BSH205G2VL
  • Share:

Nexperia USA Inc. BSH205G2VL

Manufacturer No:
BSH205G2VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.3A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH205G2VL is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of discrete semiconductor products and is specifically designed for automotive and industrial applications. The MOSFET is built using Trench MOSFET technology, which ensures very fast switching and high efficiency. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Type NumberBSH205G2VL
PackageSOT23 (TO-236AB)
Channel TypeP-channel
VDS [max]20 V
RDSon [max] @ VGS = 4.5 V; @25 °C118 mΩ
RDSon [max] @ VGS = 2.5 V152 mΩ
Tj [max]175 °C
ID [max]-2.6 A
QGD [typ]1.2 nC
QG(tot) [typ] @ VGS = 4.5 V4.6 nC
Ptot [max]480 mW
VGSth [typ]-0.65 V
Automotive QualifiedYes (AEC-Q101)

Key Features

  • Trench MOSFET Technology: Ensures very fast switching and high efficiency.
  • Low Threshold Voltage: Facilitates easier control and lower power consumption.
  • Extended Temperature Range: Maximum junction temperature of 175 °C, making it suitable for high-temperature applications.
  • Small SOT23 Package: Compact SMD package ideal for space-constrained designs.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications.

Applications

  • Relay Driver: Suitable for driving relays in various automotive and industrial systems.
  • High-Speed Line Driver: Ideal for high-speed signal transmission applications.
  • High-Side Load Switch: Can be used as a load switch in high-side configurations.
  • Switching Circuits: Applicable in various switching circuits requiring fast and efficient MOSFETs.
  • Automotive Electronics: Used in automotive systems such as power management, motor control, and other electronic subsystems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSH205G2VL MOSFET?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the BSH205G2VL?
    The package type is SOT23 (TO-236AB).
  3. Is the BSH205G2VL AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the maximum junction temperature (Tj) of the BSH205G2VL?
    The maximum junction temperature (Tj) is 175 °C.
  5. What are some typical applications of the BSH205G2VL?
    Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  6. What is the typical gate-source threshold voltage (VGSth) of the BSH205G2VL?
    The typical gate-source threshold voltage (VGSth) is -0.65 V.
  7. What is the maximum drain current (ID) of the BSH205G2VL?
    The maximum drain current (ID) is -2.6 A.
  8. What technology is used in the BSH205G2VL MOSFET?
    The BSH205G2VL uses Trench MOSFET technology.
  9. Is the BSH205G2VL suitable for high-temperature applications?
    Yes, it is suitable for high-temperature applications due to its extended temperature range.
  10. Where can I find more detailed specifications and documentation for the BSH205G2VL?
    You can find detailed specifications and documentation on the Nexperia website or through authorized distributors like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:170mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:418 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.10
7,460

Please send RFQ , we will respond immediately.

Same Series
BSH205G2VL
BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220

Related Product By Brand

PDZ33B,115
PDZ33B,115
Nexperia USA Inc.
DIODE ZENER 33V 400MW SOD323
BZX84-C4V3,235
BZX84-C4V3,235
Nexperia USA Inc.
DIODE ZENER 4.3V 250MW TO236AB
PUMH2/DG/B3,115
PUMH2/DG/B3,115
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74HC11PW,118
74HC11PW,118
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14TSSOP
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
PESD5V0U1UL315
PESD5V0U1UL315
Nexperia USA Inc.
NOW NEXPERIA PESD5V0U1UL TRANS V