BC847BQBZ
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Nexperia USA Inc. BC847BQBZ

Manufacturer No:
BC847BQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BQBZ is a general-purpose NPN bipolar junction transistor (BJT) produced by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for space-constrained designs. The BC847BQBZ is part of the BC847 series, which offers different gain selections to cater to various application requirements.

Key Specifications

Parameter Value
Transistor Polarity NPN
Collector Emitter Voltage V(br)ceo 45V
Transition Frequency ft 100MHz
Power Dissipation Pd 250mW
DC Collector Current 100mA
DC Current Gain hFE 200 to 450
Transistor Case Style SOT23 (TO-236AB)
No. of Pins 3 Pins
Operating Temperature Max 150°C
Collector Emitter Saturation Voltage Vce(on) 200mV
Automotive Qualified Yes

Key Features

  • General-Purpose Transistor: Suitable for a wide range of applications including amplification and switching.
  • Small Package: SOT23 (TO-236AB) package, ideal for space-constrained designs.
  • High Transition Frequency: 100MHz, making it suitable for high-frequency applications.
  • Low Power Dissipation: 250mW, contributing to energy-efficient designs.
  • Multiple Gain Selections: Available in different gain versions (BC847A, BC847B, BC847C) to meet specific application needs.
  • Automotive Qualified: Suitable for use in automotive applications, ensuring reliability and robustness.

Applications

  • Automotive Electronics: Used in various automotive systems due to its automotive qualification and robustness.
  • Industrial Electronics: Suitable for industrial control systems, sensors, and other industrial applications.
  • Consumer Electronics: Found in mobile devices, wearables, and other consumer electronic products.
  • Power and Computing: Used in power management and computing systems where reliability and efficiency are crucial.

Q & A

  1. What is the collector-emitter voltage rating of the BC847BQBZ transistor?

    The collector-emitter voltage rating (V(br)ceo) of the BC847BQBZ transistor is 45V.

  2. What is the maximum DC collector current of the BC847BQBZ transistor?

    The maximum DC collector current of the BC847BQBZ transistor is 100mA.

  3. What is the transition frequency (ft) of the BC847BQBZ transistor?

    The transition frequency (ft) of the BC847BQBZ transistor is 100MHz.

  4. What is the power dissipation (Pd) of the BC847BQBZ transistor?

    The power dissipation (Pd) of the BC847BQBZ transistor is 250mW.

  5. What is the package type of the BC847BQBZ transistor?

    The BC847BQBZ transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  6. Is the BC847BQBZ transistor automotive qualified?

    Yes, the BC847BQBZ transistor is automotive qualified.

  7. What are the different gain versions available for the BC847 series?

    The BC847 series is available in different gain versions: BC847A, BC847B, and BC847C.

  8. What is the operating temperature range of the BC847BQBZ transistor?

    The operating temperature range of the BC847BQBZ transistor has a maximum operating temperature of 150°C.

  9. What is the collector-emitter saturation voltage (Vce(on)) of the BC847BQBZ transistor?

    The collector-emitter saturation voltage (Vce(on)) of the BC847BQBZ transistor is 200mV.

  10. What are some common applications of the BC847BQBZ transistor?

    The BC847BQBZ transistor is commonly used in automotive, industrial, and consumer electronics, as well as in power and computing systems.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC847BQBZ BC847BQCZ BC847CQBZ BC847AQBZ BC847BQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Obsolete Active Active
Transistor Type NPN - NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 340 mW 360 mW 340 mW 340 mW 280 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1110D-3 DFN1010D-3

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