NX7002BKWX
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Nexperia USA Inc. NX7002BKWX

Manufacturer No:
NX7002BKWX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Nexperia NX7002BKWX is a high-performance N-channel Trench MOSFET designed for a variety of applications requiring efficient power management. This device is part of Nexperia’s extensive portfolio of MOSFETs, known for their reliability and advanced technology. The NX7002BKWX features a low on-resistance and fast switching capabilities, making it suitable for switching and power management roles in various electronic systems.

Key Specifications

Type Description
Manufacturer Nexperia USA Inc.
Part Number NX7002BKWX
Package SC-70, SOT-323
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (ID) 270 mA (Ta), 0.33 A (max)
On-Resistance (Rds On) @ Vgs = 10 V 2.8 Ω @ 200 mA, 10 V
Gate Threshold Voltage (Vgs(th)) 2.1 V @ 250 μA
Input Capacitance (Ciss) 23.6 pF @ 10 V
Power Dissipation (Ptot) 310 mW (Ta), 1.67 W (Tc)
Operating Temperature -55°C to 150°C (Tj)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Operating Mode Enhancement Mode

Key Features

  • Logic-Level Compatibility: The NX7002BKWX is logic-level compatible, making it easy to interface with microcontrollers and other logic circuits.
  • Fast Switching: This MOSFET features very fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for low on-resistance and high efficiency.
  • ESD Protection: Offers ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.
  • Low On-Resistance: With an Rds On of 2.8 Ω @ 200 mA, 10 V, it minimizes power losses in switching applications.
  • High Power Dissipation: Capable of handling up to 310 mW (Ta) and 1.67 W (Tc) of power dissipation.

Applications

The Nexperia NX7002BKWX is versatile and can be used in a wide range of applications, including:

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and reliability.
  • Industrial Power Management: Ideal for industrial power management systems requiring efficient and reliable switching.
  • Consumer Electronics: Used in consumer electronics such as power supplies, motor control, and battery management systems.
  • Mobile and Wearable Devices: Its low power consumption and fast switching make it suitable for mobile and wearable devices.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NX7002BKWX?

    The maximum drain to source voltage (Vdss) is 60 V.

  2. What is the continuous drain current (ID) of the NX7002BKWX?

    The continuous drain current (ID) is 270 mA (Ta).

  3. What is the on-resistance (Rds On) of the NX7002BKWX at Vgs = 10 V?

    The on-resistance (Rds On) at Vgs = 10 V is 2.8 Ω @ 200 mA.

  4. What is the gate threshold voltage (Vgs(th)) of the NX7002BKWX?

    The gate threshold voltage (Vgs(th)) is 2.1 V @ 250 μA.

  5. What is the input capacitance (Ciss) of the NX7002BKWX?

    The input capacitance (Ciss) is 23.6 pF @ 10 V.

  6. What is the maximum power dissipation (Ptot) of the NX7002BKWX?

    The maximum power dissipation (Ptot) is 310 mW (Ta) and 1.67 W (Tc).

  7. What is the operating temperature range of the NX7002BKWX?

    The operating temperature range is -55°C to 150°C (Tj).

  8. Is the NX7002BKWX RoHS compliant?

    Yes, the NX7002BKWX is RoHS compliant.

  9. What is the moisture sensitivity level (MSL) of the NX7002BKWX?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. What are the typical applications of the NX7002BKWX?

    The NX7002BKWX is used in automotive systems, industrial power management, consumer electronics, and mobile and wearable devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number NX7002BKWX NX7002BKSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 23.6 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 6-TSSOP
Package / Case SC-70, SOT-323 6-TSSOP, SC-88, SOT-363

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