BC807-40QAZ
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Nexperia USA Inc. BC807-40QAZ

Manufacturer No:
BC807-40QAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1010D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QAZ is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed for a wide range of applications, including automotive, industrial, and consumer electronics. It features a high collector current and low saturation voltage, making it suitable for various switching and amplification tasks.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (Vceo) 45 V
Collector Current (Ic) 500 mA
DC Current Gain (hFE) Min 250 - at 100 mA, 1 V
DC Current Gain (hFE) Max 600 - at 100 mA, 1 V
Saturation Voltage (Vce(sat)) 700 mV - at 50 mA, 500 mA
Transition Frequency (fT) 80 MHz
Power Dissipation (Ptot) 300 mW
Junction Temperature (Tj) 150 °C
Package Type DFN1010D-3 (SOT1215) -
Mounting Type Surface Mount -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -
Lead Free Status / RoHS Status Lead free / RoHS Compliant -

Key Features

  • High Collector Current: Up to 500 mA, making it suitable for a variety of applications.
  • Low Saturation Voltage: Vce(sat) of 700 mV at 50 mA and 500 mA, reducing power losses.
  • High Transition Frequency: 80 MHz, enabling high-speed switching and amplification.
  • Compact Package: DFN1010D-3 (SOT1215) package, ideal for space-constrained designs.
  • AEC-Q101 Qualified: Suitable for automotive applications, ensuring reliability and performance under harsh conditions.
  • Lead-Free and RoHS Compliant: Environmentally friendly and compliant with global regulations.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control: Used in industrial control systems for switching and amplification tasks.
  • Consumer Electronics: Found in consumer electronics such as audio amplifiers, power supplies, and other general-purpose circuits.
  • Power Management: Used in power management circuits to control and regulate power flow.
  • Communication Devices: Used in communication devices for amplification and switching functions.

Q & A

  1. What is the collector-emitter breakdown voltage of the BC807-40QAZ transistor?

    The collector-emitter breakdown voltage (Vceo) is 45 V.

  2. What is the maximum collector current of the BC807-40QAZ transistor?

    The maximum collector current (Ic) is 500 mA.

  3. What is the minimum DC current gain (hFE) of the BC807-40QAZ transistor?

    The minimum DC current gain (hFE) is 250 at 100 mA and 1 V.

  4. What is the saturation voltage (Vce(sat)) of the BC807-40QAZ transistor?

    The saturation voltage (Vce(sat)) is 700 mV at 50 mA and 500 mA.

  5. What is the transition frequency (fT) of the BC807-40QAZ transistor?

    The transition frequency (fT) is 80 MHz.

  6. What is the power dissipation (Ptot) of the BC807-40QAZ transistor?

    The power dissipation (Ptot) is 300 mW.

  7. What is the junction temperature (Tj) of the BC807-40QAZ transistor?

    The junction temperature (Tj) is 150 °C.

  8. What package type does the BC807-40QAZ transistor use?

    The package type is DFN1010D-3 (SOT1215).

  9. Is the BC807-40QAZ transistor AEC-Q101 qualified?

    Yes, the BC807-40QAZ transistor is AEC-Q101 qualified, making it suitable for automotive applications.

  10. Is the BC807-40QAZ transistor lead-free and RoHS compliant?

    Yes, the BC807-40QAZ transistor is lead-free and RoHS compliant.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 500mA, 1V
Power - Max:900 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Same Series
BC807-25QAZ
BC807-25QAZ
NEXPERIA BC807-25QA - 45 V, 500

Similar Products

Part Number BC807-40QAZ BC807-40QBZ BC807-40QCZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP - -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA, 1V 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 900 mW 350 mW 380 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1010D-3 DFN1110D-3 DFN1412D-3

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