BC807-25QBH-QZ
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Nexperia USA Inc. BC807-25QBH-QZ

Manufacturer No:
BC807-25QBH-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25QBH-QZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for high reliability and is qualified according to the AEC-Q101 standard, making it suitable for automotive and other demanding applications. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.

Key Specifications

Parameter Value Unit
Type Number BC807-25QBH-QZ -
Package SOT23 (TO-236AB) -
Polarity PNP -
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Maximum DC Collector Current (IC) 500 mA
Power Dissipation (Pd) 200 mW
Current Gain (hFE) 160 - 400 -
Gain Bandwidth Product (fT) 100 MHz
Minimum Operating Temperature -65 °C
Maximum Operating Temperature 150 °C
Automotive Qualified Yes (AEC-Q101) -

Key Features

  • High Current Capability: The BC807-25QBH-QZ can handle up to 500 mA of collector current, making it suitable for a variety of applications requiring moderate to high current levels.
  • High Voltage Handling: With a collector-emitter voltage rating of 45 V, this transistor is capable of handling high voltage applications.
  • Automotive Qualified: Qualified according to the AEC-Q101 standard, ensuring reliability and performance in automotive and other demanding environments.
  • Compact Package: The SOT23 package is small and surface-mountable, ideal for space-constrained designs.
  • Three Current Gain Selections: Available with different current gain (hFE) selections, providing flexibility in design choices.
  • General-Purpose Switching and Amplification: Suitable for both switching and amplification applications due to its balanced performance characteristics.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, this transistor is particularly suited for use in automotive systems, including power management, sensor interfaces, and control circuits.
  • Industrial Control Systems: Its high reliability and robustness make it a good choice for industrial control systems, such as motor control, power supplies, and signal processing.
  • Consumer Electronics: Suitable for use in consumer electronics where high current and voltage handling are required, such as in audio amplifiers, power supplies, and other general-purpose applications.
  • Power Management: Can be used in power management circuits, including voltage regulators, DC-DC converters, and power switches.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-25QBH-QZ transistor?

    The maximum collector-emitter voltage (VCEO) is 45 V.

  2. What is the maximum DC collector current of the BC807-25QBH-QZ transistor?

    The maximum DC collector current (IC) is 500 mA.

  3. Is the BC807-25QBH-QZ transistor automotive qualified?

    Yes, it is qualified according to the AEC-Q101 standard.

  4. What is the package type of the BC807-25QBH-QZ transistor?

    The transistor is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  5. What are the operating temperature ranges for the BC807-25QBH-QZ transistor?

    The operating temperature range is from -65°C to 150°C.

  6. What are the typical applications of the BC807-25QBH-QZ transistor?

    Typical applications include automotive systems, industrial control systems, consumer electronics, and power management circuits.

  7. What is the gain bandwidth product (fT) of the BC807-25QBH-QZ transistor?

    The gain bandwidth product (fT) is 100 MHz.

  8. What is the power dissipation (Pd) of the BC807-25QBH-QZ transistor?

    The power dissipation (Pd) is 200 mW.

  9. What are the current gain (hFE) ranges for the BC807-25QBH-QZ transistor?

    The current gain (hFE) ranges from 160 to 400.

  10. How can I obtain samples of the BC807-25QBH-QZ transistor?

    Samples can be obtained through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:420 mW
Frequency - Transition:80MHz
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC807-25QBH-QZ BC807-25QCH-QZ BC807-25QB-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 420 mW 455 mW 350 mW
Frequency - Transition 80MHz 80MHz 80MHz
Operating Temperature 175°C (TJ) 175°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

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