BC807-40QCZ
  • Share:

Nexperia USA Inc. BC807-40QCZ

Manufacturer No:
BC807-40QCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.5A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40QCZ is a PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for general-purpose amplifier and switching applications. It is part of the BC807-Q series, which is known for its high current and power handling capabilities. The BC807-40QCZ is particularly suited for use in automotive and industrial environments due to its robust specifications and compliance with automotive standards such as AEC-Q101.

Key Specifications

Parameter Value Unit
Collector-Emitter Breakdown Voltage (VCEO) 45 V
Collector Current (IC) 500 mA
Collector Cutoff Current (ICES) 100 μA
Collector-Emitter Saturation Voltage (VCE(sat)) 700 mV @ 50 mA, 500 mA
DC Current Gain (hFE) 250 (min) @ 100 mA, 1 V
Transition Frequency (fT) 80 MHz
Package Type DFN1412D-3 (SOT8009)
Package Size 1.4 x 1.2 x 0.48 mm
Operating Temperature Range -55°C to 150°C
RoHS Compliance Yes

Key Features

  • High Current and Power Handling: The BC807-40QCZ can handle up to 500 mA of collector current and has a high power dissipation capability, making it suitable for demanding applications.
  • Compact Package: The transistor is housed in a small DFN1412D-3 (SOT8009) package, which has a low profile of 0.48 mm, ideal for space-restricted designs.
  • Automotive Qualified: Compliant with AEC-Q101, this transistor is recommended for use in automotive applications, ensuring reliability and performance under harsh conditions.
  • Good Frequency Response: With a transition frequency of 80 MHz, the BC807-40QCZ offers good frequency response, making it suitable for a variety of amplifier and switching applications.
  • RoHS Compliance: The transistor is RoHS compliant, ensuring it meets environmental standards for lead-free manufacturing.

Applications

  • General-Purpose Amplifier Circuits: Suitable for use in various amplifier configurations due to its high current gain and good frequency response.
  • Switching Circuits: Ideal for switching applications where high current and low saturation voltage are required.
  • Automotive Electronics: Qualified for use in automotive systems, including control modules, sensors, and actuators.
  • Industrial Control Systems: Used in industrial automation, motor control, and other high-reliability applications.

Q & A

  1. What is the maximum collector current of the BC807-40QCZ?

    The maximum collector current is 500 mA.

  2. What is the collector-emitter breakdown voltage of the BC807-40QCZ?

    The collector-emitter breakdown voltage is 45 V.

  3. What package type is the BC807-40QCZ available in?

    The transistor is available in a DFN1412D-3 (SOT8009) package.

  4. Is the BC807-40QCZ automotive qualified?

    Yes, it is qualified according to AEC-Q101 and recommended for use in automotive applications.

  5. What is the operating temperature range of the BC807-40QCZ?

    The operating temperature range is -55°C to 150°C.

  6. Is the BC807-40QCZ RoHS compliant?

    Yes, it is RoHS compliant.

  7. What is the transition frequency of the BC807-40QCZ?

    The transition frequency is 80 MHz.

  8. What are some common applications of the BC807-40QCZ?

    It is commonly used in general-purpose amplifier circuits, switching circuits, automotive electronics, and industrial control systems.

  9. What is the collector-emitter saturation voltage of the BC807-40QCZ?

    The collector-emitter saturation voltage is 700 mV at 50 mA and 500 mA.

  10. What is the DC current gain (hFE) of the BC807-40QCZ?

    The DC current gain (hFE) is 250 (min) at 100 mA and 1 V.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:380 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
0 Remaining View Similar

In Stock

$0.28
897

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC807-40QCZ BC807-40QAZ BC807-40QBZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type - PNP -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 40 @ 500mA, 1V 250 @ 100mA, 1V
Power - Max 380 mW 900 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1010D-3 DFN1110D-3

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC846B/DG/B4R
BC846B/DG/B4R
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
PESD2CANFD24V-TR
PESD2CANFD24V-TR
Nexperia USA Inc.
TVS DIODE 24VWM 42VC TO236AB
BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
BC846AW,135
BC846AW,135
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
PBSS8110TVL
PBSS8110TVL
Nexperia USA Inc.
PBSS8110T/SOT23/TO-236AB
PDTD123YT/APGR
PDTD123YT/APGR
Nexperia USA Inc.
PDTD123YT/APGR
2N7002P,235
2N7002P,235
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
74HC4851D-Q100,118
74HC4851D-Q100,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16SOIC
HEF4047BT,652
HEF4047BT,652
Nexperia USA Inc.
IC MULTIVIBRATOR 50NS 14SO
74HC164D,653
74HC164D,653
Nexperia USA Inc.
IC SHIFT REGST 8BIT SI-PO 14SOIC
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP