BC807-40QCZ
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Nexperia USA Inc. BC807-40QCZ

Manufacturer No:
BC807-40QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QCZ is a PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for general-purpose amplifier and switching applications. It is part of the BC807-Q series, which is known for its high current and power handling capabilities. The BC807-40QCZ is particularly suited for use in automotive and industrial environments due to its robust specifications and compliance with automotive standards such as AEC-Q101.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (VCEO) 45 V
Collector Current (IC) 500 mA
Collector Cutoff Current (ICES) 100 μA
Collector-Emitter Saturation Voltage (VCE(sat)) 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) 250 (min) @ 100 mA, 1 V
Transition Frequency (fT) 80 MHz
Package Type DFN1412D-3 (SOT8009)
Package Size 1.4 x 1.2 x 0.48 mm
Operating Temperature Range -55°C to 150°C
RoHS Compliance Yes

Key Features

  • High Current and Power Handling: The BC807-40QCZ can handle up to 500 mA of collector current and has a high power dissipation capability, making it suitable for demanding applications.
  • Compact Package: The transistor is housed in a small DFN1412D-3 (SOT8009) package, which has a low profile of 0.48 mm, ideal for space-restricted designs.
  • Automotive Qualified: Compliant with AEC-Q101, this transistor is recommended for use in automotive applications, ensuring reliability and performance under harsh conditions.
  • Good Frequency Response: With a transition frequency of 80 MHz, the BC807-40QCZ offers good frequency response, making it suitable for a variety of amplifier and switching applications.
  • RoHS Compliance: The transistor is RoHS compliant, ensuring it meets environmental standards for lead-free manufacturing.

Applications

  • General-Purpose Amplifier Circuits: Suitable for use in various amplifier configurations due to its high current gain and good frequency response.
  • Switching Circuits: Ideal for switching applications where high current and low saturation voltage are required.
  • Automotive Electronics: Qualified for use in automotive systems, including control modules, sensors, and actuators.
  • Industrial Control Systems: Used in industrial automation, motor control, and other high-reliability applications.

Q & A

  1. What is the maximum collector current of the BC807-40QCZ?

    The maximum collector current is 500 mA.

  2. What is the collector-emitter breakdown voltage of the BC807-40QCZ?

    The collector-emitter breakdown voltage is 45 V.

  3. What package type is the BC807-40QCZ available in?

    The transistor is available in a DFN1412D-3 (SOT8009) package.

  4. Is the BC807-40QCZ automotive qualified?

    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.

  5. What is the operating temperature range of the BC807-40QCZ?

    The operating temperature range is -55°C to 150°C.

  6. Is the BC807-40QCZ RoHS compliant?

    Yes, it is RoHS compliant.

  7. What is the transition frequency of the BC807-40QCZ?

    The transition frequency is 80 MHz.

  8. What are some common applications of the BC807-40QCZ?

    It is commonly used in general-purpose amplifier circuits, switching circuits, automotive electronics, and industrial control systems.

  9. What is the collector-emitter saturation voltage of the BC807-40QCZ?

    The collector-emitter saturation voltage is 700 mV at 50 mA and 500 mA.

  10. What is the DC current gain (hFE) of the BC807-40QCZ?

    The DC current gain (hFE) is 250 (min) at 100 mA and 1 V.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC807-40QCZ BC807-40QAZ BC807-40QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 40 @ 500mA, 1V 250 @ 100mA, 1V
Power - Max 380 mW 900 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1010D-3 DFN1110D-3

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