NX7002BKWX
  • Share:

Nexperia USA Inc. NX7002BKWX

Manufacturer No:
NX7002BKWX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 270MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Nexperia NX7002BKWX is a high-performance N-channel Trench MOSFET designed for a variety of applications requiring efficient power management. This device is part of Nexperia’s extensive portfolio of MOSFETs, known for their reliability and advanced technology. The NX7002BKWX features a low on-resistance and fast switching capabilities, making it suitable for switching and power management roles in various electronic systems.

Key Specifications

Type Description
Manufacturer Nexperia USA Inc.
Part Number NX7002BKWX
Package SC-70, SOT-323
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (ID) 270 mA (Ta), 0.33 A (max)
On-Resistance (Rds On) @ Vgs = 10 V 2.8 Ω @ 200 mA, 10 V
Gate Threshold Voltage (Vgs(th)) 2.1 V @ 250 μA
Input Capacitance (Ciss) 23.6 pF @ 10 V
Power Dissipation (Ptot) 310 mW (Ta), 1.67 W (Tc)
Operating Temperature -55°C to 150°C (Tj)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Operating Mode Enhancement Mode

Key Features

  • Logic-Level Compatibility: The NX7002BKWX is logic-level compatible, making it easy to interface with microcontrollers and other logic circuits.
  • Fast Switching: This MOSFET features very fast switching times, which is crucial for high-frequency applications.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for low on-resistance and high efficiency.
  • ESD Protection: Offers ElectroStatic Discharge (ESD) protection greater than 2 kV HBM.
  • Low On-Resistance: With an Rds On of 2.8 Ω @ 200 mA, 10 V, it minimizes power losses in switching applications.
  • High Power Dissipation: Capable of handling up to 310 mW (Ta) and 1.67 W (Tc) of power dissipation.

Applications

The Nexperia NX7002BKWX is versatile and can be used in a wide range of applications, including:

  • Automotive Systems: Suitable for various automotive applications due to its robust performance and reliability.
  • Industrial Power Management: Ideal for industrial power management systems requiring efficient and reliable switching.
  • Consumer Electronics: Used in consumer electronics such as power supplies, motor control, and battery management systems.
  • Mobile and Wearable Devices: Its low power consumption and fast switching make it suitable for mobile and wearable devices.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the NX7002BKWX?

    The maximum drain to source voltage (Vdss) is 60 V.

  2. What is the continuous drain current (ID) of the NX7002BKWX?

    The continuous drain current (ID) is 270 mA (Ta).

  3. What is the on-resistance (Rds On) of the NX7002BKWX at Vgs = 10 V?

    The on-resistance (Rds On) at Vgs = 10 V is 2.8 Ω @ 200 mA.

  4. What is the gate threshold voltage (Vgs(th)) of the NX7002BKWX?

    The gate threshold voltage (Vgs(th)) is 2.1 V @ 250 μA.

  5. What is the input capacitance (Ciss) of the NX7002BKWX?

    The input capacitance (Ciss) is 23.6 pF @ 10 V.

  6. What is the maximum power dissipation (Ptot) of the NX7002BKWX?

    The maximum power dissipation (Ptot) is 310 mW (Ta) and 1.67 W (Tc).

  7. What is the operating temperature range of the NX7002BKWX?

    The operating temperature range is -55°C to 150°C (Tj).

  8. Is the NX7002BKWX RoHS compliant?

    Yes, the NX7002BKWX is RoHS compliant.

  9. What is the moisture sensitivity level (MSL) of the NX7002BKWX?

    The moisture sensitivity level (MSL) is 1 (Unlimited).

  10. What are the typical applications of the NX7002BKWX?

    The NX7002BKWX is used in automotive systems, industrial power management, consumer electronics, and mobile and wearable devices.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23.6 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta), 1.67W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.25
2,803

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX7002BKWX NX7002BKSX
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 270mA (Ta) 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V 2.8Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 10 V 1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23.6 pF @ 10 V 23.6 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 310mW (Ta), 1.67W (Tc) 310mW (Ta), 1.67W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 6-TSSOP
Package / Case SC-70, SOT-323 6-TSSOP, SC-88, SOT-363

Related Product By Categories

STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BC850CW/ZLX
BC850CW/ZLX
Nexperia USA Inc.
TRANS NPN SOT323
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP
NXB0108PWJ
NXB0108PWJ
Nexperia USA Inc.
NXB0108PW/SOT360/TSSOP20