BC807-40QBZ
  • Share:

Nexperia USA Inc. BC807-40QBZ

Manufacturer No:
BC807-40QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QBZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for medium-power circuit applications and is known for its high power dissipation capability and high current handling. It is packaged in a DFN1110D-3 (SOT8015-3) surface mount package, which features a wettable flank for improved solder joint inspection.

Key Specifications

Parameter Value
Package DFN1110D-3 (SOT8015-3)
Polarity PNP
VCEO [max] -45 V
IC [max] -500 mA
Ptot 350 mW
hFE [min] 250
hFE [max] 600
TJ [max] 150°C
fT [min] 80 MHz
RoHS Compliance Yes

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.48 mm
  • General-purpose switching and amplification
  • Space-restricted applications due to compact package size

Applications

The BC807-40QBZ transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits
  • Medium-power electronic circuits
  • Automotive and industrial electronics
  • Consumer electronics and mobile devices
  • Power and computing applications where high current and power dissipation are required

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807-40QBZ transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BC807-40QBZ transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the total power dissipation (Ptot) of the BC807-40QBZ transistor?

    The total power dissipation (Ptot) is 350 mW.

  4. What is the minimum and maximum current gain (hFE) of the BC807-40QBZ transistor?

    The minimum current gain (hFE) is 250, and the maximum is 600.

  5. What is the maximum junction temperature (TJ) of the BC807-40QBZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the minimum transition frequency (fT) of the BC807-40QBZ transistor?

    The minimum transition frequency (fT) is 80 MHz.

  7. Is the BC807-40QBZ transistor RoHS compliant?

    Yes, the BC807-40QBZ transistor is RoHS compliant.

  8. What package type is used for the BC807-40QBZ transistor?

    The BC807-40QBZ transistor is packaged in a DFN1110D-3 (SOT8015-3) surface mount package.

  9. What are some common applications for the BC807-40QBZ transistor?

    Common applications include general-purpose switching and amplification, medium-power electronic circuits, automotive and industrial electronics, and consumer electronics.

  10. Is the BC807-40QBZ suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, the BC807-40QBZ is suitable for AOI of solder joints due to its wettable flank design.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.27
1,715

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC807-40QBZ BC807-40QCZ BC807-40QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - - PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 40 @ 500mA, 1V
Power - Max 350 mW 380 mW 900 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3

Related Product By Categories

BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89

Related Product By Brand

PDZ27BF
PDZ27BF
Nexperia USA Inc.
DIODE ZENER 27V 400MW SOD323
BC856BS,115
BC856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
74HCT4066D/C4118
74HCT4066D/C4118
Nexperia USA Inc.
74HCT4066D - SPST, 4 FUNC
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
HEF4020BT,653
HEF4020BT,653
Nexperia USA Inc.
IC COUNTER BINARY 14STAGE 16SOIC
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC138APW,112
74LVC138APW,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP
74AUP1G157GM-Q100X
74AUP1G157GM-Q100X
Nexperia USA Inc.
IC MULTIPLX 1 X 2:1 6XSON/SOT886
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN