BC807-40QBZ
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Nexperia USA Inc. BC807-40QBZ

Manufacturer No:
BC807-40QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QBZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for medium-power circuit applications and is known for its high power dissipation capability and high current handling. It is packaged in a DFN1110D-3 (SOT8015-3) surface mount package, which features a wettable flank for improved solder joint inspection.

Key Specifications

Parameter Value
Package DFN1110D-3 (SOT8015-3)
Polarity PNP
VCEO [max] -45 V
IC [max] -500 mA
Ptot 350 mW
hFE [min] 250
hFE [max] 600
TJ [max] 150°C
fT [min] 80 MHz
RoHS Compliance Yes

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.48 mm
  • General-purpose switching and amplification
  • Space-restricted applications due to compact package size

Applications

The BC807-40QBZ transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits
  • Medium-power electronic circuits
  • Automotive and industrial electronics
  • Consumer electronics and mobile devices
  • Power and computing applications where high current and power dissipation are required

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807-40QBZ transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BC807-40QBZ transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the total power dissipation (Ptot) of the BC807-40QBZ transistor?

    The total power dissipation (Ptot) is 350 mW.

  4. What is the minimum and maximum current gain (hFE) of the BC807-40QBZ transistor?

    The minimum current gain (hFE) is 250, and the maximum is 600.

  5. What is the maximum junction temperature (TJ) of the BC807-40QBZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the minimum transition frequency (fT) of the BC807-40QBZ transistor?

    The minimum transition frequency (fT) is 80 MHz.

  7. Is the BC807-40QBZ transistor RoHS compliant?

    Yes, the BC807-40QBZ transistor is RoHS compliant.

  8. What package type is used for the BC807-40QBZ transistor?

    The BC807-40QBZ transistor is packaged in a DFN1110D-3 (SOT8015-3) surface mount package.

  9. What are some common applications for the BC807-40QBZ transistor?

    Common applications include general-purpose switching and amplification, medium-power electronic circuits, automotive and industrial electronics, and consumer electronics.

  10. Is the BC807-40QBZ suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, the BC807-40QBZ is suitable for AOI of solder joints due to its wettable flank design.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC807-40QBZ BC807-40QCZ BC807-40QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - - PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 40 @ 500mA, 1V
Power - Max 350 mW 380 mW 900 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3

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