BC847AQBZ
  • Share:

Nexperia USA Inc. BC847AQBZ

Manufacturer No:
BC847AQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AQBZ is a bipolar junction transistor (BJT) produced by Nexperia USA Inc. This NPN transistor is designed for general-purpose applications and is known for its reliability and performance in a variety of electronic circuits. The BC847AQBZ is part of the BC847 series, which is widely used in electronic designs due to its robust specifications and versatility.

Key Specifications

ParameterValue
TypeNPN Bipolar Junction Transistor (BJT)
Maximum Collector-Emitter Voltage (Vce)45 V
Maximum Collector Current (Ic)100 mA
Maximum Power Dissipation (Ptot)340 mW
Transition Frequency (ft)100 MHz
Package TypeSurface Mount, Wettable Flank DFN1110D-3
Operating Temperature Range-55°C to 150°C

Key Features

  • High current gain (beta) for reliable switching and amplification.
  • Low noise and high frequency performance, making it suitable for a wide range of applications.
  • Compact surface mount package (DFN1110D-3) for space-saving designs.
  • Wettable flanks for improved solderability and inspection.
  • AEC-Q101 qualified for automotive applications, ensuring high reliability and robustness.

Applications

  • General-purpose switching and amplification in electronic circuits.
  • Automotive electronics, including sensors, actuators, and control systems.
  • Consumer electronics such as audio amplifiers, power supplies, and control circuits.
  • Industrial control systems, including motor control and power management.
  • Medical devices requiring reliable and precise electronic control.

Q & A

  1. What is the maximum collector-emitter voltage of the BC847AQBZ transistor?
    The maximum collector-emitter voltage (Vce) is 45 V.
  2. What is the maximum collector current of the BC847AQBZ transistor?
    The maximum collector current (Ic) is 100 mA.
  3. What is the package type of the BC847AQBZ transistor?
    The package type is Surface Mount, Wettable Flank DFN1110D-3.
  4. What is the operating temperature range of the BC847AQBZ transistor?
    The operating temperature range is -55°C to 150°C.
  5. Is the BC847AQBZ transistor AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  6. What is the transition frequency (ft) of the BC847AQBZ transistor?
    The transition frequency (ft) is 100 MHz.
  7. What are some common applications of the BC847AQBZ transistor?
    General-purpose switching and amplification, automotive electronics, consumer electronics, industrial control systems, and medical devices.
  8. Why is the wettable flank package important?
    The wettable flank package improves solderability and inspection during the manufacturing process.
  9. Can the BC847AQBZ be used in high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its high transition frequency.
  10. Where can I purchase the BC847AQBZ transistor?
    You can purchase it from various distributors such as Digi-Key, Mouser Electronics, and Arrow Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.24
2,036

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE3X
DD26S20WE3X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC847AQBZ BC847BQBZ BC847AQCZ BC847AQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Active
Transistor Type NPN NPN - NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 340 mW 340 mW 360 mW 280 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1110D-3 DFN1412D-3 DFN1010D-3

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
TIP147G
TIP147G
onsemi
TRANS PNP DARL 100V 10A TO247-3
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BC857B/DG/B3,215
BC857B/DG/B3,215
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB

Related Product By Brand

BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
BC817-40QCH-QZ
BC817-40QCH-QZ
Nexperia USA Inc.
TRANS NPN 45V 0.5A DFN1412D-3
PDTC144EU,115
PDTC144EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PSMN1R4-30YLD/1X
PSMN1R4-30YLD/1X
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY
74HC244D-Q100,118
74HC244D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HCT125DB,118
74HCT125DB,118
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14SSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP