BC857B/DG/B4R
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Nexperia USA Inc. BC857B/DG/B4R

Manufacturer No:
BC857B/DG/B4R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857B is a PNP general-purpose transistor produced by Nexperia USA Inc. It is part of the BC857 series, which includes several variants such as BC857, BC857A, BC857B, and BC857C. These transistors are designed for low current and low voltage applications, making them suitable for a wide range of electronic designs.

The BC857B is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs. This transistor is known for its reliability, efficiency, and versatility in various applications.

Key Specifications

Parameter Min Typ Max Unit
Collector-Base Voltage (VCBO) - - -50 V
Collector-Emitter Voltage (VCEO) - - -45 V
Emitter-Base Voltage (VEBO) - - -5 V
Collector Current (IC) - - 100 mA
Peak Collector Current (ICM) - - 200 mA
DC Current Gain (hFE) 220 - 475 -
Junction Temperature (TJ) - - 150 °C
Ambient Temperature (Tamb) -65 - 150 °C
Total Power Dissipation (Ptot) - - 250 mW

Key Features

  • Low Current Capability: Maximum collector current of 100 mA, making it suitable for low-power applications.
  • Low Voltage Operation: Collector-emitter voltage up to -45 V, suitable for various low-voltage circuits.
  • Compact Packaging: SOT23 (TO-236AB) package, ideal for space-constrained designs.
  • High Current Gain: DC current gain (hFE) ranges from 220 to 475, ensuring reliable amplification and switching performance.
  • Wide Temperature Range: Operating temperature from -65°C to 150°C, making it versatile for different environmental conditions.

Applications

The BC857B transistor is widely used in various applications across different industries, including:

  • Automotive: For general-purpose switching and amplification in automotive electronics.
  • Industrial: In control circuits, amplifiers, and switching applications.
  • Consumer Electronics: In audio equipment, home appliances, and other consumer devices.
  • Mobile and Wearables: Due to its compact size and low power consumption, it is suitable for mobile devices and wearables.
  • Power and Computing: In power management circuits and computing hardware.

Q & A

  1. What is the maximum collector current of the BC857B transistor?

    The maximum collector current of the BC857B transistor is 100 mA.

  2. What is the maximum collector-emitter voltage for the BC857B?

    The maximum collector-emitter voltage for the BC857B is -45 V.

  3. What package type is used for the BC857B transistor?

    The BC857B transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  4. What is the range of DC current gain (hFE) for the BC857B?

    The DC current gain (hFE) for the BC857B ranges from 220 to 475.

  5. What is the operating temperature range for the BC857B transistor?

    The operating temperature range for the BC857B transistor is from -65°C to 150°C.

  6. What are some common applications of the BC857B transistor?

    The BC857B transistor is used in automotive, industrial, consumer electronics, mobile and wearables, and power and computing applications.

  7. How much total power can the BC857B transistor dissipate?

    The total power dissipation (Ptot) for the BC857B transistor is 250 mW.

  8. What is the peak collector current for the BC857B transistor?

    The peak collector current (ICM) for the BC857B transistor is 200 mA.

  9. Is the BC857B transistor RoHS compliant?

    Yes, the BC857B transistor is RoHS compliant.

  10. Where can I find more detailed technical information and support for the BC857B transistor?

    You can find detailed technical information and support on Nexperia's official website, including data sheets, SPICE models, and reflow/wave soldering profiles.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number BC857B/DG/B4R BC857C/DG/B4R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 125 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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