BUK7606-55B,118
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Nexperia USA Inc. BUK7606-55B,118

Manufacturer No:
BUK7606-55B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 75A D2PAK
Delivery:
Payment:
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iso9001
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Product Introduction

Overview

The BUK7606-55B,118 is a high-performance N-channel TrenchMOS standard level MOSFET manufactured by Nexperia USA Inc. This device is designed to offer high efficiency and reliability in various power management applications. With its robust construction and advanced TrenchMOS technology, it is suitable for use in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)75 A
RDS(on) (Drain-Source On-State Resistance)2.5 mΩ (typical at VGS = 10 V)
VGS(th) (Gate-Source Threshold Voltage)2.5 V (typical)
Ptot (Total Power Dissipation)417 W (at Tj = 25°C)
Tj (Junction Temperature)-55 to 175°C
PackageD2PAK (TO-263)

Key Features

  • High efficiency due to low RDS(on) and low switching losses.
  • Advanced TrenchMOS technology for improved performance.
  • High current handling capability of up to 75 A.
  • Wide operating temperature range from -55°C to 175°C.
  • D2PAK (TO-263) package for easy mounting and thermal management.

Applications

  • Power management in automotive systems.
  • Industrial power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems, such as solar and wind power.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK7606-55B,118?
    The maximum drain-source voltage is 55 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 75 A.
  3. What is the typical on-state resistance of the BUK7606-55B,118?
    The typical on-state resistance is 2.5 mΩ at VGS = 10 V.
  4. What is the gate-source threshold voltage of this device?
    The gate-source threshold voltage is typically 2.5 V.
  5. What is the total power dissipation of the BUK7606-55B,118 at 25°C?
    The total power dissipation is 417 W at Tj = 25°C.
  6. What is the operating junction temperature range of this MOSFET?
    The operating junction temperature range is from -55°C to 175°C.
  7. In what package is the BUK7606-55B,118 available?
    The device is available in the D2PAK (TO-263) package.
  8. What are some common applications for the BUK7606-55B,118?
    Common applications include power management in automotive systems, industrial power supplies, motor control, renewable energy systems, and high-power switching applications.
  9. What technology is used in the BUK7606-55B,118?
    The device uses advanced TrenchMOS technology.
  10. How does the low RDS(on) benefit the performance of the BUK7606-55B,118?
    The low RDS(on) reduces switching losses and improves overall efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):254W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK7606-55B,118 BUK7607-55B,118 BUK7606-75B,118 BUK7606-55A,118
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 25A, 10V 7.1mOhm @ 25A, 10V 5.6mOhm @ 25A, 10V 6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 53 nC @ 10 V 91 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 3760 pF @ 25 V 7446 pF @ 25 V 6000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 254W (Tc) 203W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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