BUK7606-55B,118
  • Share:

Nexperia USA Inc. BUK7606-55B,118

Manufacturer No:
BUK7606-55B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 75A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7606-55B,118 is a high-performance N-channel TrenchMOS standard level MOSFET manufactured by Nexperia USA Inc. This device is designed to offer high efficiency and reliability in various power management applications. With its robust construction and advanced TrenchMOS technology, it is suitable for use in demanding environments.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)75 A
RDS(on) (Drain-Source On-State Resistance)2.5 mΩ (typical at VGS = 10 V)
VGS(th) (Gate-Source Threshold Voltage)2.5 V (typical)
Ptot (Total Power Dissipation)417 W (at Tj = 25°C)
Tj (Junction Temperature)-55 to 175°C
PackageD2PAK (TO-263)

Key Features

  • High efficiency due to low RDS(on) and low switching losses.
  • Advanced TrenchMOS technology for improved performance.
  • High current handling capability of up to 75 A.
  • Wide operating temperature range from -55°C to 175°C.
  • D2PAK (TO-263) package for easy mounting and thermal management.

Applications

  • Power management in automotive systems.
  • Industrial power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Renewable energy systems, such as solar and wind power.
  • High-power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK7606-55B,118?
    The maximum drain-source voltage is 55 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 75 A.
  3. What is the typical on-state resistance of the BUK7606-55B,118?
    The typical on-state resistance is 2.5 mΩ at VGS = 10 V.
  4. What is the gate-source threshold voltage of this device?
    The gate-source threshold voltage is typically 2.5 V.
  5. What is the total power dissipation of the BUK7606-55B,118 at 25°C?
    The total power dissipation is 417 W at Tj = 25°C.
  6. What is the operating junction temperature range of this MOSFET?
    The operating junction temperature range is from -55°C to 175°C.
  7. In what package is the BUK7606-55B,118 available?
    The device is available in the D2PAK (TO-263) package.
  8. What are some common applications for the BUK7606-55B,118?
    Common applications include power management in automotive systems, industrial power supplies, motor control, renewable energy systems, and high-power switching applications.
  9. What technology is used in the BUK7606-55B,118?
    The device uses advanced TrenchMOS technology.
  10. How does the low RDS(on) benefit the performance of the BUK7606-55B,118?
    The low RDS(on) reduces switching losses and improves overall efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):254W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.55
204

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK7606-55B,118 BUK7607-55B,118 BUK7606-75B,118 BUK7606-55A,118
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 75 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc) 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 25A, 10V 7.1mOhm @ 25A, 10V 5.6mOhm @ 25A, 10V 6.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 53 nC @ 10 V 91 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 3760 pF @ 25 V 7446 pF @ 25 V 6000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 254W (Tc) 203W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

PMEG2020EH/6X
PMEG2020EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BC847QAPNZ
BC847QAPNZ
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP
BZX84-C33
BZX84-C33
Nexperia USA Inc.
BZX84 SERIES - VOLTAGE REGULATOR