
BC807-40HZ
Nexperia USA Inc.
BC807-40H/SOT23/TO-236AB
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
BSH111,215
BSH111,215
Nexperia USA Inc.
MOSFET N-CH 55V 335MA TO236AB
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP