BC857B/DG/B4R
  • Share:

Nexperia USA Inc. BC857B/DG/B4R

Manufacturer No:
BC857B/DG/B4R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857B is a PNP general-purpose transistor produced by Nexperia USA Inc. It is part of the BC857 series, which includes several variants such as BC857, BC857A, BC857B, and BC857C. These transistors are designed for low current and low voltage applications, making them suitable for a wide range of electronic designs.

The BC857B is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs. This transistor is known for its reliability, efficiency, and versatility in various applications.

Key Specifications

Parameter Min Typ Max Unit
Collector-Base Voltage (VCBO) - - -50 V
Collector-Emitter Voltage (VCEO) - - -45 V
Emitter-Base Voltage (VEBO) - - -5 V
Collector Current (IC) - - 100 mA
Peak Collector Current (ICM) - - 200 mA
DC Current Gain (hFE) 220 - 475 -
Junction Temperature (TJ) - - 150 °C
Ambient Temperature (Tamb) -65 - 150 °C
Total Power Dissipation (Ptot) - - 250 mW

Key Features

  • Low Current Capability: Maximum collector current of 100 mA, making it suitable for low-power applications.
  • Low Voltage Operation: Collector-emitter voltage up to -45 V, suitable for various low-voltage circuits.
  • Compact Packaging: SOT23 (TO-236AB) package, ideal for space-constrained designs.
  • High Current Gain: DC current gain (hFE) ranges from 220 to 475, ensuring reliable amplification and switching performance.
  • Wide Temperature Range: Operating temperature from -65°C to 150°C, making it versatile for different environmental conditions.

Applications

The BC857B transistor is widely used in various applications across different industries, including:

  • Automotive: For general-purpose switching and amplification in automotive electronics.
  • Industrial: In control circuits, amplifiers, and switching applications.
  • Consumer Electronics: In audio equipment, home appliances, and other consumer devices.
  • Mobile and Wearables: Due to its compact size and low power consumption, it is suitable for mobile devices and wearables.
  • Power and Computing: In power management circuits and computing hardware.

Q & A

  1. What is the maximum collector current of the BC857B transistor?

    The maximum collector current of the BC857B transistor is 100 mA.

  2. What is the maximum collector-emitter voltage for the BC857B?

    The maximum collector-emitter voltage for the BC857B is -45 V.

  3. What package type is used for the BC857B transistor?

    The BC857B transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  4. What is the range of DC current gain (hFE) for the BC857B?

    The DC current gain (hFE) for the BC857B ranges from 220 to 475.

  5. What is the operating temperature range for the BC857B transistor?

    The operating temperature range for the BC857B transistor is from -65°C to 150°C.

  6. What are some common applications of the BC857B transistor?

    The BC857B transistor is used in automotive, industrial, consumer electronics, mobile and wearables, and power and computing applications.

  7. How much total power can the BC857B transistor dissipate?

    The total power dissipation (Ptot) for the BC857B transistor is 250 mW.

  8. What is the peak collector current for the BC857B transistor?

    The peak collector current (ICM) for the BC857B transistor is 200 mA.

  9. Is the BC857B transistor RoHS compliant?

    Yes, the BC857B transistor is RoHS compliant.

  10. Where can I find more detailed technical information and support for the BC857B transistor?

    You can find detailed technical information and support on Nexperia's official website, including data sheets, SPICE models, and reflow/wave soldering profiles.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
606

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES
DD15S20WES
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC857B/DG/B4R BC857C/DG/B4R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
NSV1C201LT1G
NSV1C201LT1G
onsemi
TRANS NPN 100V 2A SOT23-3
BCW60D
BCW60D
Fairchild Semiconductor
TRANS NPN 32V 0.1A SOT23-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
2N2907AUA/TR
2N2907AUA/TR
Microchip Technology
TRANS PNP 60V 0.6A UA

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
PEMD2,315
PEMD2,315
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PBSS5540Z,115
PBSS5540Z,115
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BC847CW-QX
BC847CW-QX
Nexperia USA Inc.
TRANS NPN 45V 0.1A SOT323
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP