BC847AQCZ
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Nexperia USA Inc. BC847AQCZ

Manufacturer No:
BC847AQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847AQCZ is a 45 V, 100 mA NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is part of the BC847 series, which is known for its versatility in switching and amplification applications. The BC847AQCZ is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of electronic designs where space is a constraint.

Key Specifications

Type numberPackageVCE (max)IC (max)TJ (max)PNP complement
BC847SOT2345 V100 mA150°CBC857

Key Features

  • General-purpose NPN transistor suitable for switching and amplification applications.
  • Small SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • Maximum collector-emitter voltage (VCE) of 45 V and maximum collector current (IC) of 100 mA.
  • Maximum junction temperature (TJ) of 150°C.
  • Available in different gain selections (A, B, C).

Applications

The BC847AQCZ transistor is versatile and can be used in various applications across different industries, including:

  • Automotive systems for general-purpose switching and amplification.
  • Industrial control systems requiring reliable and efficient transistor performance.
  • Consumer electronics such as audio amplifiers, power supplies, and other general-purpose circuits.
  • Mobile and wearable devices where compact size and low power consumption are critical.

Q & A

  1. What is the maximum collector-emitter voltage (VCE) of the BC847AQCZ transistor?
    The maximum collector-emitter voltage (VCE) is 45 V.
  2. What is the maximum collector current (IC) of the BC847AQCZ transistor?
    The maximum collector current (IC) is 100 mA.
  3. What is the package type of the BC847AQCZ transistor?
    The BC847AQCZ transistor is packaged in a SOT23 (TO-236AB) SMD plastic package.
  4. What is the maximum junction temperature (TJ) of the BC847AQCZ transistor?
    The maximum junction temperature (TJ) is 150°C.
  5. Is the BC847AQCZ transistor still in production?
    No, the BC847AQCZ is obsolete and no longer manufactured. However, substitutes like BC847AQC-QZ are available.
  6. Where can I purchase the BC847AQCZ or its substitutes?
    You can purchase the substitutes from distributors such as Digi-Key, Mouser Electronics, and other listed partners.
  7. What are the PNP complements of the BC847AQCZ transistor?
    The PNP complements are BC857, BC857A, BC857B, and BC857C.
  8. What are the different gain selections available for the BC847 series?
    The BC847 series is available in different gain selections: A, B, and C.
  9. Can I use the BC847AQCZ transistor in high-temperature environments?
    Yes, but it should not exceed the maximum junction temperature of 150°C.
  10. How can I get technical support for the BC847AQCZ transistor?
    You can contact Nexperia’s technical support by filling out the answer form on their website.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC847AQCZ BC847BQCZ BC847AQAZ BC847AQBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Active Active
Transistor Type - - NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 110 @ 2mA, 5V
Power - Max 360 mW 360 mW 280 mW 340 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1010D-3 DFN1110D-3

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