Overview
The 2N7002KWHE3-TP is an N-Channel Enhancement Mode Field Effect Transistor (MOSFET) produced by Micro Commercial Components (MCC). This device is designed for small signal applications and is known for its low on-resistance, low gate threshold voltage, and fast switching speed. The 2N7002KWHE3-TP is packaged in a compact SOT-323 package, making it suitable for space-constrained designs. It is also RoHS compliant and features high ESD protection, making it a reliable choice for various electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current at 25°C | ID | 340 mA | mA |
| Pulsed Drain Current | IDM | 1.2 A | A |
| On-Resistance at VGS = 10V, ID = 300mA | RDS(ON) | 2.5 Ω | Ω |
| Gate Threshold Voltage | VGS(th) | 1.1 - 2.5 V | V |
| Input Capacitance at VDS = 10V | Ciss | 40 pF | pF |
| Operating Junction Temperature Range | TJ | -55 to +150 °C | °C |
| Package Type | SOT-323 | ||
| ESD Protection | ESD HBM = 1000 V, ESD CDM = 1500 V |
Key Features
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface mount package (SOT-323)
- Pb-free and RoHS compliant
- High ESD protection (ESD HBM = 1000 V, ESD CDM = 1500 V)
Applications
The 2N7002KWHE3-TP is suitable for a variety of small signal applications, including:
- Switching circuits
- Amplifier circuits
- Logic circuits
- Automotive electronics (AEC-Q101 qualified)
- Power management systems
- DC-DC converters
- Battery management systems
Q & A
- What is the maximum drain-source voltage of the 2N7002KWHE3-TP?
The maximum drain-source voltage (VDS) is 60 V.
- What is the gate threshold voltage range of the 2N7002KWHE3-TP?
The gate threshold voltage (VGS(th)) ranges from 1.1 V to 2.5 V.
- What is the continuous drain current at 25°C for the 2N7002KWHE3-TP?
The continuous drain current (ID) at 25°C is 340 mA.
- What is the on-resistance of the 2N7002KWHE3-TP at VGS = 10V and ID = 300mA?
The on-resistance (RDS(ON)) at VGS = 10V and ID = 300mA is 2.5 Ω.
- What is the input capacitance of the 2N7002KWHE3-TP at VDS = 10V?
The input capacitance (Ciss) at VDS = 10V is 40 pF.
- Is the 2N7002KWHE3-TP RoHS compliant?
- What is the operating junction temperature range of the 2N7002KWHE3-TP?
The operating junction temperature range (TJ) is -55°C to +150°C.
- What package type is the 2N7002KWHE3-TP available in?
The 2N7002KWHE3-TP is available in the SOT-323 package.
- What is the ESD protection level of the 2N7002KWHE3-TP?
The ESD protection level is ESD HBM = 1000 V and ESD CDM = 1500 V.
- Is the 2N7002KWHE3-TP suitable for automotive applications?
