BC807-40QBZ
  • Share:

Nexperia USA Inc. BC807-40QBZ

Manufacturer No:
BC807-40QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QBZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for medium-power circuit applications and is known for its high power dissipation capability and high current handling. It is packaged in a DFN1110D-3 (SOT8015-3) surface mount package, which features a wettable flank for improved solder joint inspection.

Key Specifications

Parameter Value
Package DFN1110D-3 (SOT8015-3)
Polarity PNP
VCEO [max] -45 V
IC [max] -500 mA
Ptot 350 mW
hFE [min] 250
hFE [max] 600
TJ [max] 150°C
fT [min] 80 MHz
RoHS Compliance Yes

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.48 mm
  • General-purpose switching and amplification
  • Space-restricted applications due to compact package size

Applications

The BC807-40QBZ transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits
  • Medium-power electronic circuits
  • Automotive and industrial electronics
  • Consumer electronics and mobile devices
  • Power and computing applications where high current and power dissipation are required

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807-40QBZ transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BC807-40QBZ transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the total power dissipation (Ptot) of the BC807-40QBZ transistor?

    The total power dissipation (Ptot) is 350 mW.

  4. What is the minimum and maximum current gain (hFE) of the BC807-40QBZ transistor?

    The minimum current gain (hFE) is 250, and the maximum is 600.

  5. What is the maximum junction temperature (TJ) of the BC807-40QBZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the minimum transition frequency (fT) of the BC807-40QBZ transistor?

    The minimum transition frequency (fT) is 80 MHz.

  7. Is the BC807-40QBZ transistor RoHS compliant?

    Yes, the BC807-40QBZ transistor is RoHS compliant.

  8. What package type is used for the BC807-40QBZ transistor?

    The BC807-40QBZ transistor is packaged in a DFN1110D-3 (SOT8015-3) surface mount package.

  9. What are some common applications for the BC807-40QBZ transistor?

    Common applications include general-purpose switching and amplification, medium-power electronic circuits, automotive and industrial electronics, and consumer electronics.

  10. Is the BC807-40QBZ suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, the BC807-40QBZ is suitable for AOI of solder joints due to its wettable flank design.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.27
1,715

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S200T2S
DD15S200T2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S000
DD44S32S000
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC807-40QBZ BC807-40QCZ BC807-40QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - - PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 40 @ 500mA, 1V
Power - Max 350 mW 380 mW 900 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3

Related Product By Categories

PHN203,518
PHN203,518
NXP Semiconductors
NEXPERIA PHN203 - SMALL SIGNAL F
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
MMBT2907ALT1G
MMBT2907ALT1G
onsemi
TRANS PNP 60V 0.6A SOT23-3
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP53TX
BCP53TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
BAS16J,135
BAS16J,135
Nexperia USA Inc.
DIODE GP 100V 250MA SOD323F
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74LVC00AD-Q100J
74LVC00AD-Q100J
Nexperia USA Inc.
IC GATE NAND 4CH 2-INP 14SO
74HC2GU04GW-Q100H
74HC2GU04GW-Q100H
Nexperia USA Inc.
IC INVERTER 2CH 2-INP 6TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74LVC138APW,112
74LVC138APW,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16TSSOP