BC807-25QBH-QZ
  • Share:

Nexperia USA Inc. BC807-25QBH-QZ

Manufacturer No:
BC807-25QBH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25QBH-QZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for high reliability and is qualified according to the AEC-Q101 standard, making it suitable for automotive and other demanding applications. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Type Number BC807-25QBH-QZ -
Package SOT23 (TO-236AB) -
Polarity PNP -
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Maximum DC Collector Current (IC) 500 mA
Power Dissipation (Pd) 200 mW
Current Gain (hFE) 160 - 400 -
Gain Bandwidth Product (fT) 100 MHz
Minimum Operating Temperature -65 °C
Maximum Operating Temperature 150 °C
Automotive Qualified Yes (AEC-Q101) -

Key Features

  • High Current Capability: The BC807-25QBH-QZ can handle up to 500 mA of collector current, making it suitable for a variety of applications requiring moderate to high current levels.
  • High Voltage Handling: With a collector-emitter voltage rating of 45 V, this transistor is capable of handling high voltage applications.
  • Automotive Qualified: Qualified according to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding environments.
  • Compact Package: The SOT23 package is small and surface-mountable, ideal for space-constrained designs.
  • Three Current Gain Selections: Available with different current gain (hFE) selections, providing flexibility in design choices.
  • General-Purpose Switching and Amplification: Suitable for both switching and amplification applications due to its balanced performance characteristics.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, this transistor is particularly suited for use in automotive systems, including power management, sensor interfaces, and control circuits.
  • Industrial Control Systems: Its high reliability and robustness make it a good choice for industrial control systems, such as motor control, power supplies, and signal processing.
  • Consumer Electronics: Suitable for use in consumer electronics where high current and voltage handling are required, such as in audio amplifiers, power supplies, and other general-purpose applications.
  • Power Management: Can be used in power management circuits, including voltage regulators, DC-DC converters, and power switches.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-25QBH-QZ transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum DC collector current of the BC807-25QBH-QZ transistor?

    The maximum DC collector current (IC) is 500 mA.

  3. Is the BC807-25QBH-QZ transistor automotive qualified?

    Yes, it is qualified according to the AEC-Q101 standard.

  4. What is the package type of the BC807-25QBH-QZ transistor?

    The transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. What are the operating temperature ranges for the BC807-25QBH-QZ transistor?

    The operating temperature range is from -65°C to 150°C.

  6. What are the typical applications of the BC807-25QBH-QZ transistor?

    Typical applications include automotive systems, industrial control systems, consumer electronics, and power management circuits.

  7. What is the gain bandwidth product (fT) of the BC807-25QBH-QZ transistor?

    The gain bandwidth product (fT) is 100 MHz.

  8. What is the power dissipation (Pd) of the BC807-25QBH-QZ transistor?

    The power dissipation (Pd) is 200 mW.

  9. What are the current gain (hFE) ranges for the BC807-25QBH-QZ transistor?

    The current gain (hFE) ranges from 160 to 400.

  10. How can I obtain samples of the BC807-25QBH-QZ transistor?

    Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:420 mW
Frequency - Transition:80MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.33
2,156

Please send RFQ , we will respond immediately.

Same Series
DD26M20JV5Z
DD26M20JV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000
DD26S2F000
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V30
DD44S32S60V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC807-25QBH-QZ BC807-25QCH-QZ BC807-25QB-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 420 mW 455 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 175°C (TJ) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

Related Product By Categories

BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG10020ELR-QX
PMEG10020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
BC807RAZ
BC807RAZ
Nexperia USA Inc.
BC807RA/SOT1268/DFN1412-6
BC847BPN/DG/B2,115
BC847BPN/DG/B2,115
Nexperia USA Inc.
TRANS GEN PURPOSE SC-88
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
NX138BKVL
NX138BKVL
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74VHC245PW,118
74VHC245PW,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
BC807K-25,235
BC807K-25,235
Nexperia USA Inc.
BC807K-25 - 45 V, 500 MA PNP GEN