BSH205G2VL
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Nexperia USA Inc. BSH205G2VL

Manufacturer No:
BSH205G2VL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.3A TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BSH205G2VL is a 20 V, P-channel Trench MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of discrete semiconductor products and is specifically designed for automotive and industrial applications. The MOSFET is built using Trench MOSFET technology, which ensures very fast switching and high efficiency. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Type NumberBSH205G2VL
PackageSOT23 (TO-236AB)
Channel TypeP-channel
VDS [max]20 V
RDSon [max] @ VGS = 4.5 V; @25 °C118 mΩ
RDSon [max] @ VGS = 2.5 V152 mΩ
Tj [max]175 °C
ID [max]-2.6 A
QGD [typ]1.2 nC
QG(tot) [typ] @ VGS = 4.5 V4.6 nC
Ptot [max]480 mW
VGSth [typ]-0.65 V
Automotive QualifiedYes (AEC-Q101)

Key Features

  • Trench MOSFET Technology: Ensures very fast switching and high efficiency.
  • Low Threshold Voltage: Facilitates easier control and lower power consumption.
  • Extended Temperature Range: Maximum junction temperature of 175 °C, making it suitable for high-temperature applications.
  • Small SOT23 Package: Compact SMD package ideal for space-constrained designs.
  • AEC-Q101 Qualified: Meets the stringent requirements for automotive applications.

Applications

  • Relay Driver: Suitable for driving relays in various automotive and industrial systems.
  • High-Speed Line Driver: Ideal for high-speed signal transmission applications.
  • High-Side Load Switch: Can be used as a load switch in high-side configurations.
  • Switching Circuits: Applicable in various switching circuits requiring fast and efficient MOSFETs.
  • Automotive Electronics: Used in automotive systems such as power management, motor control, and other electronic subsystems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSH205G2VL MOSFET?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the package type of the BSH205G2VL?
    The package type is SOT23 (TO-236AB).
  3. Is the BSH205G2VL AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  4. What is the maximum junction temperature (Tj) of the BSH205G2VL?
    The maximum junction temperature (Tj) is 175 °C.
  5. What are some typical applications of the BSH205G2VL?
    Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
  6. What is the typical gate-source threshold voltage (VGSth) of the BSH205G2VL?
    The typical gate-source threshold voltage (VGSth) is -0.65 V.
  7. What is the maximum drain current (ID) of the BSH205G2VL?
    The maximum drain current (ID) is -2.6 A.
  8. What technology is used in the BSH205G2VL MOSFET?
    The BSH205G2VL uses Trench MOSFET technology.
  9. Is the BSH205G2VL suitable for high-temperature applications?
    Yes, it is suitable for high-temperature applications due to its extended temperature range.
  10. Where can I find more detailed specifications and documentation for the BSH205G2VL?
    You can find detailed specifications and documentation on the Nexperia website or through authorized distributors like Mouser and Digi-Key.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:170mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:418 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSH205G2VL
BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB

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