BC847BQAZ
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Nexperia USA Inc. BC847BQAZ

Manufacturer No:
BC847BQAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BQAZ is a 45 V, 100 mA NPN general-purpose transistor produced by Nexperia USA Inc. This transistor is part of the BC847 series and is housed in a leadless ultra-small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package. The BC847BQAZ is designed for a wide range of applications, including automotive, industrial, and consumer electronics, due to its robust specifications and compact packaging.

Key Specifications

Type Number Package Channel Type Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] hFE [max] TJ [max] (°C) fT [min] (MHz) Automotive Qualified
BC847BQA DFN1010D-3 (SOT1215) NPN 280.0 45.0 100.0 200.0 450.0 150 100.0 Yes

Key Features

  • General-purpose NPN transistor with three current gain selections (A, B, C).
  • Compact DFN1010D-3 (SOT1215) package with a low profile of 0.37 mm, suitable for Automatic Optical Inspection (AOI).
  • High collector-emitter voltage (VCEO) of 45 V and a maximum collector current (IC) of 100 mA.
  • Wide operating temperature range up to 150°C.
  • Transition frequency (fT) of 100 MHz.
  • Automotive qualified, adhering to stringent automotive standards.

Applications

The BC847BQAZ transistor is versatile and finds applications across various industries, including:

  • Automotive: For use in vehicle electronics and systems.
  • Industrial: Suitable for control and monitoring systems, power management, and other industrial applications.
  • Consumer Electronics: Used in a variety of consumer devices such as audio equipment, home appliances, and mobile devices.
  • Power and Computing: Applicable in power supplies, computing hardware, and other high-reliability applications.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC847BQAZ transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum collector current (IC) of the BC847BQAZ transistor?

    The maximum collector current (IC) is 100 mA.

  3. What is the package type of the BC847BQAZ transistor?

    The BC847BQAZ transistor is housed in a DFN1010D-3 (SOT1215) package.

  4. Is the BC847BQAZ transistor automotive qualified?

    Yes, the BC847BQAZ transistor is automotive qualified).

  5. What is the transition frequency (fT) of the BC847BQAZ transistor?

    The transition frequency (fT) is 100 MHz).

  6. What are the key applications of the BC847BQAZ transistor?

    The key applications include automotive, industrial, consumer electronics, power, and computing).

  7. What is the operating temperature range of the BC847BQAZ transistor?

    The operating temperature range is up to 150°C).

  8. Does the BC847BQAZ transistor have different current gain selections?

    Yes, the BC847 series, including the BC847BQAZ, offers three current gain selections (A, B, C)).

  9. Is the BC847BQAZ transistor suitable for Automatic Optical Inspection (AOI)?

    Yes, the transistor is suitable for AOI due to its package design).

  10. What is the power dissipation (Ptot) of the BC847BQAZ transistor?

    The power dissipation (Ptot) is 280 mW).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:280 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Same Series
BC847AQAZ
BC847AQAZ
TRANS NPN 45V 0.1A DFN1010D-3
BC847CQAZ
BC847CQAZ
TRANS NPN 45V 0.1A DFN1010D-3

Similar Products

Part Number BC847BQAZ BC847BQBZ BC847BQCZ BC847CQAZ BC847AQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Active Active
Transistor Type NPN NPN - NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 280 mW 340 mW 360 mW 280 mW 280 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1110D-3 DFN1412D-3 DFN1010D-3 DFN1010D-3

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