BC807-25QB-QZ
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Nexperia USA Inc. BC807-25QB-QZ

Manufacturer No:
BC807-25QB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The Nexperia BC807-25QB-QZ is a PNP general-purpose transistor designed for a wide range of applications. It is part of Nexperia's extensive portfolio of bipolar transistors, known for their reliability and performance. This transistor is housed in a compact DFN1110D-3 package, making it ideal for small-footprint applications. With its automotive qualification, it is suitable for use in various industries, including automotive, industrial, and consumer electronics.

Key Specifications

ParameterValue
BrandNexperia
Transistor TypePNP
Maximum DC Collector Current-500 mA
Maximum Collector Emitter Voltage-45 V
Package TypeDFN1110D-3
Mounting TypeSurface Mount
Minimum DC Current Gain (hFE)160
Power Dissipation (Pd)460 mW
Maximum Operating Temperature (T J [max])+150 °C
Emitter-Base Voltage (VEBO)5 V
Transition Frequency (fT [min])80 MHz

Key Features

  • Compact DFN1110D-3 package suitable for small-footprint applications.
  • Automotive qualified, ensuring reliability in demanding environments.
  • High current handling with a maximum DC collector current of -500 mA.
  • High voltage capability with a maximum collector-emitter voltage of -45 V.
  • Minimum DC current gain of 160, ensuring consistent performance.
  • High transition frequency of 80 MHz, suitable for high-frequency applications.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The Nexperia BC807-25QB-QZ transistor is versatile and can be used in a variety of applications across different industries. These include:

  • Automotive systems: For use in vehicle electronics due to its automotive qualification.
  • Industrial control systems: Suitable for high-reliability applications in industrial settings.
  • Consumer electronics: Used in various consumer devices requiring high-performance and compact design.
  • Power management: Can be used in power management circuits due to its high current and voltage handling capabilities.

Q & A

  1. What is the maximum DC collector current of the BC807-25QB-QZ transistor?
    The maximum DC collector current is -500 mA.
  2. What is the maximum collector-emitter voltage of the BC807-25QB-QZ transistor?
    The maximum collector-emitter voltage is -45 V.
  3. What package type is used for the BC807-25QB-QZ transistor?
    The transistor is housed in a DFN1110D-3 package.
  4. Is the BC807-25QB-QZ transistor automotive qualified?
    Yes, it is automotive qualified.
  5. What is the minimum DC current gain (hFE) of the BC807-25QB-QZ transistor?
    The minimum DC current gain is 160.
  6. What is the maximum operating temperature of the BC807-25QB-QZ transistor?
    The maximum operating temperature is +150 °C.
  7. What is the emitter-base voltage (VEBO) of the BC807-25QB-QZ transistor?
    The emitter-base voltage is 5 V.
  8. What is the transition frequency (fT [min]) of the BC807-25QB-QZ transistor?
    The transition frequency is 80 MHz.
  9. What type of mounting is used for the BC807-25QB-QZ transistor?
    The transistor uses surface mount technology.
  10. What are some common applications of the BC807-25QB-QZ transistor?
    Common applications include automotive systems, industrial control systems, consumer electronics, and power management circuits.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:350 mW
Frequency - Transition:80MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC807-25QB-QZ BC807-25QC-QZ BC807-25QBH-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 350 mW 380 mW 420 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

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