BC807-40QBZ
  • Share:

Nexperia USA Inc. BC807-40QBZ

Manufacturer No:
BC807-40QBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QBZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for medium-power circuit applications and is known for its high power dissipation capability and high current handling. It is packaged in a DFN1110D-3 (SOT8015-3) surface mount package, which features a wettable flank for improved solder joint inspection.

Key Specifications

Parameter Value
Package DFN1110D-3 (SOT8015-3)
Polarity PNP
VCEO [max] -45 V
IC [max] -500 mA
Ptot 350 mW
hFE [min] 250
hFE [max] 600
TJ [max] 150°C
fT [min] 80 MHz
RoHS Compliance Yes

Key Features

  • High power dissipation capability
  • High current handling up to 500 mA
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joints
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.48 mm
  • General-purpose switching and amplification
  • Space-restricted applications due to compact package size

Applications

The BC807-40QBZ transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits
  • Medium-power electronic circuits
  • Automotive and industrial electronics
  • Consumer electronics and mobile devices
  • Power and computing applications where high current and power dissipation are required

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC807-40QBZ transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the maximum collector current (IC) of the BC807-40QBZ transistor?

    The maximum collector current (IC) is -500 mA.

  3. What is the total power dissipation (Ptot) of the BC807-40QBZ transistor?

    The total power dissipation (Ptot) is 350 mW.

  4. What is the minimum and maximum current gain (hFE) of the BC807-40QBZ transistor?

    The minimum current gain (hFE) is 250, and the maximum is 600.

  5. What is the maximum junction temperature (TJ) of the BC807-40QBZ transistor?

    The maximum junction temperature (TJ) is 150°C.

  6. What is the minimum transition frequency (fT) of the BC807-40QBZ transistor?

    The minimum transition frequency (fT) is 80 MHz.

  7. Is the BC807-40QBZ transistor RoHS compliant?

    Yes, the BC807-40QBZ transistor is RoHS compliant.

  8. What package type is used for the BC807-40QBZ transistor?

    The BC807-40QBZ transistor is packaged in a DFN1110D-3 (SOT8015-3) surface mount package.

  9. What are some common applications for the BC807-40QBZ transistor?

    Common applications include general-purpose switching and amplification, medium-power electronic circuits, automotive and industrial electronics, and consumer electronics.

  10. Is the BC807-40QBZ suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, the BC807-40QBZ is suitable for AOI of solder joints due to its wettable flank design.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.27
1,715

Please send RFQ , we will respond immediately.

Same Series
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2000X/AA
DD26S2000X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC807-40QBZ BC807-40QCZ BC807-40QAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - - PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V 40 @ 500mA, 1V
Power - Max 350 mW 380 mW 900 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1010D-3

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
PMEG6010ELR-QX
PMEG6010ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS316/DG/B3,135
BAS316/DG/B3,135
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA TO236
BZX384-C3V3,115
BZX384-C3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BZX84-B10/DG/B3215
BZX84-B10/DG/B3215
Nexperia USA Inc.
DIODE ZENER
BCX51-16,115
BCX51-16,115
Nexperia USA Inc.
TRANS PNP 45V 1A SOT89
BC807-16HR
BC807-16HR
Nexperia USA Inc.
BC807-16H/SOT23/TO-236AB
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74HC3G14DP,125
74HC3G14DP,125
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC