S8050-C-BP
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Micro Commercial Co S8050-C-BP

Manufacturer No:
S8050-C-BP
Manufacturer:
Micro Commercial Co
Package:
Bulk
Description:
TRANS NPN 25V 0.5A TO92
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The S8050-C-BP is a general-purpose NPN bipolar junction transistor (BJT) produced by Micro Commercial Components (MCC). This transistor is designed for low-voltage, high-current applications and is widely used in various electronic circuits due to its versatility and reliability. The S8050-C-BP operates using electrons as the major charge carriers and is suitable for applications requiring high current gain and low saturation voltage.

It features a maximum collector current of 1.5A and a collector-emitter voltage (Vce) of 25V, making it ideal for use in power supply circuits, motor control, and other high-current switching applications. The transistor is also RoHS compliant, ensuring it meets environmental standards for electronic components.

Key Specifications

Parameter Value
Type NPN Bipolar Transistor
Package TO-92, TO-226-3 (TO-226AA)
Collector-Base Voltage (Vcbo) 40V
Collector-Emitter Voltage (Vceo) 25V
Emitter-Base Voltage (Vebo) 6V
Collector Current (Ic) 1.5A (max)
Power Dissipation 1 Watt (max)
DC Current Gain (hFE) 120 (min) @ 100mA, 1V
Base-Emitter Saturation Voltage (Vbe(sat)) 1.2V
Operating Temperature -55°C ~ 150°C (TJ)
Frequency - Transition 190MHz

Key Features

  • Low Voltage, High Current: Designed to operate at low voltages while handling high currents.
  • High Current Gain: Maximum DC current gain (hFE) of up to 400, making it suitable for amplification and switching applications.
  • Small Signal Transistor: Capable of amplifying small signals, making it suitable for audio amplifiers and signal processing circuits.
  • Push-Pull Configuration: Often used in push-pull configurations for Class B amplifiers to minimize distortion and power consumption.
  • Rugged Construction: Available in TO-92 and other packages, ensuring durability and ease of use in various applications.
  • RoHS Compliant: Meets environmental standards for electronic components.

Applications

  • Audio Amplification Circuits: Used in audio amplifiers due to its small signal amplification characteristics.
  • Class B Amplifiers: Ideal for push-pull configurations in Class B amplifiers.
  • Switching Circuits: Can be used as a switch to control loads under 700mA, such as relays, LEDs, and bulbs.
  • Signal Processing: Suitable for signal processing circuits where high gain is required.
  • Power Supply Circuits and Motor Control: Used in applications requiring high current switching.

Q & A

  1. What type of transistor is the S8050-C-BP?

    The S8050-C-BP is an NPN bipolar junction transistor (BJT).

  2. What is the maximum collector current of the S8050-C-BP?

    The maximum collector current is 1.5A.

  3. What is the collector-emitter voltage (Vce) of the S8050-C-BP?

    The collector-emitter voltage (Vce) is 25V.

  4. What is the operating temperature range of the S8050-C-BP?

    The operating temperature range is -55°C to 150°C (TJ).

  5. Is the S8050-C-BP RoHS compliant?

    Yes, the S8050-C-BP is RoHS compliant.

  6. What are some common applications of the S8050-C-BP?

    Common applications include audio amplification circuits, Class B amplifiers, switching circuits, and signal processing.

  7. What is the maximum power dissipation of the S8050-C-BP?

    The maximum power dissipation is 1 Watt.

  8. What is the DC current gain (hFE) of the S8050-C-BP?

    The DC current gain (hFE) is typically 120 (min) @ 100mA, 1V.

  9. What is the frequency transition of the S8050-C-BP?

    The frequency transition is 190MHz.

  10. What package types are available for the S8050-C-BP?

    The transistor is available in TO-92 and TO-226-3 (TO-226AA) packages.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 50mA, 1V
Power - Max:625 mW
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92
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Similar Products

Part Number S8050-C-BP S8550-C-BP S8050-D-BP S8050-C-AP
Manufacturer Micro Commercial Co Micro Commercial Co Micro Commercial Co Micro Commercial Co
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 200nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 1V 120 @ 50mA, 1V 160 @ 50mA, 1V 120 @ 50mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 TO-92 TO-92 TO-92

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