Overview
The BC857C/DG/B4R is a PNP general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857 series, known for its reliability and versatility in various electronic circuits. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient designs.
The BC857C/DG/B4R is designed to operate with a collector-emitter voltage of up to -45 V and a continuous collector current of -100 mA, making it a robust choice for a wide range of applications. The transistor also features a high DC current gain, which is essential for amplification and switching tasks.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | - | - | -50 | V | |
| Collector-Emitter Voltage (VCEO) | - | - | -45 | V | |
| Emitter-Base Voltage (VEBO) | - | - | -5 | V | |
| Collector Current (IC) | - | - | -100 | mA | |
| Peak Collector Current (ICM) | - | - | -200 | mA | |
| Peak Base Current (IBM) | - | - | -200 | mA | |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C | - | -250 | mW | |
| Junction Temperature (Tj) | - | - | 150 | °C | |
| Ambient Temperature (Tamb) | - | -65 | 150 | °C | |
| Storage Temperature (Tstg) | - | -65 | 150 | °C | |
| DC Current Gain (hFE) | VCE = -5 V, IC = -2 mA | 420 | - | 800 | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = -100 mA, IB = -5 mA | -250 | - | -650 | mV |
| Base-Emitter Saturation Voltage (VBEsat) | IC = -100 mA, IB = -5 mA | -600 | - | -850 | mV |
Key Features
- High DC Current Gain: The BC857C/DG/B4R offers a high DC current gain (hFE) ranging from 420 to 800, making it suitable for amplification and switching applications.
- Low Saturation Voltages: The transistor features low collector-emitter and base-emitter saturation voltages, which are essential for minimizing power losses in switching circuits.
- Compact Package: The SOT23 (TO-236AB) package is small and surface-mountable, ideal for space-constrained designs.
- High Collector-Emitter Voltage: With a maximum collector-emitter voltage of -45 V, this transistor can handle a wide range of voltage levels.
- Lead-Free and RoHS Compliant: The BC857C/DG/B4R is lead-free and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Applications
- General-Purpose Amplification: Suitable for various amplification tasks in audio, video, and other electronic circuits.
- Switching Circuits: Ideal for use in switching applications due to its low saturation voltages and high current gain.
- Automotive Electronics: Can be used in automotive systems where reliability and robustness are critical.
- Consumer Electronics: Applicable in a wide range of consumer electronic devices such as TVs, radios, and other household appliances.
- Industrial Control Systems: Used in industrial control systems for reliable and efficient operation.
Q & A
- What is the maximum collector-emitter voltage of the BC857C/DG/B4R transistor?
The maximum collector-emitter voltage (VCEO) is -45 V.
- What is the continuous collector current rating of the BC857C/DG/B4R?
The continuous collector current (IC) is rated at -100 mA.
- What is the typical DC current gain (hFE) of the BC857C/DG/B4R?
The DC current gain (hFE) ranges from 420 to 800, with a typical value depending on the specific type and operating conditions.
- What is the package type of the BC857C/DG/B4R transistor?
The transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- Is the BC857C/DG/B4R lead-free and RoHS compliant?
Yes, the BC857C/DG/B4R is lead-free and RoHS compliant.
- What are the typical applications of the BC857C/DG/B4R transistor?
The transistor is suitable for general-purpose amplification, switching circuits, automotive electronics, consumer electronics, and industrial control systems.
- What is the maximum junction temperature of the BC857C/DG/B4R?
The maximum junction temperature (Tj) is 150 °C.
- What is the storage temperature range for the BC857C/DG/B4R?
The storage temperature range (Tstg) is from -65 °C to 150 °C.
- What are the saturation voltages of the BC857C/DG/B4R transistor?
The collector-emitter saturation voltage (VCEsat) ranges from -250 mV to -650 mV, and the base-emitter saturation voltage (VBEsat) ranges from -600 mV to -850 mV.
- How does the BC857C/DG/B4R handle high current peaks?
The transistor can handle peak collector currents up to -200 mA, ensuring robust performance under transient conditions.
